Infrared emitting fluoride phosphor and infrared light emitting device
An infrared emitting fluoride phosphor and an infrared light emitting device are provided. The infrared emitting fluoride phosphor includes an activation center of Cr 3+ . The infrared light emitting device includes a light source and the infrared emitting fluoride phosphor. The light source is disposed to emit a first light, and the first light has a wavelength of 400-700 nm. The infrared emitting fluoride phosphor is configured to be excited by the first light to emit a first infrared ray. The first infrared ray has a wavelength of 650-1000 nm. The infrared light emitting device has a broad emission wavelength, such that it can be applied in variety of sensing device.
1. An infrared emitting fluoride phosphor, comprising an activation center of Cr 3+ , wherein the infrared emitting fluoride phosphor is at least one selected from the group consisting of (A) and (B):
(A) A 3 B 1-x F 6 :xCr 3+ , wherein A comprises Li, Na, K, Rb, Cs, NH 4 , or a combination of thereof, B comprises Al, Ga, or a combination of thereof, and 0<x≤1, and
(B) A 3 B 1-y-z F 6 :yCr 3+ , zNi 2+ , wherein A comprises Li, Na, K, Rb, Cs, NH 4 , or a combination of thereof, B comprises Al, Ga, or a combination of thereof, 0<y<1, 0<z<1, and 0<y+z≤1.
2. The infrared emitting fluoride phosphor of claim 1 , wherein the infrared emitting fluoride phosphor is excited by a light source of a wavelength of 400-700 nm to emit an infrared ray, and the infrared ray has an emission wavelength of 650-1000 nm.
3. The infrared emitting fluoride phosphor of claim 2 , wherein the infrared ray has a spectrum having a peak emission wavelength of 735-750 nm.
4. The infrared emitting fluoride phosphor of claim 3 , wherein the spectrum has a full width at half maximum (FWHM) of 90-110 nm.
5. An infrared light emitting device, comprising:
a light source configured to emit a first light, wherein the first light has a wavelength of 400-700 nm; and
an infrared emitting fluoride phosphor comprising an activation center of Cr 3+ , wherein the infrared emitting fluoride phosphor is capable of being excited by the first light to emit a first infrared ray, and the first infrared ray has an emission wavelength of 650-1000 nm, wherein the infrared emitting fluoride phosphor is at least one selected from the group consisting of (A) and (B):
(A) A 3 B 1-x F 6 :xCr 3+ , wherein A comprises Li, Na, K, Rb, Cs, NH 4 , or a combination of thereof, B comprises Al, Ga, or a combination of thereof, and 0<x≤1; and
(B) A 3 B 1-y-z F 6 :yCr 3+ , zNi 2+ , wherein A comprises Li, Na, K, Rb, Cs, NH 4 , or a combination of thereof, B comprises Al, Ga, or a combination of thereof, 0<y<1, 0<z<1, and 0<y+z≤1.
6. The infrared light emitting device of claim 5 , wherein the infrared emitting fluoride phosphor is dispersed in a packaging material, and the packaging material surrounds the light source.
7. The infrared light emitting device of claim 5 , further comprising a first wavelength converting layer in contact with a surface of the light source or disposed over the light source, wherein the first wavelength converting layer comprises the infrared emitting fluoride phosphor.
8. The infrared light emitting device of claim 5 , further comprising a phosphor, a quantum dot, or a combination of thereof, the phosphor, the quantum dot, or the combination of thereof configured to be excited by the first light to emit a second light, wherein the second light comprises a second infrared ray and/or a visible light,
wherein the first infrared ray has a first peak emission wavelength, the second infrared ray has a second peak emission wavelength, and the first peak emission wavelength is different from the second peak emission wavelength,
wherein the visible light has a wavelength of 400-700 nm, and the infrared emitting fluoride phosphor is configured to be excited by the visible light to emit a third infrared ray, wherein the third infrared ray has an emission wavelength of 650-1000 nm.
9. The infrared light emitting device of claim 8 , wherein the infrared emitting fluoride phosphor is blended with the phosphor, the quantum dot, or the combination of thereof in a packaging material, and the packaging material surrounds the light source.
10. The infrared light emitting device of claim 8 , further comprising a first wavelength converting layer in contact with a surface of the light source or disposed over the light source, wherein the first wavelength converting layer comprising:
the infrared emitting fluoride phosphor; and
the phosphor, the quantum dot, or the combination of thereof.
11. The infrared light emitting device of claim 8 , further comprising a first wavelength converting layer and a second wavelength converting layer, wherein the second wavelength converting layer is disposed between the first wavelength converting layer and the light source, the first wavelength converting layer comprises the infrared emitting fluoride phosphor, and the second wavelength converting layer comprises the phosphor, the quantum dot, or the combination of thereof.
12. The infrared light emitting device of claim 5 , wherein the first infrared ray has a spectrum having a peak emission wavelength of 735-750 nm.
13. The infrared light emitting device of claim 12 , wherein the spectrum has a full width at half maximum (FWHM) of 90-110 nm.
14. The infrared light emitting device of claim 5 , wherein the light source comprises a LED chip.
15. An infrared light emitting device, comprising:
a light source configured to emit a first light;
a first wavelength converting material configured to be excited by the first light to emit a second light, wherein the second light has a wavelength of 400-700 nm; and
an infrared emitting fluoride phosphor comprising an activation center of Cr 3+ , wherein the infrared emitting fluoride phosphor is configured to be excited by the second light to emit a first infrared ray, and the first infrared ray has an emission wavelength of 650-1000 nm, wherein the infrared emitting fluoride phosphor is at least one selected from the group consisting of (A) and (B):
(A) A 3 B 1-x F 6 :xCr 3+ , wherein A comprises Li, Na, K, Rb, Cs, NH 4 , or a combination of thereof, B comprises Al, Ga, or a combination of thereof, and 0<x≤1; and
(B) A 3 B 1-y-z F 6 :yCr 3+ , zNi 2+ , wherein A comprises Li, Na, K, Rb, Cs, NH 4 , or a combination of thereof, B comprises Al, Ga, or a combination of thereof, 0<y<1, 0<z<1, and 0<y+z≤1.
16. The infrared light emitting device of claim 15 , further comprising a second wavelength converting material, which is configured to be excited by the first light or the second light to emit a second infrared ray, wherein the first infrared ray has a first peak emission wavelength, the second infrared ray has a second peak emission wavelength, and the first peak emission wavelength is different from the second peak emission wavelength.
17. The infrared light emitting device of claim 15 , wherein the first wavelength converting material comprises a phosphor, a quantum dot, or a combination of thereof.
18. The infrared light emitting device of claim 15 , wherein the light source comprises a LED chip.