Semiconductor device
A semiconductor device includes a first semiconductor element, a first signal terminal group, and a second signal terminal group disposed at an interval from the first signal terminal group. The first semiconductor element includes a control signal electrode to which a control signal for the first semiconductor element is input, and a temperature signal electrode that outputs a signal corresponding to temperature of the first semiconductor element. The temperature signal electrode is connected with a temperature signal terminal included in the first signal terminal group, and the control signal electrode is connected with a first control signal terminal included in the second signal terminal group.
1. A semiconductor device, comprising:
a first semiconductor element;
a first signal terminal group; and
a second signal terminal group disposed at an interval from the first signal terminal group, the second signal terminal group is independent from the first signal terminal group, wherein:
the first semiconductor element includes:
a control signal electrode to which a control signal for the first semiconductor element is input; and
a temperature signal electrode that outputs a signal corresponding to temperature of the first semiconductor element;
the temperature signal electrode is connected with a temperature signal terminal included in the first signal terminal group; and
the control signal electrode is connected with a first control signal terminal included in the second signal terminal group.
2. The semiconductor device according to claim 1 , wherein:
the first semiconductor element further includes a current signal electrode that outputs a signal corresponding to current flowing in the first semiconductor element; and
the current signal electrode is connected with a first current signal terminal included in the second signal terminal group.
3. The semiconductor device according to claim 1 , further comprising a second semiconductor element adjacent to one side of the first semiconductor element, wherein:
the second semiconductor element includes a control signal electrode to which a control signal for the second semiconductor element is input;
the control signal electrode of the second semiconductor element is connected with a second control signal terminal included in the first signal terminal group; and
the first signal terminal group further includes another signal terminal between the temperature signal terminal and the second control signal terminal.
4. The semiconductor device according to claim 3 , wherein:
the second semiconductor element further includes a current signal electrode that outputs a signal corresponding to current flowing in the second semiconductor element; and
the current signal electrode of the second semiconductor element is connected with a second current signal terminal that is included in the first signal terminal group and positioned between the temperature signal terminal and the second control signal terminal.
5. The semiconductor device according to claim 3 , wherein the temperature signal terminal and the second control signal terminal are disposed separately on both ends of the first signal terminal group, respectively.
6. The semiconductor device according to claim 3 , further comprising a sealing body that seals the first semiconductor element and the second semiconductor element, wherein:
the temperature signal terminal has a portion bent or curved towards the first semiconductor element inside the sealing body;
the second control signal terminal has a portion bent of curved towards the second semiconductor element inside the sealing body; and
the bent or curved portion of the temperature signal terminal and the bent or curved portion of the second control signal terminal are bent or curved in different directions from each other.
7. The semiconductor device according to claim 3 , wherein:
the second semiconductor element further includes a temperature signal electrode that outputs a signal corresponding to temperature of the second semiconductor element; and
the temperature signal electrode of the second semiconductor element is not connected with any signal terminal.
8. The semiconductor device according to claim 3 , further comprising a third semiconductor element adjacent to the other side of the first semiconductor element, wherein:
the third semiconductor element includes a control signal electrode to which a control signal for the third semiconductor element is input; and
the control signal electrode of the third semiconductor element is connected with a third control signal terminal included in the second signal terminal group.
9. The semiconductor device according to claim 8 , wherein the second signal terminal group further includes another signal terminal between the first control signal terminal and the third control signal terminal.
