Leakage current reduction type radio frequency switch device

1. A radio frequency switching device comprising:

a first series switching circuit connected between a first terminal and a second terminal;

a first shunt switching circuit connected between one end of the first series switching circuit and a ground;

a voltage generation circuit configured to:

generate a first gate voltage to be output to the first series switching circuit,

generate a second gate voltage to be output to the first shunt switching circuit based on a battery voltage, and

generate a bias voltage, which is higher than the second gate voltage, to control the first shunt switching circuit to enter an off state;

a first resistance circuit connected between a signal line, which is connected between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and

a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and a ground terminal of the first shunt switching circuit,

wherein the second resistance circuit is directly connected to the ground terminal.

2. The radio frequency switching device of claim 1 ,

wherein the first resistance circuit comprises a first resistor connected between the bias voltage terminal of the voltage generation circuit and the signal line, and

wherein the second resistance circuit includes a second resistor connected between the bias voltage terminal of the voltage generation circuit and the ground terminal.

3. The radio frequency switching device of claim 2 , wherein a first resistance value of the first resistance circuit is equal to a combined resistance value of the first shunt switching circuit in an off state and a resistance value of the second resistance circuit.

4. The radio frequency switching device of claim 1 , wherein the first series switching circuit comprises first to n-th MOS transistors connected in series between the first terminal and the second terminal, and

wherein gates of the first to n-th MOS transistors are configured to receive the first gate voltage from the voltage generation circuit.

5. The radio frequency switching device of claim 1 , wherein the first shunt switching circuit comprises first to n-th MOS transistors connected in series between the one end of the first series switching circuit and the ground, and

wherein gates of the first to n-th MOS transistors are configured to receive the second gate voltage from the voltage generation circuit.

6. The radio frequency switching device of claim 1 , wherein the voltage generation circuit is configured to:

control an on state of the first series switching circuit and an off state of the first shunt switching circuit in a signal transfer mode, using the first gate voltage, the second gate voltage, and the bias voltage, and

control an off state of the first series switching circuit and an on state of the first shunt switching circuit in a signal off mode, using the first gate voltage, the second gate voltage, and the bias voltage.

7. A radio frequency switching device comprising:

a first series switching circuit connected between a first terminal and a second terminal;

a first shunt switching circuit connected between one end of the first series switching circuit and a ground;

a voltage generation circuit configured to:

generate a first gate voltage to be output to the first series switching circuit,

generate a second gate voltage to be output to the first shunt switching circuit based on a battery voltage, and

generate a bias voltage, which is higher than the second gate voltage, to control the first shunt switching circuit to enter an off state;

a first resistance circuit connected between a signal line, which is connected between the first terminal and the second terminal, and a bias voltage terminal of the voltage generation circuit; and

a first capacitor circuit connected between a ground terminal of the first shunt switching circuit and the ground to block a direct current,

wherein the bias voltage is transmitted to the ground terminal without passing through the first shunt switching circuit.

8. The radio frequency switching device of claim 7 , further comprising: a second resistance circuit connected between the bias voltage terminal of the voltage generation circuit and the ground terminal of the first shunt switching circuit.

9. The radio frequency switching device of claim 8 ,

wherein the first resistance circuit comprises a first resistor connected between the bias voltage terminal of the voltage generation circuit and the signal line, and

wherein the second resistance circuit comprises a second resistor connected between the bias voltage terminal of the voltage generation circuit and the ground terminal.

10. The radio frequency switching device of claim 9 , wherein a first resistance value of the first resistance circuit is equal to a combined resistance value of the first shunt switching circuit in an off state and a resistance value of the second resistance circuit.

11. The radio frequency switching device of claim 8 , wherein the first series switching circuit comprises first to n-th MOS transistors connected in series between the first terminal and the second terminal, and

wherein gates of the first to n-th MOS transistors are configured to receive the first gate voltage from the voltage generation circuit.

12. The radio frequency switching device of claim 8 , wherein the first shunt switching circuit comprises first to n-th MOS transistors connected in series between the one end of the first series switching circuit and the ground, and

wherein gates of the first to n-th MOS transistors are configured to receive the second gate voltage from the voltage generation circuit.

13. The radio frequency switching device of claim 8 , wherein the voltage generation circuit is configured to:

control an on state of the first series switching circuit and an off state of the first shunt switching circuit in a signal transfer mode, using the first gate voltage, the second gate voltage, and the bias voltage, and

control an off state of the first series switching circuit and an on state of the first shunt switching circuit in a signal off mode, using the first gate voltage, the second gate voltage, and the bias voltage.

14. The radio frequency switching device of claim 8 , wherein the first capacitor circuit comprises:

a first capacitor connected between the ground terminal of the first shunt switching circuit and the ground and configured to block the direct current; and

an Electro-Static Discharge (ESD) protection circuit connected in parallel to the first capacitor and configured to constantly maintain voltages of both ends of the first capacitor.

15. The radio frequency switching device of claim 8 , wherein the first resistance circuit comprises a first MOS transistor always in an off state to provide an off resistance, and

wherein the first MOS transistor in the off state is configured to provide an Electro-Static Discharge (ESD) discharge path for protecting the first capacitor circuit from an ESD.

16. A radio frequency switching device comprising:

a radio frequency switching circuit connected between a first terminal and a second terminal; and

a voltage generation circuit configured to generate a first gate voltage, a second gate voltage, and a bias voltage, which is higher than the second gate voltage, for switching the first radio frequency switching circuit according to a band selection signal,

wherein the voltage generation circuit comprises:

a dynamic bias circuit configured to input a battery voltage and a reference voltage and to output the bias voltage and a buffer voltage; and

a switch control circuit configured to input the voltage buffer and to output the first gate voltage and the second gate voltage.

17. The radio frequency switching device according to claim 16 , wherein the switch control circuit comprises:

a level shifter configured to shift a voltage level of the band selection signal using the battery voltage and the buffer voltage; and

a buffer circuit configured to generate the first gate voltage and the second gate voltage according to the level-shifter band selection signal.

18. The radio frequency switching device according to claim 16 , further comprising:

a resistance circuit connected between a bias output terminal of the voltage generation circuit and the radio frequency switching circuit; and

a capacitor circuit connected between the radio frequency switching circuit and a ground.

19. The radio frequency switching device according to claim 18 , wherein the capacitor circuit comprises a constant voltage device and a capacitor connected in parallel.

20. A radio frequency switching device comprising:

a radio frequency switching circuit connected between a first terminal and a second terminal;

a voltage generation circuit configured to generate a first gate voltage, a second gate voltage, and a bias voltage, which is higher than the second gate voltage, for switching the first radio frequency switching circuit according to a band selection signal;

a resistance circuit connected between a bias output terminal of the voltage generation circuit and the radio frequency switching circuit; and

a capacitor circuit connected between the radio frequency switching circuit and a ground, wherein the capacitor circuit comprises a constant voltage device and a capacitor connected in parallel.