IP Library › Granted Patent US 10,720,903
Granted Patent B2
US 10,720,903 · App. 16/283,868 · Granted Jul 21, 2020

Acoustic wave filter device, radio-frequency front-end circuit, and communication apparatus

Inventor: Koji Nosaka (Nagaokakyo, JP)
Assignee: Murata Manufacturing Co., Ltd.
H03H9/6483H03H7/0161H03H9/1457H03H9/14541H03H9/205H03H9/25H03H9/6403H03H9/6426H03H9/725H03H9/542
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Quick Facts
Patent No.
US 10,720,903
App. No.
16/283,868
Granted
Jul 21, 2020
Kind
B2
Abstract

A filter includes a series-arm resonator connected on a path connecting input/output terminals, and first and second parallel-arm resonators connected between the same node on the path and ground. A resonant frequency of the second parallel-arm resonator is higher than a resonant frequency of the first parallel-arm resonator, and an anti-resonant frequency of the second parallel-arm resonator is higher than an anti-resonant frequency of the first parallel-arm resonator. Each of the first and second parallel-arm resonators includes an acoustic wave resonator including an IDT electrode. The IDT electrode in the second parallel-arm resonator has a higher duty ratio than the IDT electrode in the first parallel-arm resonator, where the duty ratio is the ratio of the width to the pitch of electrode fingers.

Claims (42)

1. an acoustic wave filter device comprising:

a series-arm resonant circuit connected on a path connecting a first input/output terminal and a second input/output terminal; and

a first parallel-arm resonator and a second parallel-arm resonator connected between a node on the path and ground; wherein,

a resonant frequency of the second parallel-arm resonator is higher than a resonant frequency of the first parallel-arm resonator;

an anti-resonant frequency of the second parallel-arm resonator is higher than an anti-resonant frequency of the first parallel-arm resonator;

each of the first parallel-arm resonator and the second parallel-arm resonator includes an acoustic wave resonator including an IDT electrode; and

the IDT electrode in the second parallel-arm resonator has a duty ratio that is higher than a duty ratio of the IDT electrode in the first parallel-arm resonator, the duty ratio being a ratio of a width of a plurality of electrode fingers to a pitch of the plurality of electrode fingers included in the corresponding IDT electrode.

2. The acoustic wave filter device according to claim 1 , wherein

the series-arm resonant circuit includes an acoustic wave resonator including an IDT electrode; and

the duty ratio of the IDT electrode in the first parallel-arm resonator is lower than a duty ratio of the IDT electrode in the series-arm resonant circuit.

3. The acoustic wave filter device according to claim 1 , wherein the first parallel-arm resonator and the second parallel-arm resonator are connected in parallel.

4. The acoustic wave filter device according to claim 3 , further comprising:

an impedance element and a switch element that are connected in parallel and that are connected in series with at least one of the first parallel-arm resonator and the second parallel-arm resonator.

5. The acoustic wave filter device according to claim 4 , wherein the impedance element and the switch element that are connected in parallel are connected in series with only the second parallel-arm resonator of the first and second parallel-arm resonators.

6. The acoustic wave filter device according to claim 4 , wherein the impedance element and the switch element that are connected in parallel are connected in series with only the first parallel-arm resonator of the first and second parallel-arm resonators.

7. The acoustic wave filter device according to claim 4 , wherein the impedance element and the switch element that are connected in parallel are connected in series with a circuit including the first parallel-arm resonator and the second parallel-arm resonator connected in parallel.

8. The acoustic wave filter device according to claim 3 , further comprising:

an impedance element and a switch element that are connected in parallel and that are connected in series with only the first parallel-arm resonator of the first and second parallel-arm resonators; and

another impedance element and another switch element that are connected in parallel and that are connected in series with only the second parallel-arm resonator of the first and second parallel-arm resonators.

9. The acoustic wave filter device according to claim 1 , wherein the first parallel-arm resonator and the second parallel-arm resonator are connected in series.

10. The acoustic wave filter device according to claim 1 , wherein the first parallel-arm resonator and the second parallel-arm resonator are connected in series; and

the acoustic wave filter device further includes a switch element connected in parallel to one of the first parallel-arm resonator and the second parallel-arm resonator.

11. The acoustic wave filter device according to claim 1 ,

wherein the IDT electrode in the second parallel-arm resonator has a lower aspect ratio than the IDT electrode in the first parallel-arm resonator, the aspect ratio being a ratio of an overlap width of the plurality of electrode fingers to a number of pairs of electrode fingers in the corresponding IDT electrode.

12. The acoustic wave filter device according to claim 1 , wherein

the series-arm resonant circuit is a series-arm resonator including one or more acoustic wave resonators; and

the series-arm resonant circuit, the first parallel-arm resonator, and the second parallel-arm resonator define a ladder filter structure.

13. The acoustic wave filter device according to claim 1 , wherein the series-arm resonant circuit is a longitudinally coupled resonator including a plurality of acoustic wave resonators.

14. A radio-frequency front-end circuit comprising:

the acoustic wave filter device according to claim 1 ; and

an amplifier circuit connected to the acoustic wave filter device.

15. The radio-frequency front-end circuit according to claim 14 , wherein

the series-arm resonant circuit includes an acoustic wave resonator including an IDT electrode; and

the duty ratio of the IDT electrode in the first parallel-arm resonator is lower than a duty ratio of the IDT electrode in the series-arm resonant circuit.

16. The radio-frequency front-end circuit according to claim 14 , wherein the first parallel-arm resonator and the second parallel-arm resonator are connected in parallel.

17. The radio-frequency front-end circuit according to claim 16 , further comprising:

an impedance element and a switch element that are connected in parallel and that are connected in series with at least one of the first parallel-arm resonator and the second parallel-arm resonator.

18. The radio-frequency front-end circuit according to claim 17 , wherein the impedance element and the switch element that are connected in parallel are connected in series with only the second parallel-arm resonator of the first and second parallel-arm resonators.

19. The radio-frequency front-end circuit according to claim 17 , wherein the impedance element and the switch element that are connected in parallel are connected in series with only the first parallel-arm resonator of the first and second parallel-arm resonators.

20. A communication apparatus comprising:

an RF signal processing circuit that processes a radio-frequency signal transmitted or received by an antenna element; and

the radio-frequency front-end circuit according to claim 14 that transmits the radio-frequency signal between the antenna element and the RF signal processing circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2019
From: NOSAKA, KOJI
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 048419/0947 →
Priority Claims (1)
JP 2016-172176 · Sep 2, 2016 · national
Continuity (2)
Continuation PCTJP2017031267 · Aug 30, 2017
Related Publication 20190190494A1 · Jun 20, 2019
Cited By (2)
US 12,542,535 US 12,732,161