IP Library Granted Patent US 11,101,118
Granted Patent B2
US 11,101,118 · App. 16/257,872 · Granted Aug 24, 2021

Cobalt, iron, boron, and/or nickel alloy-containing articles and methods for making same

Inventors: Xingbo Yang (Phoenix, AZ); Dejan Stojakovic (Boerne, TX); Matthew J. Komertz (New Fairfield, CT); Arthur V. Testanero (New Fairfield, CT)
Assignee: Materion Corporation
H01J37/3426C23C14/3414C22C19/07H01J2237/3322
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Quick Facts
Patent No.
US 11,101,118
App. No.
16/257,872
Granted
Aug 24, 2021
Kind
B2
Abstract

Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (X=B, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

Claims (12)

1. A sputtering target comprising:

an alloy of formula (CoFe) 1-x B x , wherein 0.2≤x≤0.4;

wherein the sputtering target has a column microstructure framed by borides and a magnetic pass through flux of at least 30% at a thickness of 3 mm; and

wherein the sputtering target is substantially free of cracks.

2. The sputtering target of claim 1 , wherein the sputtering target has a purity of greater than 99.99%.

3. The sputtering target of claim 1 , wherein the sputtering target has an oxygen content less than 40 ppm.

4. The sputtering target of claim 1 , wherein the sputtering target has a diameter of up to 250 mm.

5. The sputtering target of claim 1 , wherein the alloy further comprises C or Al.

6. A sputtering target having a column microstructure framed by CoFeB intermetallics, wherein the sputtering target comprises an alloy of formula (CoFe) 1-x B x , wherein 0.2≤x≤0.4, and wherein the sputtering target has a purity of greater than 99.99% and a low oxygen content of 40 ppm or less.

7. The sputtering target of claim 6 , wherein the sputtering target has a pass through flux of at least 30% at a thickness of 3 mm.

8. The sputtering target of claim 6 , wherein the sputtering target has a diameter of up to 250 mm.

9. The sputtering target of claim 6 , wherein the alloy further comprises C or Al.

Assignments (2)
SECURITY INTEREST Recorded Sep 25, 2019
From: MATERION CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 050493/0809 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2019
From: YANG, XINGBO; KOMERTZ, MATTHEW J.; TESTANERO, ARTHUR V.; STOJAKOVIC, DEJAN
To: MATERION CORPORATION
Reel/Frame 048139/0173 →
Continuity (4)
Division 15154683 · May 13, 2016
Provisional Application 62321622 · Apr 12, 2016
Provisional Application 62161424 · May 14, 2015
Related Publication 20190157055A1 · May 23, 2019