3D floating-gate multiple-input device

1. A multiple input device, comprising:

a semiconductor structure extending in a first direction;

a first dielectric material surrounding a portion of the semiconductor structure;

a floating gate on the first dielectric material and surrounding the portion of the semiconductor structure;

a second dielectric material on the floating gate and surrounding the portion of the semiconductor structure; and

a plurality of control gates on the second dielectric material wherein at least one of the control gates extends vertically away from the semiconductor structure in a second direction and at least one of the control gates extends vertically away from the semiconductor structure in a third direction, wherein the at least one of the control gates that extends vertically away from the semiconductor structure in the second direction vertically overlaps with the at least one of the control gates that extends vertically away from the semiconductor structure in the third direction.

2. The multiple input device of claim 1 , further comprising a source region surrounding a second portion of the semiconductor structure and a drain region surrounding a third portion of the semiconductor structure.

3. The multiple input device of claim 1 , further comprising a dielectric material that separates control gates that extend in the same direction.

4. The multiple input device of claim 1 , wherein a first plurality of the control gates extend vertically away from the semiconductor structure in the second direction and a second plurality of the control gates that extend vertically away from the semiconductor structure in the third direction.

5. The multiple input device of claim 1 , wherein the portion of the semiconductor structure includes a channel of the semiconductor device.

6. The multiple input device of claim 1 , further comprising a horizontally extending dielectric that separates the one or more control gates that extend vertically in the second direction from one or more control gates that extend vertically in the third direction.

7. The multiple input device of claim 1 , wherein the first dielectric material and the second dielectric material are high-k materials.

8. A multiple input device, comprising:

a vertically extending semiconductor structure;

a first dielectric material surrounding a portion of the semiconductor structure;

a floating gate on the first dielectric material and surrounding the portion of the semiconductor structure;

a second dielectric material surrounding the portion of the semiconductor structure and on the floating gate, wherein the first dielectric material, the floating gate and the second dielectric material are concentric; and

a plurality of control gates on the second dielectric material wherein the control gates surround the portion of the semiconductor structure and extend away from the portion of the semiconductor structure in different directions.

9. The multiple input device of claim 8 , further comprising a source region and a drain region located at opposing ends of the semiconductor structure.

10. The multiple input device of claim 8 , further comprising a gate spacer between the floating gate, the control gates and the source and drain regions.

11. The multiple input device of claim 8 , wherein a cross-section of the portion of the semiconductor structure has a circular geometry.

12. The multiple input device of claim 8 , wherein the portion of the semiconductor structure includes a channel of the multi-gate semiconductor device.

13. The multiple input device of claim 8 , wherein the first dielectric material and the second dielectric material are high-k materials.

14. A method, comprising:

forming a semiconductor structure extending in a first direction;

forming a first dielectric material surrounding a portion of the semiconductor structure;

forming a floating gate on the first dielectric material and surrounding the portion of the semiconductor structure;

forming a second dielectric material on the floating gate and surrounding the portion of the semiconductor structure; and

forming a plurality of control gates on the second dielectric material wherein at least one of the control gates is formed to extend vertically away from the semiconductor structure in a second direction and at least one of the control gates is formed to extend vertically away from the semiconductor structure in a third direction, wherein the at least one of the control gates that extends vertically away from the semiconductor structure in the second direction vertically overlaps with the at least one of the control gates that extends vertically away from the semiconductor structure in the third direction.

15. The method of claim 14 , further comprising forming a source region around a second portion of the semiconductor structure and a drain region around a third portion of the semiconductor structure.

16. The method of claim 14 , further comprising forming a dielectric material that separates control gates that extend in the same direction.

17. The method of claim 14 , wherein a first plurality of the control gates extend vertically away from the first semiconductor structure in the second direction and a second plurality of the control gates that extend vertically away from the first semiconductor structure in the third direction.

18. The method of claim 14 , wherein the portion of the semiconductor structure includes a channel of the semiconductor device.

19. The method of claim 14 , further comprising forming a horizontally extending dielectric that separates the one or more control gates that extend vertically in the second direction from the one or more control gates that extend vertically in the third direction.

20. A multiple input device, comprising:

a vertically extending semiconductor structure;

a first dielectric material surrounding a portion of the semiconductor structure, wherein a cross-section of the portion of the semiconductor structure has a circular geometry;

a floating gate on the first dielectric material and surrounding the portion of the semiconductor structure;

a second dielectric material surrounding the portion of the semiconductor structure and on the floating gate; and

a plurality of control gates on the second dielectric material wherein the control gates surround the portion of the semiconductor structure and extend away from the portion of the semiconductor structure in different directions.