Fill process optimization using feature scale modeling
Provided herein are systems and methods for optimizing feature fill processes. The feature fill optimization systems and methods may be used to optimize feature fill from a small number of patterned wafer tests. The systems and methods may be used for optimizing enhanced feature fill processes including those that include inhibition and/or etch operations along with deposition operations. Results from experiments may be used to calibrate a feature scale behavioral model. Once calibrated, parameter space may be iteratively explored to optimize the process.
1. A feature fill optimization computational system comprising:
one or more processors;
program instructions for executing on the one or more processors, the program instructions comprising instructions for:
obtaining metrology results from feature fill operations performed on a set of sample features, the feature fill operations comprising a deposition operation and one or both of an inhibition operation and an etch operation;
using the metrology results to calibrate a behavioral model of the feature fill operations; and
iteratively applying the calibrated behavioral model while varying one or more behavioral parameters to optimize the behavioral parameters.
2. The feature fill optimization computational system of claim 1 , wherein the instructions further comprise instructions for, from the optimized behavioral parameters, designing a feature fill process to be performed on a semiconductor substrate.
3. The feature fill optimization computational system of claim 1 , wherein the feature fill operations include an inhibition operation and the behavioral model includes an inhibition model.
4. The feature fill optimization computational system of claim 3 , wherein the feature fill operations include a first deposition operation prior to the inhibition operation and a second deposition operation after the inhibition operation.
5. The feature fill optimization computational system of claim 4 , wherein the behavioral model includes one or more deposition models.
6. The feature fill optimization computational system of claim 3 , wherein the feature fill operations include an etch operation and the behavioral model includes an etch model.
7. The feature fill optimization computational system of claim 1 , wherein the feature fill operations include multiple inhibition operations and the behavioral model includes one or more inhibition models.
8. The feature fill optimization computational system of claim 1 , wherein the feature fill operations include an etch operation and the behavioral model includes an etch model.
9. The feature fill optimization computational system of claim 8 , wherein the feature fill operations include a first deposition operation prior to the etch operation and a second deposition operation after the etch operation.
10. The feature fill optimization computational system of claim 1 , wherein the feature fill operations include multiple etch operations and the behavioral model includes one or more etch models.
11. The feature fill optimization computational system of claim 9 , wherein the behavioral model includes one or more deposition models.
12. The feature fill optimization computational system of claim 1 , wherein the metrology results comprise image analysis results.
13. The feature fill optimization computational system of claim 1 , wherein the set of sample features has no more than ten sample features.
14. The feature fill optimization computational system of claim 1 , wherein the instructions further comprise instructions to optimize the behavioral parameters based on one or more of electrical resistance, void area, and void location.
15. The feature fill optimization computational system of claim 1 , wherein instructions for calibrating the behavior model comprise instructions for adjusting the behavior model using discrepancies between feature fill profiles generated from the behavior model and the metrology results.
16. A computer-implemented method comprising:
obtaining metrology results from feature fill operations performed on a set of sample features, the feature fill operations comprising a deposition operation and one or both of an inhibition operation and an etch operation;
using the metrology results to calibrate a behavioral model of the feature fill operations wherein the metrology results comprise image analysis results and calibrating the behavior model comprises adjusting the behavior model using discrepancies between feature fill profiles generated from the behavior model and the image analysis results; and
iteratively applying the calibrated behavioral model while varying one or more behavioral parameters to optimize the behavioral parameters.
17. The method of claim 16 , further comprising, from the optimized behavioral parameters, designing a feature fill process to be performed on a semiconductor substrate.
18. The method of claim 17 , further comprising performing the feature fill process.
19. A computer program product for optimizing a feature fill process, the computer program product comprising a non-transitory computer readable medium on which is provided computer executable instructions for:
obtaining metrology results from feature fill operations performed on a set of sample features, the feature fill operations comprising a deposition operation and an inhibition operation;
using the metrology results to calibrate a behavioral model of the feature fill operations the behavior model comprising a deposition model and an inhibition model; and
iteratively applying the calibrated behavioral model while varying one or more behavioral parameters to optimize the behavioral parameters.
20. The feature fill optimization computational system of claim 19 , wherein the feature fill operations include a first deposition operation prior to an inhibition operation and a second deposition operation after the inhibition operation.