Nanostructured substrates for improved lift-off of III-V thin films
Reusable nanostructured substrates for forming semiconductor thin films, such as those used in solar cells, are configured with nanopillars to permit improved lift-off of thin films.
1. A method for preparing thin film materials, the method comprising:
forming a plurality of nanopillars on a crystalline semiconductor substrate;
growing a first thin film atop the plurality of nanopillars to form a nanostructured substrate;
separating the first thin film from the plurality of nanopillars via a first lift-off process;
re-using the nanostructured substrate to grow a second thin film atop the plurality of nanopillars; and
separating the second thin film from the plurality of nanopillars via a second lift-off process.
2. The method of claim 1 , wherein the plurality of nanopillars comprise at least a III-V semiconductor material.
3. The method of claim 1 , wherein the plurality of nanopillars are configured with a diameter between 50 nm and 900 nm, a height between 100 nm and 900 nm, and a spacing of between 10 nm and 500 nm.
4. The method of claim 1 , wherein the first thin film is configured for use in a solar cell.
5. The method of claim 1 , wherein the plurality of nanopillars provide strain relief for the first thin film during the growing the first thin film atop the plurality of nanopillars.
6. A method for preparing thin film materials, the method comprising:
depositing a plurality of nanospheres on a top surface of a crystalline semiconductor substrate;
forming a plurality of nanopillars in the crystalline semiconductor substrate via a first etching;
removing the plurality of nanospheres from the crystalline semiconductor substrate;
growing a first thin film atop the plurality of nanopillars to form a nanostructured substrate;
separating the first thin film from the plurality of nanopillars via a first lift-off process;
re-using the nanostructured substrate to grow a second thin film atop the plurality of nanopillars; and
separating the second thin film from the plurality of nanopillars via a second lift-off process.
7. The method of claim 6 , wherein the plurality of nanopillars are configured with a diameter between 50 nm and 900 nm, a height between 100 nm and 900 nm, and a spacing of between 10 nm and 500 nm.
8. The method of claim 6 , wherein the first thin film is configured for use in a solar cell.
9. The method of claim 6 , wherein the plurality of nanopillars provide strain relief for the first thin film during the growing the first thin film atop the plurality of nanopillars.
10. The method of claim 6 , wherein the plurality of nanospheres comprises a pre-assembled template.
11. The method of claim 6 , further comprising adjusting a size of the plurality of nanospheres via a plasma etching after the depositing the plurality of nanospheres.
12. The method of claim 11 , wherein the adjusting the size of the plurality of nanospheres comprises reducing an average diameter of the plurality of nanospheres to between 0.5 microns and 1.5 microns.
13. The method of claim 6 , wherein the crystalline semiconductor substrate comprises a III-V semiconductor material.
14. The method of claim 6 , wherein the first etching comprises plasma etching using at least one of Ar, BCl 3 , Cl 2 , O 2 , CH 4 , or H 2 .