A memory cell including a first transistor, an inverter, and a second transistor is provided. A first terminal of the first transistor serves as a data input terminal of the memory cell. A control terminal of the first transistor receives a write control signal. A second terminal of the first transistor is coupled to a memory node. An input terminal of the inverter is coupled to the memory node. An output terminal of the inverter serves as a data output terminal of the memory cell. A first terminal of the second transistor is coupled to a first voltage. A control terminal of the second transistor is coupled to the output terminal of the inverter. A second terminal of the second transistor is coupled to the memory node. A body of the second transistor is coupled to a second voltage. A voltage value of the second voltage is not equal to a voltage value of the first voltage to reduce a leakage current of the second transistor.
1. A memory cell, comprising:
a first transistor, a first terminal of the first transistor configured to serve as a data input terminal of the memory cell, a control terminal of the first transistor receiving a write control signal, and a second terminal of the first transistor coupled to a memory node;
an inverter, an input terminal of the inverter coupled to the memory node, and an output terminal of the inverter configured to serve as a data output terminal of the memory cell; and
a second transistor, a first terminal of the second transistor coupled to a first voltage, a control terminal of the second transistor coupled to the output terminal of the inverter, a second terminal of the second transistor coupled to the memory node, and a body of the second transistor coupled to a second voltage,
wherein a voltage value of the second voltage is not equal to a voltage value of the first voltage to reduce a leakage current of the second transistor.
2. The memory cell as claimed in claim 1 , wherein the second transistor is a P-type metal oxide semiconductor field effect transistor, the first voltage and the second voltage are positive voltages, and the voltage value of the second voltage is greater than the voltage value of the first voltage.
3. The memory cell as claimed in claim 2 , wherein the first transistor is an N-type metal oxide semiconductor field effect transistor, and a body of the first transistor is coupled to a negative voltage.
4. The memory cell as claimed in claim 2 , wherein the first transistor is a P-type metal oxide semiconductor field effect transistor, and a body of the first transistor is coupled to the second voltage.
5. The memory cell as claimed in claim 1 , wherein the second transistor is an N-type metal oxide semiconductor field effect transistor, the first voltage is a ground voltage, and the second voltage is a negative voltage.
6. The memory cell as claimed in claim 5 , wherein the first transistor is an N-type metal oxide semiconductor field effect transistor, and a body of the first transistor is coupled to the second voltage.
7. The memory cell as claimed in claim 5 , wherein the first transistor is a P-type metal oxide semiconductor field effect transistor, and a body of the first transistor is coupled to a third voltage, wherein the third voltage is a positive voltage, and a voltage value of the third voltage is greater than a voltage value of the data input terminal of the memory cell.
8. The memory cell as claimed in claim 1 , wherein the inverter is a complementary metal-oxide-semiconductor inverter.