Light-emitting device
A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
1. A light-emitting device, comprising:
a substrate;
a first light-emitting semiconductor stack on the substrate and comprising a first active layer emitting a first radiation of a first wavelength;
a second light-emitting semiconductor stack on the first light-emitting semiconductor stack and comprising a second active layer emitting a second radiation of a second wavelength;
an intermediate layer between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the intermediate layer has a first side and a second side and comprises an element having a composition ratio transiting from the first side to the second side;
a semiconductor layer between the intermediate layer and the second light-emitting semiconductor stack, and
a first electrode electrically connected to the first light-emitting semiconductor stack, and having a first pad and a first extension part extended from the first pad.
2. The light-emitting device according to claim 1 , wherein the semiconductor layer comprises Al.
3. The light-emitting device according to claim 1 , further comprising a first contact layer between the first light-emitting semiconductor stack and the first electrode.
4. The light-emitting device according to claim 1 , wherein the first light-emitting semiconductor stack has a first transverse width and the second light-emitting semiconductor stack has a second transverse width larger than the first transverse width.
5. The light-emitting device according to claim 1 , wherein the first extension part comprises an inner extension electrode and an outer extension electrode surrounding the inner extension electrode.
6. The light-emitting device according to claim 1 , wherein the first wavelength is between 620 nm and 790 nm, and the second wavelength is between 790 nm and 1500 nm.
7. The light-emitting device according to claim 1 , wherein each of the first active layer and the second active layer comprises a multi-quantum well.
8. The light-emitting device according to claim 1 , wherein the second wavelength is longer than the first wavelength.
9. A light-emitting module comprising:
a submount; and
a light-emitting device of claim 1 disposed on the submount.
10. The light-emitting device according to claim 1 , further comprising a second electrode on the substrate, wherein the second electrode is electrically connected to the first light-emitting semiconductor stack and the second light-emitting semiconductor stack.
11. The light-emitting device according to claim 10 , further comprising a second contact layer between the second light-emitting semiconductor stack and the second electrode.
12. The light-emitting device according to claim 11 , further comprising a bonding layer connecting the second contact layer to the substrate.
13. The light-emitting device according to claim 12 , wherein the bonding layer comprises a metal material.
14. The light-emitting device according to claim 1 , further comprising a third electrode electrically connected to the second light-emitting semiconductor stack, wherein the third electrode has a second pad and a second extension part extended from the second pad.
15. The light-emitting device according to claim 14 , wherein the light-emitting device has an upper surface with an edge, and the second extension part is closer to the edge than the first extension part from a top view.
16. The light-emitting device according to claim 14 , wherein the first extension part comprises a plurality of first extension electrodes.
17. The light-emitting device according to claim 16 , wherein the light-emitting device has an upper surface with an edge from a top view and each of the first extension electrodes is parallel or perpendicular to the edge from the top view.
18. The light-emitting device according to claim 14 , wherein the second extension part comprises a plurality of second extension electrodes.
19. The light-emitting device according to claim 18 , wherein the light-emitting device has an upper surface with an edge from a top view, and each of the second extension electrodes is parallel or perpendicular to the edge from the top view.