Gate electrode layout with expanded portions over active and isolation regions
Apparatuses with a gate electrode in a semiconductor device are described. An example apparatus includes an active region surrounded by an isolation region, and a gate electrode extending in a first direction to pass over the active region. The gate electrode includes a body gate portion over the active region, the body gate portion having a first gate length in a second direction perpendicular to the first direction, a lead-out portion over the isolation region, the lead-out portion having a second gate length in the second direction, the second gate length being greater than the first gate length, and a hammer-head portion having a first end in contact with the body gate portion and a second end opposite to the first end in contact with the hammer-head portion.
1. A device comprising:
an active region surrounded by an isolation region;
a dummy gate over the isolation region, the dummy gate extending in a first direction adjacently to the active region; and
a gate electrode extending in parallel to the dummy gate to pass over the active region, wherein the gate electrode comprises:
a first portion over the active region, the first portion having a first dimension in a second direction that is perpendicular to the first direction,
a second portion covering a portion of a first border between the active region and the isolation region, the second portion having a second dimension in the second direction, the second dimension being greater than the first dimension, and
a third portion over the isolation region, the third portion having a third dimension in the second direction, the third dimension being greater than the second dimension.
2. The device of claim 1 ,
wherein the dummy gate has an end termination over the isolation region, and
wherein a second border between the second and third portions is proximate to a line extending in the second direction from the end termination of the dummy gate.
3. The device of claim 2 ,
wherein the second border between the second and third portions is on the line extending in the second direction from the end termination of the dummy gate.
4. The device of claim 2 , wherein a distance between the second border and the first border is less than a distance between the line and the first border.
5. The device of claim 2 , wherein a distance between the second border and the first border is greater than a distance between the line and the first border.
6. An apparatus comprising:
an active region surrounded by an isolation region; and
a gate electrode extending in a first direction to pass over the active region, wherein the gate electrode includes:
a first portion over the active region, the first portion having a first gate length in a second direction perpendicular to the first direction;
a second portion over the isolation region, the second portion having a second gate length in the second direction, the second gate length being greater than the first gate length; and
a third portion having a first end in contact with the first portion and a second end opposite to the first end in contact with the second portion,
wherein the third portion has a third gate length in the second direction, the third gate length being greater than the first gate length and less than the second gate length,
wherein the third portion overlaps a border of the active region and the isolation region,
wherein the first portion has a plurality of first sides along the first direction, wherein a first distance is between the pluralities of the first sides,
wherein the second portion has a plurality of second sides along the first direction, wherein a second distance between the plurality of second sides is greater than the first distance, and
wherein the third portion has a plurality of third sides connecting the first portion and the second portion.
7. The apparatus of claim 6 , wherein the plurality of third sides extend along the second direction, and have a third distance that is greater than the first distance and less than the second distance.
8. The apparatus of claim 6 , wherein a third side of the plurality of third sides connects a first side of the first sides and a second side of the second sides.
9. The apparatus of claim 8 , wherein the third side has a shape of a line segment.
10. The apparatus of claim 8 , wherein the third side has a shape of an arc.
11. An apparatus comprising:
an active region surrounded by an isolation region; and
a gate electrode extending in a first direction to pass over the active region, wherein the gate electrode includes:
a first portion over the active region, the first portion having a first gate length in a second direction perpendicular to the first direction;
a second portion over the isolation region, the second portion having a second gate length in the second direction, the second gate length being greater than the first gate length;
a third portion having a first end in contact with the first portion and a second end opposite to the first end in contact with the second portion; and
a plurality of dummy gate electrodes over the isolation region adjacent to the active region and parallel to the gate electrode,
wherein the third portion has a third gate length in the second direction, the third gate length being greater than the first gate length and less than the second gate length,
wherein the third portion overlaps a border of the active region and the isolation region,
wherein each dummy gate electrode of the plurality of dummy gate electrodes has an end and has a first side along the first direction facing the active region, and
wherein the second portion is disposed outside of a region defined by a second side extending in the first direction from the end of the dummy gate electrodes and the first sides of the plurality of dummy gate electrodes.
12. The apparatus of claim 11 , wherein a border between the second portion and the third portion is proximate to the second side.