Atom implantation for passivation of pillar material
Systems, apparatuses, and methods related to atom implantation for passivation of pillar material are described. An example apparatus includes a pillar of a semiconductor device. The pillar may include a first portion (e.g., a passivation material) formed from silicon nitride and an underlying second portion formed from a conductive material. A region of the first portion opposite from an interface between the first portion and the underlying second portion may be implanted with atoms of an element different from silicon (Si) and nitrogen (N) to enhance passivation of the implanted region.
1. A method, comprising:
forming silicon nitride as a passivation material on a conductive material on a surface of a substrate in a fabrication process for a semiconductor structure;
forming vertical openings through the passivation material and the conductive material to the substrate to form pillar structures;
depositing a spin-on carbon (SOC) coating material to a level along sidewalls of the pillar structures leaving exposed a top region of the passivation material;
implanting atoms, including atoms of carbon, into the passivation material to form an enhanced passivation material to a selected depth between a bottom surface of a remaining portion of the passivation material and a top surface of the remaining portion of the passivation material; and
removing the SOC coating material from the vertical openings in the fabrication process for the semiconductor structure, wherein implanting the atoms to form the enhanced passivation material provides increased resistance to removal of the enhanced passivation material during removal of the coating material.
2. The method of claim 1 , further comprising forming the silicon nitride as the passivation material on an upper surface of the conductive material to protect the conductive material from subsequent actions in the fabrication process for the semiconductor structure; and
forming the conductive material to operate as at least one of an access line, a sense line, or an electrode for a semiconductor memory device.
3. The method of claim 1 , further comprising etching the SOC coating material to the level along a sidewall of the remaining portion of the passivation material in the pillar structures to expose a larger portion of the sidewall of the remaining portion of the passivation material above the level.
4. The method of claim 1 , further comprising depositing the SOC coating material to block the implanting of the atoms of carbon below the selected depth.
5. The method of claim 1 , further comprising:
utilizing beam deposition from above an upper surface of the remaining portion of the passivation material to adjust implantation of the atoms, including the atoms of carbon, from substantially orthogonal to an upper surface of the remaining portion of the passivation material to an acute angle relative to the sidewall of the remaining portion of the passivation material in the pillar structures formed by the vertical openings;
implanting the atoms into the remaining portion of the passivation material to the selected depth and to an intended density of the atoms by adjustment of an angle of the beam deposition relative to the upper surface and the sidewall; and
reducing implantation of the atoms, including the atoms of carbon, through the sidewall below the selected depth due to the deposited SOC coating material in the vertical openings blocking the sidewall below the selected depth.
6. The method of claim 5 , further comprising implanting atoms, including the atoms of carbon, using a molecular beam epitaxy.
7. The method of claim 1 , wherein implanting the atoms further includes implanting atoms of phosphorus (P).
8. The method of claim 1 , wherein implanting the atoms further includes implanting atoms of boron (B).
9. The method of claim 1 , wherein implanting the atoms further includes implanting atoms of arsenic.