PROCESS KIT FOR PROCESSING REDUCED SIZED SUBSTRATES
Embodiments of a process kit for processing reduced size substrates are provided herein. In some embodiments, a process kit includes a substrate carrier having a pocket configured to hold a substrate, wherein the pocket extends partially through a thickness of the substrate carrier; and wherein the pocket includes an annular trench disposed at a periphery of a floor of the pocket.
1 . A process kit, comprising:
a substrate carrier having a pocket configured to hold a substrate, wherein the pocket extends partially through a thickness of the substrate carrier, and wherein the pocket includes an annular trench disposed at a periphery of a floor of the pocket.
2 . The process kit of claim 1 , wherein a diameter of the pocket is between about 200 mm and about 210 mm.
3 . The process kit of claim 1 , wherein a depth of the pocket is between about 0.5 mm and about 0.7 mm.
4 . The process kit of claim 1 , wherein the substrate carrier is formed of monosilicon quartz, ceramic, or silicon carbide.
5 . The process kit of claim 1 , wherein the substrate carrier includes at least one protrusion extending radially inward into the pocket.
6 . The process kit of claim 1 , wherein a depth of the annular trench is between about 0.2 mm and about 0.6 mm.
7 . The process kit of claim 1 , wherein a cross-sectional width of the annular trench is between about 0.8 mm and about 1.2 mm.
8 . The process kit of claim 1 , wherein the substrate carrier includes an alignment feature that extends into the pocket.
9 . A process kit, comprising:
a substrate carrier having a pocket configured to hold a substrate that extends partially through a thickness of the substrate carrier and having an uppermost surface that includes an annular upwardly extending protrusion; and
a shadow ring disposed above the substrate carrier to shield a portion of the substrate carrier radially outward of the pocket and having an annular recess in a lower surface corresponding with the annular upwardly extending protrusion of the substrate carrier, and wherein an inner diameter of the shadow ring is less than an outer diameter of the pocket.
10 . The process kit of claim 11 , wherein an upper surface of the shadow ring includes a surface disposed at an angle between about 2.5° and about 3.1° from a horizontal plane of the shadow ring.
11 . The process kit of claim 11 , wherein the pocket includes an annular trench disposed at a periphery of a floor of the pocket having a depth between about 0.2 mm and about 0.6 mm.
12 . The process kit of claim 11 , wherein the shadow ring includes a ledge disposed radially outward of the annular recess.
13 . The process kit of claim 11 , wherein the substrate carrier includes at least one protrusion extending radially inward into the pocket.
14 . The process kit of claim 11 , wherein the shadow ring is formed of quartz or ceramic.
15 . The process kit of claim 11 , further comprising a deposition ring disposed below the shadow ring and having at least one protrusion for supporting the shadow ring.
16 . A processing chamber, comprising:
a substrate support having a support surface;
a substrate carrier disposed atop the support surface, the substrate carrier having a pocket configured to hold a substrate;
a shadow ring disposed atop the substrate carrier to shield a portion of the substrate carrier radially outward of the pocket; and
a process kit having a process kit shield disposed about the substrate carrier and the shadow ring to define a processing volume above the substrate.
17 . The processing chamber of claim 16 , further comprising a deposition ring disposed below the shadow ring, wherein the shadow ring includes ledge at a radially outward portion and the deposition ring includes a plurality of protrusions that are configured to support the shadow ring along the ledge.
18 . The processing chamber of claim 16 , wherein the pocket includes an annular trench disposed at a periphery of a floor of the pocket.
19 . The processing chamber of claim 16 , wherein an inner diameter of the shadow ring is between 0.1 mm and about 0.2 mm less than a diameter of the pocket.
20 . The processing chamber of claim 16 , wherein an uppermost surface of the substrate carrier is configured to mate with a bottom surface of the shadow ring.