IP Library Granted Patent US 11,342,302
Granted Patent B2
US 11,342,302 · App. 16/264,957 · Granted May 24, 2022

Bonding with pre-deoxide process and apparatus for performing the same

Inventors: Chen-Hua Yu (Hsinchu, TW); Ying-Jui Huang (Zhubei, TW); Chih-Hang Tung (Hsinchu, TW); Tung-Liang Shao (Hsinchu, TW); Ching-Hua Hsieh (Hsinchu, TW); Chien Ling Hwang (Hsinchu, TW); Yi-Li Hsiao (Hsinchu, TW); Su-Chun Yang (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L24/81H01L21/4853H01L21/4864H01L24/75H01L25/50H01L21/6838H01L2224/7501H01L2224/757H01L2224/7565H01L2224/812H01L2224/8109H01L2224/81013H01L2224/81024H01L2224/81091H01L2224/81908
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Quick Facts
Patent No.
US 11,342,302
App. No.
16/264,957
Granted
May 24, 2022
Kind
B2
Abstract

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Claims (42)

1. A method comprising:

picking up a first package component, wherein the first package component comprises an electrical connector, and wherein the electrical connector is oxidized by nature oxidation to form an oxide layer that comprises a metal oxide on a surface of the electrical connector;

removing the oxide layer on the electrical connector of the first package component;

after the oxide layer is removed, placing the first package component on a second package component; and

bonding the first package component to the second package component.

2. The method of claim 1 further comprising transferring the first package component to the second package component, wherein the removing the oxide layer is performed during a period of time when the first package component is transferred to the second package component.

3. The method of claim 1 , wherein the removing the oxide layer comprises:

generating plasma from a forming gas; and

after the first package component is picked up and before the first package component is placed on the second package component, treating the first package component with the plasma.

4. The method of claim 1 , wherein the removing the oxide layer comprises:

bringing the first package component close to the second package component; and

injecting a plasma of a forming gas into a gap between the first package component and the second package component.

5. The method of claim 1 , wherein the removing the oxide layer comprises:

scanning the first package component and a plurality of additional package components with a plasma of a forming gas, wherein the first package component is identical to the plurality of additional package components.

6. The method of claim 1 , wherein the removing the oxide layer comprises:

before the first package component is picked up, treating the first package component and a plurality of additional package components with a plasma of a forming gas, wherein the first package component and the plurality of additional package components are treated simultaneously in a vacuum environment.

7. The method of claim 1 , wherein the removing the oxide layer comprises:

before the first package component is picked up, treating the first package component and a plurality of additional package components with a vapor-phase reductant, wherein the first package component and the plurality of additional package components are treated simultaneously in a negative-pressure environment.

8. The method of claim 1 , wherein the electrical connector comprises copper or tin, and wherein the oxide layer comprises a copper oxide or a tin oxide.

9. A method comprising:

picking up a first package component;

transporting the first package component toward a second package component;

with the first package component being picked up, removing a metal oxide layer on a surface of an electrical connector of the first package component;

after the metal oxide layer is removed, placing the first package component onto the second package component; and

heating the first package component and the second package component to bond the first package component to the second package component.

10. The method of claim 9 wherein the removing the metal oxide layer comprises:

conducting a plasma of a forming gas to the metal oxide layer to reduce the metal oxide layer back to metal.

11. The method of claim 10 , wherein the removing the metal oxide layer comprises:

stopping movement of the first package component, with the plasma being conducted to the metal oxide layer when the first package component is kept still.

12. The method of claim 10 , wherein the removing the metal oxide layer comprises conducting the plasma to the metal oxide layer when the first package component is moving.

13. The method of claim 12 further comprising moving a plasma output device along with the first package component to conduct the plasma to the metal oxide layer when the first package component is moving.

14. The method of claim 10 , wherein the first package component is picked up using a vacuum head, and the metal oxide layer is removed when the first package component is on the vacuum head.

15. A method comprising:

bring a first package component to a second package component, with first conductive features in the first package component facing second conductive features in the second package component;

introducing plasma generated from a forming gas into a gap between the first package component and the second package component, wherein the forming gas comprises hydrogen (H 2 ) and nitrogen (N 2 ), and wherein the plasma contacts both of the first conductive features and the second conductive features;

performing an alignment process to align the first conductive features to the second conductive features; and

bonding the first conductive features to the second conductive features.

16. The method of claim 15 , wherein oxide layers are on the first conductive features and the second conductive features before the plasma is introduced, and wherein the oxide layers are removed by the plasma.

17. The method of claim 15 , wherein the plasma is introduced at a time before the alignment process is started.

18. The method of claim 15 , wherein the plasma is introduced at a same time the alignment process is performed.

19. The method of claim 15 , wherein the gap has a height in a range between about 1 mm and about 5 mm.

20. The method of claim 15 , wherein the plasma is generated at a pressure equal to one atmosphere.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE 5TH, 6TH, 7TH AND 8TH INVENTOR WHO WERE INADVERTANTLY LEFT OFF PREVIOUSLY RECORDED ON REEL 048445 FRAME 0420. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNORS INTEREST. Recorded Feb 28, 2019
From: YU, CHEN-HUA; HUANG, YING-JUI; TUNG, CHIH-HANG; SHAO, TUNG-LIANG; HSIEH, CHING-HUA; HWANG, CHIEN LING; HSIAO, YI-LI; YANG, SU-CHUN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 048462/0876 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2019
From: YU, CHEN-HUA; HUANG, YING-JUI; TUNG, CHIH-HANG; SHAO, TUNG-LIANG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 048445/0420 →
Continuity (2)
Provisional Application 62660314 · Apr 20, 2018
Related Publication 20190326251A1 · Oct 24, 2019