Nanoencapsulation methods for forming multilayer thin film structures and multilayer thin films formed therefrom
View Patent ↗A method for forming a multilayer thin film structure includes directly depositing an absorber layer to encapsulate a dielectric layer, and the dielectric layer encapsulates a reflective core particle. The method further including depositing an outer layer to encapsulate the absorber layer, and the multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°.
1. A method for forming a multilayer thin film structure comprising:
directly depositing an absorber layer to encapsulate a dielectric layer, wherein the dielectric layer directly encapsulates a reflective core particle; and
depositing an outer layer to encapsulate the absorber layer, wherein
the multilayer thin film structure has a hue shift of less than 30° in the Lab color space when viewed at angles from 0° to 45°,
the reflective core particle has a thickness from 10 nm to 5000 nm, and the reflective core particle has a length from 5 μm to 100 μm, and
the absorber layer is deposited by atomic layer deposition.
2. The method of claim 1 , wherein the method further comprises depositing the dielectric layer to directly encapsulate the reflective core particle.
3. The method of claim 1 , wherein the reflective core particle comprises Al.
4. The method of claim 1 , wherein the dielectric layer comprises Fe 2 O 3 , ZnS, or TiO 2 .
5. The method of claim 1 , wherein the dielectric layer has a thickness from 5 nm to 500 nm.
6. The method of claim 1 , wherein the absorber layer comprises W or Cr.
7. The method of claim 1 , wherein the absorber layer comprises W.
8. The method of claim 1 , wherein the absorber layer has a thickness from greater than 0 nm to 50 nm.
9. The method of claim 1 , wherein the outer layer comprises ZnS, TiO 2 , or Fe 2 O 3 .
10. The method of claim 1 , wherein the outer layer has a thickness from 0.1 quarter wave (QW) to less than or equal to 4.0 QW.
11. The method of claim 1 , wherein the outer layer is deposited by atomic layer deposition.
12. The method of claim 1 , wherein the method further comprises directly depositing a protective layer to encapsulate the absorber layer before depositing the outer layer.
13. The method of claim 12 , wherein the protective layer comprises Al 2 O 3 or SiO 2 .
14. The method of claim 12 , wherein the protective layer has a thickness from greater than 0 nm to 50 nm.
15. The method of claim 12 , wherein the protective layer is deposited by atomic layer deposition.