Discontinuous patterned bonds for semiconductor devices and associated systems and methods
Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
1. A method for fabricating a semiconductor device, the method comprising:
forming a plurality of solid-state transducers on a common device substrate by forming a pattern of trenches in a transducer structure to separate the plurality of solid-state transducers from one another, the pattern of trenches extending to the common device substrate;
forming a plurality of protrusions in a carrier substrate, the plurality of protrusions defining a plurality of recesses; and
bonding the carrier substrate to the common device substrate by positioning the plurality of solid-state transducers in corresponding ones of the plurality of recesses, respectively.
2. The method of claim 1 , wherein bonding the carrier substrate to the device substrate comprises positioning the plurality of protrusions in the pattern of trenches.
3. The method of claim 1 , wherein the plurality of recesses define a pattern of recesses.
4. The method of claim 3 , wherein the pattern of recesses is the inverse of the pattern of trenches.
5. The method of claim 3 , wherein bonding the carrier substrate to the device substrate comprises aligning the pattern of recesses with the pattern of trenches.
6. The method of claim 1 , further comprising bonding the carrier substrate to the device substrate with a discontinuous bond, wherein the discontinuous bond comprises a bonding material between individual solid-state transducers and blind ends of corresponding individual recesses.
7. The method of claim 6 , further comprising forming individual segments of the discontinuous bond by bonding the individual solid-state transducers to the blind ends of the corresponding recesses with the bonding material.
8. The method of claim 6 , further comprising restricting the bonding material from flowing across the carrier substrate by confining the bonding material to the plurality of recesses.
9. The method of claim 1 , further comprising removing the device substrate without removing the plurality of solid-state transducers.
10. The method of claim 1 , further comprising dicing the carrier substrate along the plurality of protrusions to form a plurality of individual semiconductor devices.
11. The method of claim 1 , further comprising elevating a temperature of the carrier substrate and the device substrate while bonding the carrier substrate to the device substrate.
12. The method of claim 1 , further comprising positioning at least one of the plurality of protrusions directly adjacent to a portion of the device substrate.
13. A method for fabricating a semiconductor device, the method comprising:
forming a plurality of solid-state transducers in a first pattern on a device substrate by forming trenches in a transducer structure to separate the plurality of solid-state transducers from one another, the trenches extending to the device substrate;
forming a carrier substrate with a plurality of protrusions in a second pattern; and
bonding the carrier substrate to the device substrate by aligning the first pattern and the second pattern.
14. The method of claim 13 , wherein the second pattern includes a pattern of recesses.
15. The method of claim 13 , wherein the first pattern is the inverse of the second pattern.
16. The method of claim 13 , further comprising bonding the carrier substrate to the device substrate with a bonding material.
17. The method of claim 13 , further comprising removing the device substrate without removing the plurality of solid-state transducers.
18. The method of claim 13 , further comprising dicing the carrier substrate along the plurality of protrusions to form a plurality of individual semiconductor devices.