Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio

1. A method, comprising:

introducing, into a semiconductor processing chamber housing a substrate material including an opening having a high aspect ratio, a reducing agent;

introducing, into the semiconductor processing chamber, a germanium amidinate precursor;

forming, in the opening, an atomic layer of germanium on the substrate material resulting from a reaction of the reducing agent and the germanium amidinate precursor; and

subsequent to forming the atomic layer of germanium:

purging the semiconductor processing chamber;

introducing, into the semiconductor processing chamber, a silicon precursor; and

doping the atomic layer of germanium with silicon resulting from a reaction of the atomic layer of germanium and the silicon precursor.

2. The method of claim 1 , further comprising, subsequent to forming the atomic layer of germanium on the substrate material:

purging the semiconductor processing chamber;

introducing, into the semiconductor processing chamber, the reducing agent;

introducing, into the semiconductor processing chamber, the germanium amidinate precursor; and

forming a different atomic layer of germanium on the atomic layer of germanium resulting from a reaction of the reducing agent and the germanium amidinate precursor.

3. The method of claim 1 , wherein introducing the reducing agent comprises introducing ammonia into the semiconductor processing chamber.

4. The method of claim 1 , further comprising, controlling a length of time of introducing the silicon precursor to control an amount of germanium in the silicon-doped atomic layer of germanium.

5. The method of claim 1 , further comprising, directly subsequent to forming the atomic layer of germanium on the substrate material, forming a film of germanium on the atomic layer of germanium via chemical vapor deposition (CVD).

6. The method of claim 1 , wherein forming the atomic layer of germanium includes heating the semiconductor processing chamber to a temperature between approximately 150° C. and approximately 325° C., inclusive.

7. The method of claim 1 , wherein forming the atomic layer of germanium is a purely thermal process.

8. The method of claim 1 , further comprising, subsequent to forming the atomic layer of germanium on the substrate material, forming a nitride material on the atomic layer of germanium.

9. A method, comprising:

forming, in an opening of a substrate material having a high aspect ratio, an atomic layer of germanium via a reaction of an ammonia reducing agent and a germanium amidinate precursor;

subsequent to forming the atomic layer of germanium:

purging a semiconductor processing chamber;

introducing, into the semiconductor processing chamber, a silicon precursor; and

doping the atomic layer of germanium with silicon resulting from a reaction of the atomic layer of germanium and the silicon precursor; and

forming a conformal layer of a silicon material on the atomic layer of germanium.

10. The method of claim 9 , wherein forming the atomic layer of germanium includes atomic layer deposition (ALD) of germanium on the substrate material.

11. The method of claim 9 , wherein forming the conformal layer of the silicon material includes forming a conformal layer of a silicon germanium material.

12. The method of claim 9 , wherein forming the conformal layer of the silicon material includes forming a conformal layer of a silicon poly material.

13. The method of claim 9 , wherein forming the atomic layer of germanium includes a plurality of cycles of depositing another atomic layer of germanium on a previous atomic layer of germanium.

14. The method of claim 13 , wherein the plurality of cycles of depositing another atomic layer of germanium form an approximately thirty-two angstroms thick layer of germanium on the substrate material.

15. The method of claim 13 , wherein the plurality of cycles of depositing another atomic layer of germanium include fifteen to forty-five cycles, each cycle depositing approximately 0.3 angstroms of germanium.

16. A method, comprising:

depositing an atomic layer of germanium on sidewalls and a bottom of an opening in a substrate material, wherein an aspect ratio of a height of the opening to a width of the opening is in a range of from 25:1 to 300:1, inclusive;

subsequent to depositing the atomic layer of germanium:

purging a semiconductor processing chamber;

introducing, into the semiconductor processing chamber, a silicon precursor; and

doping the atomic layer of germanium with silicon resulting from a reaction of the atomic layer of germanium and the silicon precursor; and

forming, in the opening, a conformal layer of a silicon material on the atomic layer of germanium.

17. The method of claim 16 , wherein forming the conformal layer of the silicon material includes forming the conformal layer of the silicon material having an approximately uniform thickness throughout the opening.

18. The method of claim 16 , wherein forming the conformal layer of the silicon material includes forming a continuous and conformal layer of the silicon material throughout the opening.

19. The method of claim 16 , further comprising forming, in the opening, a conductive material on the conformal layer of the silicon material.

20. A portion of a memory device formed by the method of claim 16 , wherein:

the memory device comprises at least one memory cell that includes:

at least one capacitor, as a data storage element, including the conformal layer of the silicon material; and

at least one access device coupled to the at least one capacitor.