Semiconductor device structure and method for forming the same
A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The insulating layer has a trench partially exposing the substrate. The method includes forming a gate dielectric layer in the trench. The method includes forming a first metal-containing layer over the gate dielectric layer. The method includes forming a silicon-containing layer over the first metal-containing layer. The method includes forming a second metal-containing layer over the silicon-containing layer. The method includes forming a gate electrode layer in the trench and over the second metal-containing layer.
1. A method for forming a semiconductor device structure, comprising:
providing a substrate and an insulating layer over the substrate, wherein the insulating layer has a trench partially exposing the substrate;
forming a gate dielectric layer in the trench;
forming a first metal-containing layer over the gate dielectric layer;
forming a silicon-containing layer over the first metal-containing layer, wherein the silicon-containing layer is thinner than the first metal-containing layer;
forming a second metal-containing layer over the silicon-containing layer; and
forming a gate electrode layer in the trench and over the second metal-containing layer.
2. The method for forming the semiconductor device structure as claimed in claim 1 , wherein the silicon-containing layer is made of silicon oxide.
3. The method for forming the semiconductor device structure as claimed in claim 1 , wherein the forming of the silicon-containing layer over the first metal-containing layer comprises:
forming a silicon layer over the first metal-containing layer; and
oxidizing the silicon layer.
4. The method for forming the semiconductor device structure as claimed in claim 3 , wherein the forming of the silicon layer over the first metal-containing layer comprises:
applying a silicon-containing compound on the first metal-containing layer, wherein the applying of the silicon-containing compound on the first metal-containing layer and the forming of the first metal-containing layer over the gate dielectric layer are performed in a same chamber.
5. The method for forming the semiconductor device structure as claimed in claim 4 , wherein the silicon-containing compound is represented by formula SinH2n+2, and n is an integer from 1 to 10.
6. The method for forming the semiconductor device structure as claimed in claim 1 , wherein the forming of the second metal-containing layer over the silicon-containing layer comprises:
performing an atomic layer deposition process over the silicon-containing layer.
7. The method for forming the semiconductor device structure as claimed in claim 1 , wherein the silicon-containing layer conformally covers the first metal-containing layer.
8. The method for forming the semiconductor device structure as claimed in claim 1 , wherein the silicon-containing layer is thinner than the second metal-containing layer.
9. The method for forming the semiconductor device structure as claimed in claim 1 , wherein the second metal-containing layer is made of titanium nitride.
10. A method for forming a semiconductor device structure, comprising:
providing a substrate, a gate stack, a source/drain structure and an insulating layer, wherein the gate stack is over the substrate, the source/drain structure is in the substrate and adjacent to the gate stack, and the insulating layer is over the substrate and the source/drain structure;
forming a through hole in the insulating layer and exposing the source/drain structure, wherein the through hole has a first inner wall and a second inner wall opposite to the first inner wall;
forming a silicon-containing layer in the through hole to cover the source/drain structure and the first inner wall and the second inner wall of the through hole, wherein the silicon-containing layer continuously extends from the first inner wall to the second inner wall, and the silicon-containing layer has a substantially U shape in a cross-sectional view of the silicon-containing layer;
forming a barrier layer in the through hole and over the silicon-containing layer; and
forming a metal-containing layer in the through hole and over the barrier layer.
11. The method for forming the semiconductor device structure as claimed in claim 10 , wherein the forming of the barrier layer in the through hole and over the silicon-containing layer comprises:
performing an atomic layer deposition process over the silicon-containing layer.
12. The method for forming the semiconductor device structure as claimed in claim 10 , wherein the silicon-containing layer continuously and conformally covers the first inner wall of the through hole, the source/drain structure, and the second inner wall of the through hole.
13. The method for forming the semiconductor device structure as claimed in claim 10 , wherein the silicon-containing layer is made of silicon oxide.
14. The method for forming the semiconductor device structure as claimed in claim 10 , wherein the silicon-containing layer surrounds the metal-containing layer and the barrier layer.
15. A semiconductor device structure, comprising:
a substrate; and
a gate stack over the substrate, wherein the gate stack comprises a gate dielectric layer, a first metal-containing layer, a first silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate, the first silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the first silicon-containing layer is thinner than the first metal-containing layer.
16. The semiconductor device structure as claimed in claim 15 , further comprising:
an insulating layer over the substrate and surrounding the gate stack.
17. The semiconductor device structure as claimed in claim 16 , further comprising:
a source/drain structure in the substrate and adjacent to the gate stack, wherein the insulating layer covers the source/drain structure; and
a contact structure passing through the insulating layer and connected to the source/drain structure, wherein the contact structure comprises a second silicon-containing layer, a barrier layer, and a third metal-containing layer, the barrier layer is between the second silicon-containing layer and the third metal-containing layer, and the second silicon-containing layer is between the barrier layer and the insulating layer and between the barrier layer and the source/drain structure.
18. The semiconductor device structure as claimed in claim 17 , wherein the barrier layer conformally covers the second silicon-containing layer.
19. The semiconductor device structure as claimed in claim 15 , further comprising:
a semiconductor wire passing through the gate stack, wherein the first silicon-containing layer surrounds the semiconductor wire.
20. The semiconductor device structure as claimed in claim 15 , wherein the first silicon-containing layer is thinner than the second metal-containing layer.