Current detection circuit
View Patent ↗According to an embodiment(s), a current detection circuit has first and second main electrodes, a vertical structure output transistor that includes a first control electrode where a control signal is supplied thereto, a third main electrode that is connected to the first main electrode, a second control electrode that is connected to the first control electrode, and a vertical structure detection transistor that has a fourth main electrode. The current detection circuit has a voltage supply circuit that supplies a divided voltage of a voltage between the first and second main electrodes to the fourth main electrode.
1. A current detection circuit, comprising:
a vertical structure output transistor that includes a first main electrode, a second main electrode, and a first control electrode where on/off thereof is controlled by a control signal that is applied to the first control electrode;
a vertical structure detection transistor that has a third main electrode that is connected to the first main electrode, a second control electrode that is connected to the first control electrode, and a fourth main electrode;
a voltage-dividing circuit that is connected between the first main electrode and the second main electrode and outputs a divided voltage provided by dividing a voltage between the first main electrode and the second main electrode at a predetermined ratio;
a voltage supply circuit that supplies a voltage that is equal to an offset voltage combined with the divided voltage to the fourth main electrode; and
a comparison circuit that turns on/off of an operation of the voltage supply circuit depending on a result of a comparison between the divided voltage and a predetermined reference voltage.
2. The current detection circuit according to claim 1 , wherein the output transistor includes a P-channel-type vertical structure MOS transistor that has a drain electrode that is the first main electrode that is connected to a load, a source electrode that is the second main electrode that is connected to a power source terminal, and a gate electrode that is the first control electrode where the control signal is supplied thereto.
3. The current detection circuit according to claim 1 , wherein the output transistor includes an N-channel-type vertical structure MOS transistor that has a source electrode that is the second main electrode that is connected to a ground terminal, a drain electrode that is the first main electrode that is connected to a load, and a gate electrode that is the first control electrode where the control signal is supplied thereto.
4. The current detection circuit according to claim 1 , further comprising a variable resistance circuit where a voltage between both terminals of a load resistor that is connected to the fourth main electrode is applied between both terminals thereof and a resistance value thereof is switched in response to an output of the comparison circuit, and an output circuit that outputs a current that flows through the variable resistance circuit.
5. The current detection circuit according to claim 4 , further comprising a control circuit that outputs the control signal depending on a current that is output by the output circuit.
6. The current detection circuit according to claim 1 , wherein the voltage supply circuit has an amplification circuit that has an inverting input terminal and a non-inverting input terminal and the divided voltage and a voltage at the fourth main electrode are supplied to the inverting input terminal and the non-inverting input terminal of the amplification circuit, respectively.
7. The current detection circuit according to claim 1 , wherein the output transistor includes a P-channel-type vertical structure IGBT that has a collector electrode that is the first main electrode that is connected to a load, an emitter electrode that is the second main electrode that is connected to a power source terminal, and a gate electrode that is the first control electrode where the control signal is supplied thereto.
8. The current detection circuit according to claim 1 , wherein an on-resistance of the detection transistor is set at a high value relative to an on-resistance of the output transistor.
9. A current detection circuit, comprising:
a power source supply terminal;
an output terminal that is connected to a load;
a vertical structure output transistor that includes a first main electrode that is connected to the output terminal, a second main electrode that is connected to the power source supply terminal, and a first control electrode where on/off thereof is controlled by a control signal that is applied to the first control electrode;
a vertical structure detection transistor that has a third main electrode that is connected to the first main electrode, a second control electrode that is connected to the first control electrode, and a fourth main electrode;
a voltage-dividing circuit that is connected between the first main electrode and the second main electrode and outputs a divided voltage provided by dividing a voltage between the first main electrode and the second main electrode at a predetermined ratio;
a voltage supply circuit that supplies a voltage that is equal to an offset voltage combined with the divided voltage to the fourth main electrode; and
a comparison circuit that turns on/off of an operation of the voltage supply circuit depending on a result of a comparison between the divided voltage and a predetermined reference voltage.
10. The current detection circuit according to claim 9 , wherein an on-resistance of the detection transistor is set at a high value relative to an on-resistance of the output transistor.
11. The current detection circuit according to claim 9 , wherein the output transistor includes a P-channel-type vertical structure MOS transistor that has a drain electrode that is the first main electrode, a source electrode that is the second main electrode, and a gate electrode that is the first control electrode.
12. The current detection circuit according to claim 9 , wherein the output transistor includes a P-channel-type vertical structure IGBT that has a collector electrode that is the first main electrode, an emitter electrode that is the second main electrode, and a gate electrode that is the first control electrode.
13. The current detection circuit according to claim 9 , further comprising:
a resistance circuit where a voltage between both terminals of a load resistor that is connected to the fourth main electrode is applied between both terminals thereof;
an output circuit that outputs a current that flows through the resistance circuit; and
a control circuit that outputs the control signal depending on a current through the output circuit.
14. The current detection circuit according to claim 13 , wherein the resistance circuit includes a variable resistance circuit where a resistance value thereof is switched in response to an output of the comparison circuit.
15. A current detection circuit, comprising:
a power source supply terminal;
a ground terminal;
an output terminal that is connected to a load;
a vertical structure output transistor that includes a first main electrode that is connected to the output terminal, a second main electrode that is connected to the ground terminal, and a first control electrode where on/off thereof is controlled by a control signal that is applied to the first control electrode;
a vertical structure detection transistor that has a third main electrode that is connected to the first main electrode, a second control electrode that is connected to the first control electrode, and a fourth main electrode;
a voltage-dividing circuit that is connected between the first main electrode and the second main electrode and outputs a divided voltage provided by dividing a voltage between the first main electrode and the second main electrode at a predetermined ratio;
a voltage supply circuit that supplies a voltage that is equal to an offset voltage combined with the divided voltage to the fourth main electrode; and
a comparison circuit that turns on/off of an operation of the voltage supply circuit depending on a result of a comparison between the divided voltage and a predetermined reference voltage.
16. The current detection circuit according to claim 15 , wherein an on-resistance of the detection transistor is set at a high value relative to an on-resistance of the output transistor.
17. The current detection circuit according to claim 15 , wherein the output transistor includes an N-channel-type vertical structure MOS transistor that has a source electrode that is the second main electrode, a drain electrode that is the first main electrode, and a gate electrode that is the first control electrode.