Substrate treatment apparatus and manufacturing method of a semiconductor device
A substrate treatment apparatus according to an embodiment of the present invention includes a chamber, a stage, a gas discharger, a plasma generator, and a rotation mechanism. The stage supports a semiconductor substrate in the chamber. The gas discharger discharges a film formation gas toward the semiconductor substrate from a position opposing the stage. The plasma generator is provided on the gas discharger and generates plasma in the chamber during discharge of the film formation gas. The rotation mechanism rotates the stage during generation of the plasma.
1. A substrate treatment apparatus comprising:
a chamber;
a stage to support a semiconductor substrate in the chamber;
a gas discharger to discharge a film formation gas toward the semiconductor substrate from a position opposing the stage;
a plasma generator provided on the gas discharger and to generate plasma in the chamber during discharge of the film formation gas; and
a rotation mechanism to rotate the stage during generation of the plasma, wherein
the stage and the gas discharger are arranged in a central portion of the chamber, and
an inlet port to introduce an inert gas into the chamber is provided outside the central portion, and
an exhaust port to exhaust the film formation gas and the inert gas from the chamber is provided between the gas discharger and the inlet port, and
the gas discharger includes a plurality of supply ports to which the film formation gas is supplied, and a plurality of discharge ports to discharge the film formation gas supplied through the supply ports, and
a diameter of the each discharge port is smaller than that of the each supply port, the each discharge port and the each supply port being connected via an opening that is tapered such that the film formation gas gains an increased flow rate directed toward the semiconductor substrate in the chamber, and
the gas discharger extends linearly at the central portion of the chamber, and
the supply ports are unidirectionally arranged at equal intervals on an upper surface of the gas discharger, and
a slit is formed in a bottom surface of the gas discharger, and
the discharge ports are arrayed to be opposed to the supply ports, respectively, at the slit, and
the exhaust port is provided on a side surface of the gas discharger.
2. The substrate treatment apparatus according to claim 1 ,
further comprising a plurality of valves provided to respective supply paths, the supply paths individually supplying the film formation gas to their respective supply ports.
3. The substrate treatment apparatus according to claim 1 , further comprising a heater that surrounds the chamber.
4. The substrate treatment apparatus according to claim 1 , wherein the film formation gas is an oxidizing gas or a nitriding gas.