Stacked photodetector assemblies
An exemplary stacked photodetector assembly includes a first wafer and a second wafer bonded to the first wafer. The first wafer includes a SPAD and has a thickness T 1 configured to minimize absorption by the first wafer of photons included in light incident upon the first wafer while the SPAD is in a disarmed state. The second wafer has a thickness T 2 configured to provide structural support for the first wafer. The stacked photodetector assembly includes a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD.
1. A stacked photodetector assembly comprising:
a first wafer including a single photon avalanche diode (SPAD), the first wafer having a thickness T 1 configured to minimize absorption by the first wafer of photons included in light incident upon the first wafer while the SPAD is in a disarmed state; and
a second wafer having a thickness T 2 including a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD, the second wafer bonded to the first wafer in a stacked configuration;
wherein the fast gating circuit includes a capacitor configured to:
be charged, while the SPAD is in the disarmed state, with a bias voltage by a voltage source, and
supply, while the SPAD is in an armed state, the bias voltage to the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
2. The stacked photodetector assembly of claim 1 , wherein the light comprises near infrared light.
3. The stacked photodetector assembly of claim 1 , wherein the thickness T 1 of the first wafer is less than 10 microns.
4. The stacked photodetector assembly of claim 1 , wherein the thickness T 2 of the second wafer is greater than 250 microns to provide structural support for the first wafer.
5. The stacked photodetector assembly of claim 1 , wherein the fast gating circuit is electrically isolated from the SPAD.
6. The stacked photodetector assembly of claim 1 , wherein the SPAD is a backside illuminated SPAD.
7. The stacked photodetector assembly of claim 1 , further comprising a reflective mask on the first wafer and configured to block light outside of an active region of the SPAD.
8. The stacked photodetector assembly of claim 1 , wherein:
the first wafer includes a plurality of other SPADs; and
the second wafer includes a plurality of respective other fast gating circuits electrically coupled to each of the plurality of other SPADs.
9. The stacked photodetector assembly of claim 1 , wherein the capacitor supplies the bias voltage to the SPAD while the capacitor is disconnected from the voltage source.
10. The stacked photodetector assembly of claim 1 , further comprising:
an additional voltage source connected to an input node of the SPAD and configured to supply a reverse bias voltage at the input node, the reverse bias voltage having a magnitude that is equal to or less than the breakdown voltage of the SPAD, wherein the voltage source is configured to selectively connect to the capacitor to charge the capacitor with the bias voltage, the bias voltage being an excess bias voltage that has a magnitude that is less than the magnitude of the reverse bias voltage supplied by the additional voltage source; and
a switch configuration configured to put the SPAD into the armed state by connecting the capacitor to an output node of the SPAD while the capacitor is charged with the excess bias voltage and while the capacitor is disconnected from the voltage source;
wherein, when the capacitor is connected to the SPAD, the capacitor supplies the excess bias voltage to the SPAD such that a voltage across the SPAD is greater than the breakdown voltage.
11. The stacked photodetector assembly of claim 1 , wherein:
the capacitor is connected to the SPAD;
the voltage source is configured to selectively connect to the capacitor to charge the capacitor with the bias voltage, the bias voltage having a magnitude that is equal to or less than a breakdown voltage of the SPAD; and
the fast gating circuit further comprises:
an additional voltage source configured to supply a reverse excess bias voltage having a magnitude that is less than the magnitude of the bias voltage; and
a switch configuration configured to put the SPAD into the armed state by connecting the additional voltage source to an input node of the SPAD while the capacitor is both charged with the bias voltage and disconnected from the voltage source.
12. The stacked photodetector assembly of claim 1 , wherein the first wafer is fabricated as a silicon on insulator wafer.
13. A stacked photodetector assembly comprising:
a first wafer including
a single photon avalanche diode (SPAD), and
a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD,
the first wafer having a thickness T 1 configured to minimize absorption by the first wafer of photons included in light incident upon the first wafer while the SPAD is in a disarmed state; and
a second wafer having a thickness T 2 bonded to the first wafer in a stacked configuration and configured to provide structural support for the first wafer, the second wafer not including circuitry configured to control the SPAD.
14. The stacked photodetector assembly of claim 13 , wherein the light comprises near infrared light.
15. The stacked photodetector assembly of claim 13 , wherein the thickness T 1 of the first wafer is less than 10 microns.
16. The stacked photodetector assembly of claim 13 , wherein the fast gating circuit includes a capacitor configured to:
be charged, while the SPAD is in the disarmed state, with a bias voltage by a voltage source, and
supply, while the SPAD is in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
17. A stacked photodetector assembly comprising:
a single photon avalanche diode (SPAD);
a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD;
a first wafer including the SPAD and the fast gating circuit, the first wafer having a thickness T 1 configured to minimize absorption of photons included in light incident upon the first wafer while the SPAD is in a disarmed state; and
a handle wafer having a thickness T 2 bonded to the first wafer in a stacked configuration.
18. The stacked photodetector assembly of claim 17 , wherein the fast gating circuit includes a capacitor configured to:
be charged, while the SPAD is in the disarmed state, with a bias voltage by a voltage source, and
supply, while the SPAD is in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
19. A stacked photodetector assembly comprising:
a single photon avalanche diode (SPAD);
a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD;
a first wafer including the SPAD, the first wafer having a thickness T 1 configured to minimize absorption of photons included in light incident upon the first wafer while the SPAD is in a disarmed state; and
a second wafer having a thickness T 2 bonded to the first wafer in a stacked configuration;
wherein the fast gating circuit includes a capacitor configured to:
be charged, while the SPAD is in the disarmed state, with a bias voltage by a voltage source, and
supply, while the SPAD is in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
20. The stacked photodetector assembly of claim 19 , wherein the second wafer includes the fast gating circuit.
21. The stacked photodetector assembly of claim 19 , wherein the first wafer includes the fast gating circuit.