Treatment liquid, method for washing substrate, and method for manufacturing semiconductor device

1. A treatment liquid for a semiconductor device, comprising:

at least one hydroxylamine compound selected from the group consisting of a hydroxylamine and a hydroxylamine salt;

at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt;

a reducing agent other than the hydroxylamine compound or the reducing agent other than the hydroxylamine compound and a chelating agent and;

an organic solvent,

wherein the treatment liquid has a pH of 10 or more.

2. The treatment liquid according to claim 1 ,

which is used as a washing liquid for removing dry etching residues, a solution for removing a resist film used for the formation of a pattern, or a washing liquid for removing residues from a substrate after chemical mechanical polishing.

3. The treatment liquid according to claim 1 ,

which is used for a treatment to a metal layer of a substrate comprising the metal layer including Co or a Co alloy.

4. The treatment liquid according to claim 1 ,

wherein the content of the organic solvent is 45% by mass or more with respect to the total mass of the treatment liquid.

5. The treatment liquid according to claim 1 , further comprising water,

wherein with respect to the total mass of the treatment liquid, the content of water is 1% to 50% by mass, and

the content of the organic solvent is 45% to 98% by mass.

6. The treatment liquid according to claim 1 ,

wherein the content of the hydroxylamine compound is 3.5% by mass or more with respect to the total mass of the treatment liquid.

7. The treatment liquid according to claim 1 ,

wherein the chelating agent has at least one functional group selected from a carboxylic acid group, a sulfonic acid group, or a phosphonic acid group.

8. The treatment liquid according to claim 1 ,

wherein the basic compound is a cyclic compound.

9. The treatment liquid according to claim 8 ,

wherein the basic compound is at least one selected from the group consisting of tetrahydrofurfurylamine, N-(2-aminoethyl)piperazine, 1,8-diazabicyclo[5.4.0]-7-undecene, and 1,4-diazabicyclo[2.2.2]octane.

10. The treatment liquid according to claim 1 ,

wherein the reducing agent is one selected from the group consisting of a compound represented by Formula (B), ascorbic acids, and a compound containing a sulfur atom,

in Formula (B), R 1B to R 5B each independently represent a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted hydrocarbon group which may have a heteroatom.

11. The treatment liquid according to claim 1 , further comprising a corrosion inhibitor.

12. The treatment liquid according to claim 11 ,

which contains a compound represented by Formula (A) as the corrosion inhibitor,

in Formula (A), R 1A , R 2A , and R N each independently represent a hydrogen atom, or a substituted or unsubstituted hydrocarbon group, and further, R 1A and R 2A may be bonded to each other to form a ring.

13. The treatment liquid according to claim 1 ,

wherein the content of the hydroxylamine compound with respect to the content of the reducing agent is 0.1 to 20 in terms of mass ratio.

14. The treatment liquid according to claim 1 ,

wherein the content of the basic compound with respect to the content of the reducing agent is 0.1 to 20 in terms of mass ratio.

15. The treatment liquid according to claim 1 ,

which is used after being diluted 5 to 2,000 folds.

16. The treatment liquid according to claim 15 ,

which is diluted with a diluting liquid including water.

17. A method for washing a substrate, comprising a washing step of washing a substrate comprising a metal layer including Co or a Co alloy using the treatment liquid according to claim 1 .

18. The method for washing a substrate according to claim 17 ,

wherein the washing step is carried out using a diluted liquid after obtaining the diluted liquid by diluting the treatment liquid 5 to 2,000 folds.

19. The method for washing a substrate according to claim 18 ,

wherein the dilution is performed using a diluting liquid including water.

20. A method for manufacturing a semiconductor device, comprising a step of washing a substrate including a metal hard mask including at least one of Cu, Co, W, AlO x , AlN, AlO x N y , WO x , Ti, TiN, ZrO x , HfO x , or TaO x with the treatment liquid according to claim 1 , in which x and y are numbers represented by x=1 to 3 and y=1 to 2, respectively.

