Fully testible OTP memory
A method of testing an OTP memory is disclosed. An OTP program mechanism that uses heat accelerated electromigration can be fully tested. In one embodiment, an OTP cell's programmability can be tested if an initial OTP element resistance is less than a predetermined resistance, as such insures that sufficient heat can be generated to be programmable. A non-destructive program state, or fake reading 1, can be created by low-voltage programming a cell while reading the same cell at the same time. Accordingly, alternative 0s and 1s patterns can be generated to fully test every functional block of an OTP memory.
1. An OTP memory, comprising:
a plurality of OTP cells, at least one of the OTP cells including at least:
an OTP element including at least one electrical fuse as an OTP element having a first terminal coupled to a first supply voltage line, the at least one OTP element having a resistance; and
a selector coupled to the OTP element with at least one enable signal coupled to a second and/or a third supply voltage line;
at least one read circuit to convert the resistance of the OTP element into a logic state; and
test methods to apply low voltages or currents to the first, the second, and/or the third supply voltage lines during testing of the OTP element so as not to program the OTP element into a different logic state but to alter the read data output.
2. An OTP memory as recited in claim 1 , wherein an OTP cell is tested if the initial OTP element is less than 400 ohm to ensure programmability.
3. An OTP memory as recited in claim 1 , wherein an OTP cell is tested with reading its virgin state and reading non-destructive programmed state alternatively.
4. An OTP memory as recited in claim 1 , wherein a resistor coupled between at least one of the first, second, and/or the third supply voltage lines to at least one external power supplies.
5. An OTP memory as recited in claim 1 , wherein the resistance of the OTP element can be determined by sweeping voltages in at least one of the first, second, and/or the third supply voltage lines until the read output has flipped into a different logic state.
6. An OTP memory as recited in claim 1 , wherein the resistance of the OTP element can be determined by sweeping the current flowing through at least one of the first, second, and/or the third supply voltage lines until the read output has flipped into a different logic state.
7. An OTP memory as recited in claim 1 , wherein the OTP element includes at least one of the polysilicon, silicided polysilicon, metal, metal gate, CMOS gate, FinFET, or interconnect between FinFET, or a combination thereof.
8. An electronic system, comprising:
a processor; and
an One-Time Programmable (OTP) memory operatively connected to the processor, the OTP memory including a plurality of OTP cells, at least one of the OTP cells comprising:
an OTP element including at least one electrical fuse as an OTP element having a first terminal coupled to a first supply voltage line, the at least one OTP element having a resistance; and
a selector coupled to the OTP element with at least one enable signal coupled to a second and/or a third supply voltage line;
at least one read circuit to convert the resistance of the OTP element into a logic state; and
test methods to apply low voltages or currents to the first, the second, and/or the third supply voltage lines during testing of the OTP element so as not to program the OTP element into a different logic state but to alter the read data output.
9. An OTP memory as recited in claim 8 , wherein an OTP cell is tested if the initial OTP element is less than 400 ohm to ensure programmability.
10. An OTP memory as recited in claim 8 , wherein an OTP cell is tested with reading its virgin state and reading non-destructive programmed state alternatively.
11. An OTP memory as recited in claim 8 , wherein a resistor coupled between at least one of the first, second, and/or the third supply voltage lines to at least one external power supplies.
12. An OTP memory as recited in claim 8 , wherein the resistance of the OTP element is determined by sweeping voltages or currents at least one of the first, second, and/or the third supply voltage lines until the read output flipped into a different logic state.
13. A method of fully testing an OTP memory, the method comprising:
providing at least one method to generate non-destructive programmed state and non-destructive non-program state; and
generating a read output for non-destructive programmed state and non-destructive non-program state as program and non-program state readouts, respectively,
wherein the OTP memory is testable using one or more test patterns with alternative program and non-program state readouts by applying non-destructive programming and non-destructive non-programming methods.
14. A method of testing OTP memory as depicted in claim 13 , wherein the non-destructive programmed/non-program state readouts are produced by:
applying low voltages or currents to at least one OTP cell in a test program mode so as not to program the at least one OTP cell, and
reading the at least one OTP cell to obtain an opposite data readout.
15. A method of testing OTP memory as depicted in claim 14 , comprising:
providing a plurality of OTP cells, at least one of the OTP cells including at least:
an OTP element including at least one electrical fuse as OTP element having a first terminal coupled to a first supply voltage line; and
a selector coupled to the OTP element with at least one enable signal coupled to a second and/or a third supply voltage line, and
at least one read circuit to convert the resistance of the OTP element into a logic state; and
test methods to apply low voltages or currents to the first, the second, and/or the third supply voltage lines during testing of the OTP element so as not to program the OTP element into a different logic state but to alter the read data output.
16. A method of testing OTP memory as recited in claim 15 , wherein an OTP cell is tested programmable if the initial OTP element is less than 400 ohm.
17. A method of testing OTP memory as recited in claim 15 , wherein an OTP cell is tested programmable if the initial OTP element is less than 600 ohm.
18. A method of testing OTP memory as recited in claim 15 , wherein an OTP cell of the OTP memory is tested including at least one the following procedures: reading the OTP cell, reading the same OTP cell with opposite state, and reading the same OTP cell again before moving to a next OTP cell.
19. A method of testing OTP memory as recited in claim 15 , wherein an OTP cell of the OTP memory is tested including at least one of the following procedures: reading the OTP cell, fake reading a nearest neighbor OTP cell to an opposite state, and reading the same OTP cell again before moving to a next cell.
20. A method of testing OTP memory as recited in claim 15 , wherein the resistance of the OTP element is determined by sweeping voltages or currents in at least one of the first, second, and/or the third supply voltage lines until the read output flipped into a different logic state.