Semiconductor device
A semiconductor device includes: a first semiconductor element including a first signal electrode; a second semiconductor element, laminated on the first semiconductor element, including a second signal electrode; a sealing body; a first signal terminal connected to the first signal electrode; and a second signal terminal connected to the second signal electrode, wherein: the first signal terminal and the second signal terminal project from the sealing body and extend in a first direction; the first signal terminal and the second signal terminal are distanced from each other in a second direction; the first signal electrode and the second signal electrode are placed at different positions in the second direction; the first signal electrode is provided closer to the first signal terminal than to the second signal terminal; and the second signal electrode is provided closer to the second signal terminal than to the first signal terminal.
1. A semiconductor device comprising:
a first semiconductor element including a first signal electrode;
a second semiconductor element including a second signal electrode, the second semiconductor element being laminated on the first semiconductor element;
a sealing body configured to seal the first semiconductor element and the second semiconductor element;
a first signal terminal connected to the first signal electrode; and
a second signal terminal connected to the second signal electrode, wherein:
the first signal terminal and the second signal terminal project from the sealing body and extend in a first direction;
the first signal terminal and the second signal terminal are distanced from each other in a second direction, the second direction being a direction perpendicular to the first direction and a laminating direction of the first semiconductor element and the second semiconductor element;
the first signal electrode and the second signal electrode are placed at different positions in the second direction;
the first signal electrode is provided closer to the first signal terminal than to the second signal terminal; and
the second signal electrode is provided closer to the second signal terminal than to the first signal terminal,
wherein:
the first semiconductor element and the second semiconductor element have the same configuration,
the second semiconductor element is placed at an angle 90 degrees shifted from the first semiconductor element,
at least one signal electrode of a plurality of signal electrodes is provided closer to one corner part than to the other corner parts among four corner parts of the first semiconductor element, the signal electrodes being included in the first signal electrode, and
all the signal electrodes included in the first signal electrode are provided closer to the one corner part than to the other corner parts among the four corner parts of the first semiconductor element.
2. The semiconductor device according to claim 1 , wherein:
the second semiconductor element is provided such that the second semiconductor element is reversed back-to-front from the first semiconductor element.
3. The semiconductor device according to claim 1 , wherein the at least one signal electrode provided closer to the one corner part than to the other corner parts is provided symmetrically with respect to a bisector of the one corner part.
4. The semiconductor device according to claim 1 , further comprising a power terminal electrically connected to the first semiconductor element, wherein the power terminal is placed on an opposite side from the first signal terminal across the sealing body.