21. The treatment liquid according to claim 1 ,

wherein the reducing agent is one selected from the group consisting of a compound represented by Formula (B), ascorbic acids, and a mercapto compound,

in Formula (B), R 1B to R 5B each independently represent a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 12 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 12 carbon atoms, a substituted or unsubstituted aryl group having 6 to 22 carbon atoms or a substituted or unsubstituted aralkyl group having 7 to 23 carbon atoms, in which —CH 2 — may be substituted with any one divalent group or a combination of a plurality of divalent groups selected from the group consisting of —O—, —S—, —CO—, —SO 2 —, and -NR a —, R a represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms.

22. The treatment liquid according to claim 1 ,

wherein the reducing agent is one selected from the group consisting of a compound represented by Formula (B), ascorbic acids, mercaptosuccinic acid, 1-thioglycerol, sodium 3-mercapto-1-propanesulfonate, 2-mercaptoethanol, thioglycolic acid, and 3-mercapto-1-propanol,

in Formula (B), R 1B to R 5B each independently represent a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 12 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 12 carbon atoms, a substituted or unsubstituted aryl group having 6 to 22 carbon atoms or a substituted or unsubstituted aralkyl group having 7 to 23 carbon atoms, in which -CH 2 - may be substituted with any one divalent group or a combination of a plurality of divalent groups selected from the group consisting of —O—, —S—, —CO—, —SO 2 —, and —NR a —, R a represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms.

23. A treatment liquid for a semiconductor device, comprising:

at least one hydroxylamine compound selected from the group consisting of a hydroxylamine and a hydroxylamine salt;

at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt; and

a reducing agent other than the hydroxylamine compound or the reducing agent other than the hydroxylamine compound and a chelating agent;

wherein the treatment liquid has a pH of 10 or more,

the hydroxylamine compound includes an unsubstituted hydroxylamine or an unsubstituted hydroxylamine salt, and

the content of the hydroxylamine compound is 3.5% by mass or more with respect to the total mass of the treatment liquid.

24. The treatment liquid according to claim 23 ,

wherein the reducing agent is one selected from the group consisting of a compound represented by Formula (B), ascorbic acids, and a compound containing a sulfur atom,

in Formula (B), R 1B to R 5B each independently represent a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted hydrocarbon group which may have a heteroatom.

25. The treatment liquid according to claim 23 ,

wherein the reducing agent is one selected from the group consisting of a compound represented by Formula (B), ascorbic acids, and a mercapto compound,

in Formula (B), R 1B to R 5B each independently represent a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 12 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 12 carbon atoms, a substituted or unsubstituted aryl group having 6 to 22 carbon atoms or a substituted or unsubstituted aralkyl group having 7 to 23 carbon atoms, in which -CH 2 - may be substituted with any one divalent group or a combination of a plurality of divalent groups selected from the group consisting of —O—, —S—, —CO—, —SO 2 —, and —NR a —, R a represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms.

26. The treatment liquid according to claim 23 ,

wherein the reducing agent is one selected from the group consisting of a compound represented by Formula (B), ascorbic acids, mercaptosuccinic acid, 1-thioglycerol, sodium 3-mercapto-1-propanesulfonate, 2-mercaptoethanol, thioglycolic acid, and 3-mercapto-1-propanol,

in Formula (B), R 1B to R 5B each independently represent a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 12 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 12 carbon atoms, a substituted or unsubstituted aryl group having 6 to 22 carbon atoms or a substituted or unsubstituted aralkyl group having 7 to 23 carbon atoms, in which -CH 2 - may be substituted with any one divalent group or a combination of a plurality of divalent groups selected from the group consisting of —O—, —S—, —CO—, —SO 2 —, and —NR a —, R a represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms.

27. A treatment liquid for a semiconductor device, comprising:

at least one hydroxylamine compound selected from the group consisting of a hydroxylamine and a hydroxylamine salt;

at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt; and

at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent;

an organic solvent, and

having a pH of 10 or more,

wherein the content of the organic solvent is 45% by mass or more with respect to the total mass of the treatment liquid.