Reflow endurance improvements in triple-level cell NAND flash
Disclosed is a memory device and method of operating the same. In one embodiment, a method is disclosed comprising generating compressed data by compressing raw data for storage in a memory device, pre-programming a first region of the memory device with the compressed data, and, in response to detecting that the memory device has powered on, decompressing the compressed data, obtaining the raw data, and transferring the raw data to a second region of the memory device.
1. A method comprising:
generating compressed data by compressing raw data for storage in a memory device, the memory device comprising triple-level cell (TLC) NAND Flash memory cells;
configuring a first region of the memory cells to operate as pSLC NAND Flash cells, whereby the first region and a second region of the memory cells comprise an entire storage capacity of the memory device;
decompressing at least a portion of the compressed data to obtain decompressed data upon determining that a size of the compressed data exceeds a size of the first region;
extracting a subset of the compressed data after obtaining the decompressed data;
pre-programming the first region of the memory device with the subset of the compressed data;
writing the decompressed data to the second region; and
in response to detecting that the memory device has powered on:
decompressing the subset of the compressed data, obtaining the raw data,
transferring the raw data to the second region of the memory device, and
converting the first region to a TLC region after transferring the raw data such that the entire storage capacity of the memory device comprise TLC NAND Flash memory cells after the converting.
2. The method of claim 1 , the compressing raw data comprising compressing the raw data using a lossless compression algorithm.
3. The method of claim 2 , the compressing and decompressing performed by a controller in the memory device.
4. The method of claim 1 , further comprising enabling access to the memory by a host processor after transferring the raw data.
5. A non-transitory computer readable storage medium for tangibly storing computer program instructions capable of being executed by a computer processor, the computer program instructions defining steps of:
generating compressed data by compressing raw data for storage in a memory device, the memory device comprising triple-level cell (TLC) NAND Flash memory cells;
configuring a first region of the memory cells to operate as pSLC NAND Flash cells, whereby the first region and a second region of the memory cells comprise an entire storage capacity of the memory device;
decompressing at least a portion of the compressed data to obtain decompressed data upon determining that a size of the compressed data exceeds a size of the first region;
extracting a subset of the compressed data after obtaining the decompressed data;
pre-programming the first region of the memory device with the subset of the compressed data;
writing the decompressed data to the second region; and
in response to detecting that the memory device has powered on:
decompressing the subset of the compressed data, obtaining the raw data,
transferring the raw data to the second region of the memory device, and
converting the first region to a TLC region after transferring the raw data such that the entire storage capacity of the memory device comprise TLC NAND Flash memory cells after the converting.
6. The non-transitory computer readable storage medium of claim 5 , the compressing raw data comprising compressing the raw data using a lossless compression algorithm.
7. The non-transitory computer readable storage medium of claim 5 , further comprising enabling access to the memory by a host processor after transferring the raw data.
8. A device comprising:
a host interface;
a controller comprising firmware and a codec;
a NAND Flash memory array;
the controller configured to:
generate compressed data by compressing raw data received via the host interface, the NAND Flash memory array comprising triple-level cell (TLC) NAND Flash memory cells, wherein each cell in the memory cells is configurable to act as either a pseudo single-level cell (pSLC) NAND Flash cell or a TLC NAND Flash cell in response to a control signal;
configure a first region of the memory cells to operate as pSLC NAND Flash cells, whereby the first region and a second region of the memory cells comprise an entire storage capacity of a memory device;
decompress at least a portion of the compressed data to obtain decompressed data upon determining that a size of the compressed data exceeds a size of the first region;
extract a subset of the compressed data after obtaining the decompressed data;
pre-program the first region of the NAND Flash memory array with the subset of the compressed data;
writing the decompressed data to the second region; and
in response to detecting an initial power-on:
decompressing the subset of the compressed data, obtaining the raw data,
transferring the raw data to the second region of the NAND Flash memory array, and
converting the first region to a TLC region after transferring the raw data such that the entire storage capacity of the memory device comprise TLC NAND Flash memory cells after the converting.
9. The device of claim 8 , the controller further comprising firmware, the controller configured to update the firmware to convert the first region to a TLC region.
10. The device of claim 8 , the compressing raw data comprising compressing the raw data using a lossless compression algorithm.
11. The device of claim 8 , the controller further configured to enable access to the NAND Flash memory array by a host processor after transferring the raw data.