Systems and methods for crack detection
Embodiments related to systems and methods of crack detection in wafers (e.g., silicon wafers for photovoltaics, photovoltaic devices including silicon wafers) are disclosed. In some embodiments, an apparatus may include a light source configured to illuminate a side of a wafer and a camera directed towards a first face of the wafer. In some embodiments, a long axis of a field of view of the camera may be angled relative to a propagation direction of the light source. In some embodiments, at least a portion of the field of view of the camera is offset from the path of propagation of light emitted from the light source through the wafer. In some embodiments, at least a portion of a light beam may be oriented at a positive non-zero angle relative to the first face of the wafer, and a dimension of the light beam normal to the first face of the wafer may be larger than a thickness of the wafer.
1. An apparatus for crack detection comprising:
a light source constructed and arranged to illuminate a side of a wafer when the wafer is positioned in the apparatus, wherein the light source illuminates a portion of the side of the wafer less than a total length of the side;
a camera directed towards a first face of the wafer when the wafer is positioned in the apparatus; and
wherein a long axis of a field of view of the camera is angled relative to a propagation direction of the light source, and wherein a portion of a field of view of the camera is located outside a direct path of propagation of light from the light source.
2. The apparatus of claim 1 , wherein the camera is a linescan camera.
3. The apparatus of claim 1 , further comprising the wafer positioned in the apparatus.
4. The apparatus of claim 3 , wherein the wafer is at least partially transparent to light emitted by the light source.
5. The apparatus of claim 3 , wherein the wafer is a silicon wafer.
6. The apparatus of claim 1 , wherein the long axis of the camera is angled perpendicular to the propagation direction of the light source.
7. The apparatus of claim 1 , wherein the field of view of the camera is offset from the side of the wafer.
8. The apparatus of claim 7 , wherein the field of view of the camera is offset from the side of the wafer by between or equal to 100 microns and 2 mm.
9. The apparatus of claim 1 , wherein the light source is a laser.
10. The apparatus of claim 1 , wherein light source emits a collimated light beam.
11. An apparatus for crack detection comprising:
a chuck configured to hold a wafer disposed on the chuck;
a camera directed towards a first face of the wafer when the wafer is positioned in the chuck; and
a light source configured to emit a light beam towards a side of the wafer when the wafer is positioned in the chuck, wherein at least one portion of the light beam is oriented at a positive non-zero angle relative to the first face of the wafer when the wafer is positioned in the chuck, and wherein a dimension of the light beam that is normal to the first face of the wafer is larger than a thickness of the wafer, wherein the side of the wafer is offset from an edge of the chuck in a direction away from the light source so that at least a portion of the side of the wafer is blocked from receiving incident light from the light source.
12. The apparatus of claim 11 , wherein the wafer is at least partially transparent to light emitted by the light source.
13. The apparatus of claim 11 , wherein the wafer is a silicon wafer.
14. The apparatus of claim 11 , wherein the light beam includes a wavelength of 1.1 microns.
15. The apparatus of claim 11 , wherein the camera is a linescan camera.
16. The apparatus of claim 11 , wherein the at least one portion of the light beam is oriented at a positive non-zero angle relative to the first face of the wafer of between or equal to 0.1 degrees and 45 degrees.
17. The apparatus of claim 11 , wherein the chuck comprises and/or is coated with a material that absorbs light in a wavelength range of the light beam.
18. The apparatus of claim 11 , wherein the light source is a laser.
19. The apparatus of claim 11 , wherein the light beam is a collimated light beam.
20. An apparatus for crack detection comprising:
a light source constructed and arranged to illuminate a side of a wafer when the wafer is positioned in the apparatus; and
a camera directed towards a first face of the wafer when the wafer is positioned in the apparatus; and
wherein at least a portion of a field of view of the camera is offset from a path of propagation of light emitted from the light source.
21. The apparatus of claim 20 , wherein the path of propagation of light emitted by the light source extends through the field of view of the camera.
22. The apparatus of claim 20 , further comprising the wafer positioned in the apparatus.
23. The apparatus of claim 22 , wherein the wafer is at least partially transparent to light emitted by the light source.
24. The apparatus of claim 22 , wherein the wafer is a silicon wafer.
25. The apparatus of claim 20 , further comprising a controller operatively coupled to the camera, wherein the controller analyzes the at least one portion of the field of view offset from the path of propagation of light emitted from the light source to detect the presence of a crack in the substrate.
26. The apparatus of claim 20 , wherein the field of view of the camera is offset from the side of the wafer.
27. The apparatus of claim 26 , wherein the field of view of the camera is offset from the side of the wafer by between or equal to 100 microns and 2 mm.
28. The apparatus of claim 20 , wherein the light source is a laser.
29. The apparatus of claim 20 , wherein light source emits a collimated light beam.
30. The apparatus of claim 20 , wherein the at least one portion of the field of view of the camera is offset from the path of propagation of light emitted from the light source by at least 0.25 mm.
31. The apparatus of claim 20 , wherein the camera is a linescan camera, and wherein the at least one portion of the field of view receives light from vicinal illumination.