Multi-level parameter and frequency pulsing with a low angular spread

1. A method for increasing a rate of processing a substrate, comprising:

generating a radio frequency (RF) signal;

pulsing a first parameter level of the RF signal to a second parameter level;

pulsing the second parameter level of the RF signal to a third parameter level of the RF signal; and

pulsing a first frequency level of the RF signal to a second frequency level of the RF signal concurrently with said pulsing the first parameter level to the second parameter level,

wherein said pulsing of the first parameter level to the second parameter level, pulsing of the second parameter level to the third parameter level, and pulsing of the first frequency level to the second frequency level increases the rate of processing the substrate.

2. The method of claim 1 , wherein the second parameter level is greater than the first parameter level and the third parameter level is greater than the second parameter level.

3. The method of claim 2 , wherein the second parameter level is greater than the first parameter level by at least a pre-determined percentage and the third parameter level is greater than the second parameter level by at least the pre-determined percentage, wherein the first parameter level has a plurality of values of a parameter, the second parameter level has a plurality of values of the parameter, and the third parameter level has a plurality of values of the parameter, wherein the plurality of values of the first parameter level are within a pre-defined range, the plurality of values of the second parameter level are within a pre-determined range, and the plurality of values of the third parameter level are within a pre-set range.

4. The method of claim 1 , wherein said pulsing the first parameter level to the second parameter level includes transitioning the first parameter level to the second parameter level at a time, wherein said pulsing the second parameter level to the third parameter level includes transitioning the second parameter level to the third parameter level at another time.

5. The method of claim 4 , wherein said pulsing the first frequency level of the RF signal to the second frequency level of the RF signal concurrently with said pulsing the first parameter level to the second parameter level includes transitioning the first frequency level to the second frequency level at the time at which the first parameter level transitions to the second parameter level.

6. The method of claim 1 , wherein the second frequency level is greater than the first frequency level by a pre-set percentage.

7. The method of claim 1 , wherein during a time period in which the RF signal has the first parameter level, the RF signal has the first frequency level, and wherein during a time period in which the RF signal has the second parameter level and the third parameter level, the RF signal has the second frequency level.

8. The method of claim 1 , further comprising:

pulsing the RF signal from the third parameter level to the first parameter level;

repeating said pulsing the RF signal from the first parameter level to the second parameter level and said pulsing the RF signal from the second parameter level to the third parameter level;

pulsing the RF signal from the second frequency level to the first frequency level; and

repeating said pulsing the RF signal from the first frequency level to the second frequency level.

9. The method of claim 1 , wherein the rate of processing the substrate includes an etch rate, wherein during an occurrence of the first frequency level and an occurrence of the first parameter level, low energy ions are generated within the plasma chamber, wherein the first frequency level decreases a temperature of the low energy ions to decrease an angular spread of the low energy ions to increase mask selectivity, wherein the second parameter level, the third parameter level, and the second frequency level increases energy of the low energy ions to decrease the angular spread to increase the etch rate of etching the substrate, wherein the second parameter level and the third parameter level generates high energy ions within the plasma chamber to increase the etch rate of etching the substrate.

10. A controller comprising:

a processor configured to control a radio frequency (RF) generator to generate an RF signal,

wherein the processor is configured to control the RF generator to pulse a first parameter level of the RF signal to a second parameter level of the RF signal,

wherein the processor is configured to control the RF generator to pulse the second parameter level of the RF signal to a third parameter level of the RF signal,

wherein the processor is configured to control the RF generator to pulse a first frequency level of the RF signal to a second frequency level of the RF signal, wherein the first frequency level is pulsed to the second frequency level concurrently with the pulsing of the first parameter level to the second parameter level; and

a memory device coupled to the processor.

11. The controller of claim 10 , wherein the second parameter level is greater than the first parameter level and the third parameter level is greater than the second parameter level.

12. The controller of claim 11 , wherein the second parameter level is greater than the first parameter level by at least a pre-determined percentage and the third parameter level is greater than the second parameter level by at least the pre-determined percentage, wherein the first parameter level has a plurality of values of a parameter, the second parameter level has a plurality of values of the parameter, and the third parameter level has a plurality of values of the parameter, wherein the plurality of values of the first parameter level are within a pre-defined range, the plurality of values of the second parameter level are within a pre-determined range, and the plurality of values of the third parameter level are within a pre-set range.

13. The controller of claim 10 , wherein to pulse the first parameter level to the second parameter level, the processor is configured to control the RF generator to transition the first parameter level to the second parameter level at a time, wherein to pulse the second parameter level to the third parameter level, the processor is configured to control the RF generator to transition the second parameter level to the third parameter level at another time.

14. The controller of claim 13 , wherein to pulse the first frequency level to the second frequency level concurrently with the pulsing of the first parameter level to the second parameter level, the processor is configured to control the RF generator to transition the first frequency level of the RF signal to the second frequency level of the RF signal at the time at which the first parameter level of the RF signal transitions to the second parameter level of the RF signal.

15. The controller of claim 10 , wherein the second frequency level is greater than the first frequency level by a pre-set percentage.

16. The controller of claim 10 , wherein the processor is configured to control the RF generator to generate the first parameter level during a time period in which the RF signal has the first frequency level, and wherein the processor is configured to control the RF generator to generate the second parameter level and the third parameter level during a time period in which the RF signal has the second frequency level.

17. The controller of claim 10 , wherein the processor is configured to control the RF generator to:

pulse the RF signal from the third parameter level to the first parameter level;

pulse the RF signal from the first parameter level to the second parameter level;

pulse the RF signal from the second parameter level to the third parameter level;

pulse the RF signal from the second frequency level to the first frequency level; and

pulse the RF signal from the first frequency level to the second frequency level.

18. A system comprising:

a radio frequency (RF) generator configured to generate an RF signal;

an impedance matching circuit coupled to the RF generator via an RF cable, wherein the impedance matching circuit is configured to receive the RF signal via the RF cable to output a modified RF signal;

a plasma chamber coupled to the impedance matching circuit to receive the modified RF signal; and

a host computer coupled to the RF generator, wherein the host computer is configured to:

generate a digital pulse signal;

send the digital pulse signal to the RF generator to pulse a first parameter level of the RF signal to a second parameter level of the RF signal and to pulse the second parameter level of the RF signal to a third parameter level of the RF signal;

generate another digital pulse signal; and

send the other digital pulse signal to the RF generator to pulse a first frequency level of the RF signal to a second frequency level of the RF signal, wherein the first frequency level is pulsed to the second frequency level concurrently with the pulsing of the first parameter level to the second parameter level.

19. The system of claim 18 , wherein the second parameter level is greater than the first parameter level and the third parameter level is greater than the second parameter level.

20. The system of claim 18 , wherein the second parameter level is greater than the first parameter level by at least a pre-determined percentage and the third parameter level is greater than the second parameter level by at least the pre-determined percentage, wherein the first parameter level has a plurality of values of a parameter, the second parameter level has a plurality of values of the parameter, and the third parameter level has a plurality of values of the parameter, wherein the plurality of values of the first parameter level are within a pre-defined range, the plurality of values of the second parameter level are within a pre-determined range, and the plurality of values of the third parameter level are within a pre-set range.