High temperature atomic layer deposition of silicon oxide thin films

1. A process to deposit a silicon oxide film onto a substrate, comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one silicon precursor;

c. purging the reactor with purge gas;

d. introducing an oxygen source into the reactor; and

e. purging the reactor with purge gas; and

wherein steps b through e are repeated until a desired thickness of silicon oxide is deposited, wherein the process in conducted at one or more temperatures ranging from over 600 to 800° C. and one or more pressures ranging from 50 milliTorr (mT) to 760 Torr, wherein the at least one silicon precursor having a formula selected from the group consisting of methoxytrimethylsilane, ethoxytrimethylsilane, iso-propoxytrimethylsilane, tert-butoxytrimethylsilane, tert-pentoxytrimethylsilane, phenoxytrimethylsilane, acetoxytrimethylsilane, methoxytriethylsilane, ethoxytriethylsilane, iso-propoxytriethylsilane, tert-butoxytriethylsilane, tert-pentoxytriethylsilane, phenoxytriethylsilane, acetoxytriethylsilane, methoxydimethylsilane, ethoxydimethylsilane, iso-propoxydimethylsilane, tert-butoxydimethylsilane, tert-pentoxydimethylsilane, phenoxydimethylsilane, acetoxydimethylsilane, methoxydimethylphenylsilane, ethoxydimethylphenylsilane, iso-propoxydimethylphenylsilane, tert-butoxydimethylphenylsilane, tert-pentoxydimethylphenylsilane, phenoxydimethylphenylsilane, acetoxydimethylphenylsilane, dimethoxydimethylsilane, diethoxydimethylsilane, di-isopropoxydimethylsilane, di-t-butoxydimethylsilane, diacytoxydimethylsilane, dimethoxydiethylsilane, diethoxydiethylsilane, di-isopropoxydiethylsilane, di-t-butoxydiethylsilane, diacytoxydiethylsilane, dimethoxydi-isopropylsilane, diethoxydi-isopropylsilane, di-isopropoxydi-isopropylsilane, di-t-butoxydi-isopropylsilane, diacytoxydi-isopropylsilane, dimethoxymethylvinylsilane, diethoxymethylvinylsilane, di-isopropoxymethylvinylsilane, di-t-butoxymethylvinylsilane, diacytoxymethylvinylsilane, 1,1,3,4-tetramethyl-1-sila-2,5-dioxacyclopentane, 1,1,3,3,4,4-hexamethyl-1-sila-2,5-dioxacyclopentane, and mixtures thereof.

2. The process of claim 1 , wherein the purge gas is selected from the group consisting of nitrogen, helium and argon.

3. The process of claim 1 , wherein the oxygen source is selected from the group consisting of oxygen, peroxide, oxygen plasma, water vapor, water vapor plasma, hydrogen peroxide, and ozone source.

4. The process of claim 1 , further comprises steps f and g after step e:

f. introducing water vapor or hydroxyl source into the reactor; and

g. purging reactor with purge gas.

5. A process to deposit a silicon oxide film onto a substrate, comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one silicon precursor;

c. purging the reactor with purge gas;

d. introducing an oxygen source into the reactor; and

e. purging the reactor with purge gas; and

wherein steps b through e are repeated until a desired thickness of silicon oxide is deposited, wherein the process in conducted at one or more temperatures ranging from over 600 to 800° C. and one or more pressures ranging from 50 milliTorr (mT) to 760 Torr, wherein the at least one silicon precursor having a formula selected from the group consisting of 1,1,1,3,3,3-hexamethyldisilazane, 1,1,1,3,3,3-hexaethyldisilazane, 1,1,3,3-tetramethyldisilazane, 1,1,3,3-tetraethyldisilazane, 1,1,1,2,3,3,3-heptamethyldisilazane, 1,1,1,3,3,3-hexaethyl-2-methyldisilazane, 1,1,2,3,3-pentamethyldisilazane, 1,1,3,3-tetraethyl-2-methyldisilazane, 1,1,1,3,3,3-hexamethyl-2-ethyldisilazane, 1,1,1,2,3,3,3-heptaethyldisilazane, 1,1,3,3-tetramethyl-2-ethyldisilazane, 1,1,2,3,3-pentaethyldisilazane, 1,1,1,3,3,3-hexamethyl-2-isopropyldisilazane, 1, 1,1,3,3,3-hexaethyl-2-isopropyldisilazane, 1,1,3,3-tetramethyl-2-isopropyldisilazane, 1,1,3,3-tetraethyl-2-isopropyldisilazane, and mixtures thereof.

6. The process of claim 5 , wherein the oxygen source is selected from the group consisting of oxygen, peroxide, oxygen plasma, nitrous oxide, water vapor, water vapor plasma, hydrogen peroxide, and ozone source.

7. The process of claim 5 , wherein the process temperature ranges from 500° C. to 750° C.

8. The process of claim 5 , wherein the process temperature ranges from 600° C. to 750° C.

9. The process of claim 5 , wherein the pressure ranges from 50 milliTorr (mT) to 100 Torr.

10. The process of claim 5 , further comprises steps f and g after step e:

f. introducing water vapor or hydroxyl source into the reactor; and

g. purging reactor with purge gas.

11. A film deposited by the process of claim 1 .

12. A film deposited by the process of claim 5 .