Display apparatus and method of manufacturing the same
A display apparatus including a first thin film transistor disposed on a substrate and including a first active layer, a second thin film transistor disposed on the first thin film transistor and including a second active layer overlapping the first thin film transistor, a first planarization layer disposed between the first thin film transistor and the second thin film transistor, the first planarization layer including a first insulating layer and a second insulating layer disposed on the first insulating layer, and a first buffer layer disposed between the first planarization layer and the second thin film transistor, in which an upper surface of the second insulating layer and an upper surface of the first insulating layer are substantially flush with each other.
1. A display apparatus comprising:
a first thin film transistor disposed on a substrate and comprising a first active layer;
a second thin film transistor disposed on the first thin film transistor and comprising a second active layer overlapping the first thin film transistor;
a first planarization layer disposed between the first thin film transistor and the second thin film transistor, the first planarization layer comprising a first insulating layer and a second insulating layer disposed on the first insulating layer; and
a first buffer layer disposed between the first planarization layer and the second thin film transistor,
wherein an upper surface of the second insulating layer and an upper surface of the first insulating layer are substantially flush with each other.
2. The display apparatus of claim 1 , wherein the first buffer layer comprises silicon oxide.
3. The display apparatus of claim 1 , further comprising a conductive layer disposed between the first thin film transistor and the first planarization layer and overlapping the second active layer.
4. The display apparatus of claim 3 , wherein the conductive layer is configured to be applied with a direct current (DC) voltage.
5. The display apparatus of claim 3 , wherein at least a light-emitting section of the conductive layer is configured to be applied with a direct current (DC) voltage.
6. The display apparatus of claim 3 , wherein a size of the conductive layer is greater than a size of a gate electrode of the second thin film transistor.
7. The display apparatus of claim 3 , wherein a center of the conductive layer is shifted from a center of a gate electrode of the second thin film transistor by a distance of less than 3 μm.
8. The display apparatus of claim 1 , wherein a thickness of the second active layer is less than a thickness of the first active layer.
9. The display apparatus of claim 1 , wherein a thickness of the second active layer is less than or equal to about 80% of a thickness of the first active layer.
10. The display apparatus of claim 1 , further comprising a display device disposed on the second thin film transistor, the display device overlapping the second thin film transistor and connected to the first thin film transistor.
11. The display apparatus of claim 10 , further comprising, between the second thin film transistor and the display device:
a second planarization layer comprising a third insulating layer and a fourth insulating layer disposed on the third insulating layer; and
a second buffer layer disposed on the second planarization layer,
wherein an upper surface of the fourth insulating layer and an upper surface of the third insulating layer are substantially flush with each other.
12. The display apparatus of claim 10 , further comprising a fifth insulating layer disposed between the second thin film transistor and the display device.
13. The display apparatus of claim 11 , wherein the second buffer layer comprises silicon nitride.
14. The display apparatus of claim 1 , further comprising a third thin film transistor comprising a third active layer extending from the first active layer.
15. The display apparatus of claim 14 , further comprising a capacitor disposed on the second thin film transistor and at least partially overlapping the second active layer.
16. A method of manufacturing a display apparatus, the method comprising:
forming a first thin film transistor on a substrate, the first thin film transistor comprising a first active layer;
forming, on the first thin film transistor, a first insulating layer and a second insulating layer;
forming a first planarization layer by etching the second insulating layer, such that an upper surface of the first insulating layer and an upper surface of the second insulating layer are substantially flush with each other;
forming a first buffer layer on the first planarization layer; and
forming a second thin film transistor on the first buffer layer, the second thin film transistor comprising a second active layer overlapping the first thin film transistor.
17. The method of claim 16 , further comprising performing thermal treatment on the first planarization layer and the first buffer layer before forming the second thin film transistor.
18. The method of claim 16 , further comprising, forming a conductive layer overlapping the first active layer on the first thin film transistor, before the forming of the first and second insulating layers,
wherein the second thin film transistor overlaps the conductive layer.
19. The method of claim 16 , further comprising forming a display device on the second thin film transistor, the display device overlapping the second thin film transistor and connected to the first thin film transistor.
20. The method of claim 19 , further comprising, before the forming of the display device:
forming, on the second thin film transistor, a third insulating layer and a fourth insulating layer;
forming a second planarization layer by etching the fourth insulating layer such that an upper surface of the third insulating layer and an upper surface of the fourth insulating layer are substantially flush with each other; and
forming a second buffer layer on the second planarization layer.