Apparatus and method for controlling erasing data in ferroelectric memory cells
Methods and apparatuses for erasing data on a plurality of ferroelectric memory cells in a memory cell array in a memory apparatus are disclosed. An example apparatus includes: a memory cell array including a first plurality of word lines; a digit line; and a plurality of ferroelectric memory cells; a control circuit that provides a section select signal and a word line select signal to select a second plurality of word lines among the first plurality of word lines responsive to an address; and an address decoder that activates the second plurality of word lines. Each ferroelectric memory cell includes: a ferroelectric capacitor having a first terminal coupled to a cell plate node and a second terminal coupled to a selection circuit that couples the digit line to the second terminal responsive to a signal on a corresponding word line of the second plurality of word lines.
1. An apparatus comprising:
a memory cell array comprising:
a first plurality of first address lines;
a second address line; and
a plurality of ferroelectric memory cells, wherein each ferroelectric memory cell includes:
a ferroelectric capacitor configured to store data, the ferroelectric capacitor having a first terminal and further having a second terminal coupled to a cell plate node configured to receive a cell plate voltage; and
a control circuit configured to control a second address line voltage of the second address line in order to set the ferroelectric capacitor to a non-polarized state.
2. The apparatus of claim 1 , further comprising an address decoder configured to activate a second plurality of first address lines among the first plurality of first address lines, wherein the control circuit further comprises a first address pre-decoder configured to provide a section select signal and a first address select signal to the address decoder responsive to a first address, and
wherein the address decoder is configured to activate one or more first address lines responsive to the section select signal and the first address select signal.
3. The apparatus of claim 2 , wherein the control circuit further comprises an address counter configured to increase or decrease the address, and further configured to provide the address as the first address to the first address pre-decoder.
4. The apparatus of claim 2 , wherein the control circuit is configured to provide the section select signal and the first address select signal to the address decoder to select the second plurality of first address lines sequentially.
5. The apparatus of claim 2 , wherein the control circuit is configured to provide the section select signal and the first address select signal to the address decoder to select the second plurality of first address lines simultaneously.
6. The apparatus of claim 1 , wherein the control circuit comprises a row control circuit configured to provide a plurality of control signals to control the second address line voltage of the second address line, the plurality of control signals including:
a first control signal configured to set the second address line voltage to a first voltage of a first polarity;
a second control signal configured to set the second address line voltage to a second voltage of the first polarity having a smaller amplitude than the first voltage; and
a third control signal configured to set the second address line voltage to a third voltage that is substantially zero voltage.
7. The apparatus of claim 6 , wherein the memory cell array further includes a driver circuit configured to receive the first, second and third control signals, and
wherein the driver circuit is configured to provide the first, second and third voltages to the second address line responsive to the first, second and third control signals, respectively.
8. The apparatus of claim 7 , wherein the plurality of control signals further includes a fourth control signal configured to set the second address line voltage to a fourth voltage of a second polarity different from the first polarity.
9. The apparatus of claim 8 , wherein the driver circuit is further configured to provide the fourth voltage to the second address line responsive to the fourth control signal.
10. The apparatus of claim 8 , wherein the row control circuit is configured to activate the plurality of control signals in an order of the first control signal, the fourth control signal, the second control signal and the third control signal.
11. The apparatus of claim 1 , wherein the memory cell array further includes a cell plate driver configured to provide the cell plate voltage responsive to a cell plate control signal,
wherein the cell plate driver is configured to provide either a normal cell plate voltage in a normal mode or a wipe-out cell plate voltage lower than the normal cell plate voltage in a wipe-out mode responsive to the cell plate control signal in an active state, and further configured to provide substantially zero voltage responsive to the cell plate control signal in an inactive state.
12. The apparatus of claim 11 , wherein the row control circuit is configured to activate the plurality of control signals in a manner that the plurality of control signals and the cell plate control signal are activated in an order of the first control signal, the third control signal followed by the cell plate control signal, the second control signal and the third control signal.