10. A semiconductor device comprising:
a first semiconductor element;
a second semiconductor element adjacent to one side of the first semiconductor element;
a third semiconductor element adjacent to the other side of the first semiconductor element;
a first signal terminal group having five signal terminals; and
a second signal terminal group that is disposed at an interval from the first signal terminal group and has six signal terminals, wherein:
each of the first semiconductor element, the second semiconductor element, and the third semiconductor element includes:
a control signal electrode to which a control signal for each of the first semiconductor element, the second semiconductor element, and the third semiconductor element is input;
two temperature signal electrodes that output a signal corresponding to temperature of each of the first semiconductor element, the second semiconductor element, and the third semiconductor element; and
two current signal electrodes that output a signal corresponding to current flowing in each of the first semiconductor element, the second semiconductor element, and the third semiconductor element,
the two temperature signal electrodes of the first semiconductor element are connected with two temperature signal terminals included in the first signal terminal group, respectively;
the control signal electrode of the first semiconductor element is connected with a first control signal terminal included in the second signal terminal group;
the two current signal electrodes of the first semiconductor element are connected with two first current signal terminals, respectively, the first current signal terminals being included in the second signal terminal group and adjacent to the first control signal terminal;
the two temperature signal electrodes of the second semiconductor element are not connected with any signal terminal;
the control signal electrode of the second semiconductor element is connected with a second control signal terminal included in the first signal terminal group;
the two current signal electrodes of the second semiconductor element are connected with two second current signal terminals, respectively, the second current signal terminals being included in the first signal terminal group and positioned between the second control signal terminal and the two temperature signal terminals;
the two temperature signal electrodes of the third semiconductor element are not connected with any signal terminal;
the control signal electrode of the third semiconductor element is connected with a third control signal terminal that is included in the second signal terminal group and adjacent to the two first current signal terminals; and
the two current signal electrodes of the third semiconductor element are connected with two third current signal terminals, respectively, the third current signal terminals being included in the second signal terminal group and adjacent to the third control signal terminal.
11. A semiconductor device, comprising:
a first semiconductor element;
a second semiconductor element adjacent to one side of the first semiconductor element;
a first signal terminal group; and
a second signal terminal group disposed at an interval from the first signal terminal group, wherein:
the first semiconductor element includes:
a control signal electrode to which a control signal for the first semiconductor element is input; and
a temperature signal electrode that outputs a signal corresponding to temperature of the first semiconductor element;
the temperature signal electrode is connected with a temperature signal terminal included in the first signal terminal group;
the control signal electrode is connected with a first control signal terminal included in the second signal terminal group;
the second semiconductor element includes a control signal electrode to which a control signal for the second semiconductor element is input;
the control signal electrode of the second semiconductor element is connected with a second control signal terminal included in the first signal terminal group;
the first signal terminal group further includes another signal terminal between the temperature signal terminal and the second control signal terminal;
the second semiconductor element further includes a current signal electrode that outputs a signal corresponding to current flowing in the second semiconductor element; and
the current signal electrode of the second semiconductor element is connected with a second current signal terminal that is included in the first signal terminal group and positioned between the temperature signal terminal and the second control signal terminal.
12. The semiconductor device according to claim 11 , wherein:
the first semiconductor element further includes a current signal electrode that outputs a signal corresponding to current flowing in the first semiconductor element; and
the current signal electrode is connected with a first current signal terminal included in the second signal terminal group.
13. The semiconductor device according to claim 11 , wherein the temperature signal terminal and the second control signal terminal are disposed separately on both ends of the first signal terminal group, respectively.
14. The semiconductor device according to claim 11 , further comprising a sealing body that seals the first semiconductor element and the second semiconductor element, wherein:
the temperature signal terminal has a portion bent or curved towards the first semiconductor element inside the sealing body;
the second control signal terminal has a portion bent of curved towards the second semiconductor element inside the sealing body; and
the bent or curved portion of the temperature signal terminal and the bent or curved portion of the second control signal terminal are bent or curved in different directions from each other.
15. The semiconductor device according to claim 11 , wherein:
the second semiconductor element further includes a temperature signal electrode that outputs a signal corresponding to temperature of the second semiconductor element; and
the temperature signal electrode of the second semiconductor element is not connected with any signal terminal.
16. The semiconductor device according to claim 11 , further comprising a third semiconductor element adjacent to the other side of the first semiconductor element, wherein:
the third semiconductor element includes a control signal electrode to which a control signal for the third semiconductor element is input; and
the control signal electrode of the third semiconductor element is connected with a third control signal terminal included in the second signal terminal group.
17. The semiconductor device according to claim 16 , wherein the second signal terminal group further includes another signal terminal between the first control signal terminal and the third control signal terminal.