Semiconductor devices comprising digit line contacts and related systems

1. A semiconductor device comprising:

laterally-neighboring word lines having respective word line caps thereon;

an active region between the laterally-neighboring word lines and word line caps;

a stack material adjacent the word line caps; and

a digit line contact between opposing substantially vertical surfaces of the stack material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps,

wherein a transition surface between and connecting the substantially horizontal surfaces and the substantially vertical surfaces of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact.

2. The semiconductor device of claim 1 , wherein a peripheral surface of the digit line contact is complementary in shape to the substantially horizontal surfaces of the word line caps, the opposing substantially vertical surfaces of the word line caps, and the transition surface therebetween such that the peripheral surface of the digit line contact is indented toward the longitudinal axis.

3. The semiconductor device of claim 1 , wherein the digit line contact is adjacent to the substantially horizontal surfaces, the substantially vertical surfaces, and the transition surface of the respective word line caps.

4. The semiconductor device of claim 1 , wherein the digit line contact tapers in width as the digit line contact extends axially along the longitudinal axis.

5. The semiconductor device of claim 1 , further comprising a digit line adjacent the stack material and the digit line contact.

6. The semiconductor device of claim 1 , wherein a barrier material intervenes between the digit line contact and respective substantially vertical surfaces of the stack material.

7. The semiconductor device of claim 6 , wherein a substantially horizontal surface of the digit line contact is coplanar with the substantially horizontal surface of the stack material.

8. The semiconductor device of claim 1 , wherein the stack material comprises an insulating material and a semiconductive material.

9. The semiconductor device of claim 8 , wherein the digit line contact comprises a horizontally elongated portion extending between opposing substantially vertical surfaces of the insulating material and opposing substantially vertical surfaces of a conductive material and a vertically elongated portion extending between opposing substantially vertical surfaces of the word line caps.

10. An electronic system comprising:

an input device;

an output device;

a processor device operably coupled to the input device and the output device; and

a memory device operably coupled to the processor device and comprising:

a digit line contact having a perimeter defined by laterally-neighboring word line caps, an insulating material, and a semiconductive material,

wherein a substantially horizontal surface, a substantially vertical surface, and a transition surface therebetween of the respective word line caps defines a portion of the perimeter of the digit line contact, wherein the transition surface of the word line caps projects toward a longitudinal axis extending centrally through the digit line contact.

11. The electronic system of claim 10 , wherein:

the digit line contact comprises an upper portion and a lower portion;

the upper portion of the digit line contact extends between opposing substantially vertical surfaces of the semiconductive material and between opposing substantially vertical surfaces of the word line caps;

the lower portion of the digit line contact extends between opposing substantially vertical surfaces of the laterally-neighboring word line caps; and

the upper portion having a greater lateral dimension than the lower portion.

12. The electronic system of claim 10 , wherein the memory device further comprises a digit line adjacent to the digit line contact.