Radiation emitting device

1. A radiation emitting device comprising:

a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, the pixelated optoelectronic semiconductor chip comprising a plurality of adjacent semiconductor regions;

a conversion element or a color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength; and

a color control element comprising a semiconductor diode configured to absorb a portion of at least one of the first radiation or the second radiation,

wherein the radiation emitting device is configured to:

emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode in a first operating state; and

emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the at least one absorbed first radiation or the absorbed second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode in a second operating state.

2. The radiation emitting device according to claim 1 , wherein the forward voltage is less than an operational voltage of the semiconductor diode.

3. The radiation emitting device according to claim 1 , further comprising a filter element for reflecting the third radiation disposed between the color control element and the conversion element or the color control medium.

4. The radiation emitting device according to claim 1 , wherein the third peak wavelength is greater than the first and second peak wavelengths.

5. The radiation emitting device according to claim 1 , wherein the conversion element or the color control medium or the color control element does not have a pixel structure corresponding to the pixelated optoelectronic semiconductor chip and is so thin that lateral radiation propagation is substantially inhibited.

6. The radiation emitting device according to claim 1 , wherein the semiconductor regions of the pixelated optoelectronic semiconductor chip are individually controllable so that the pixelated optoelectronic semiconductor chip is suitable for pixel-fine radiation emission.

7. A radiation emitting device comprising:

a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, the pixelated optoelectronic semiconductor chip comprising a plurality of semiconductor regions arranged next to one another;

a conversion element or a color control medium configured to convert at least a portion of the first radiation into a second radiation having at least a second peak wavelength; and

a color control element comprising an electrochromic element configured to change transmission of the first and second radiations,

wherein the conversion element or the color control medium or the color control element has no pixel structure corresponding to the pixelated optoelectronic semiconductor chip and is so thin that lateral radiation propagation is substantially inhibited,

wherein the radiation emitting device is configured to emit radiation of a first color temperature in a first operating state and to emit radiation of a second color temperature in a second operating state, and

wherein different voltages are applied to the color control element in the first and second operating states.

8. The radiation emitting device according to claim 7 , wherein the second peak wavelength is greater than the first peak wavelength.

9. The radiation emitting device according to claim 7 , wherein the color control element has a thickness of at most 30 μm.

10. The radiation emitting device according to claim 7 , wherein the conversion element or the color control medium is arranged on the pixelated optoelectronic semiconductor chip, and wherein the color control element is arranged on a side of the conversion element or the color control medium remote from the pixelated optoelectronic semiconductor chip.

11. The radiation emitting device according to claim 7 , wherein the color control element has radiation absorbing and radiation transmissive regions, and wherein absorption of at least one of the first radiation or the second radiation in the radiation absorbing regions is greater than in the radiation transmissive regions.

12. The radiation emitting device according to claim 11 , wherein the radiation transmissive regions are formed by recesses in the color control element.

13. The radiation emitting device according to claim 7 , wherein the radiation emitting device is configured to emit radiation with a cold white color temperature in the first operating state and radiation with a warm white color temperature in the second operating state.

14. The radiation emitting device according to claim 7 , further comprising a circuit element for driving the semiconductor regions of the pixelated optoelectronic semiconductor chip, wherein the pixelated optoelectronic semiconductor chip is arranged on the circuit element.

15. A method for operation a radiation emitting device for emitting radiation of a first color temperature in a first operating state and for emitting radiation of a second color temperature in a second operating state, wherein the radiation emitting device comprises a pixelated optoelectronic semiconductor chip for emitting a first radiation having a first peak wavelength, the pixelated optoelectronic semiconductor chip comprising a plurality of semiconductor regions arranged next to one another, a conversion element or a color control medium for converting at least a portion of the first radiation into a second radiation having at least a second peak wavelength and a color control element comprising an electrochromic element for changing transmission of the first and second radiations, wherein the conversion element or the color control medium or the color control element has no pixel structure corresponding to the pixelated optoelectronic semiconductor chip and is so thin that radiation propagation is substantially inhibited, the method comprising:

applying a first voltage to the color control element in the first operating state; and

applying a second voltage to the color control element in the second operating state, wherein the first and second voltages are different.