Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate; a first barrier layer containing AlN, over the substrate; a channel layer containing BGaN, over the first barrier layer; and a second barrier layer containing AlN, over the channel layer. A difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.
1. A semiconductor device comprising:
a substrate;
a first barrier layer containing AlN, over the substrate;
a channel layer containing BGaN, over the first barrier layer; and
a second barrier layer containing AlN, over the channel layer,
wherein a difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.
2. The semiconductor device as claimed in claim 1 , wherein the first barrier layer is an AlN layer, and
wherein the channel layer is a BGaN layer whose B composition is greater than or equal to 0.05 and less than or equal to 0.20.
3. The semiconductor device as claimed in claim 1 , wherein the substrate is an AlN substrate.
4. The semiconductor device as claimed in claim 1 , further comprising:
a source electrode, a drain electrode, and a gate electrode, over the channel layer.
5. The semiconductor device as claimed in claim 4 , further comprising:
a first contact layer contacting the channel layer and the source electrode; and
a second contact layer contacting the channel layer and the drain electrode.
6. The semiconductor device as claimed in claim 1 , wherein a thickness of the channel layer is less than or equal to 20 nm.
7. The semiconductor device as claimed in claim 1 , wherein a surface of the first barrier layer is a (0001) surface.
8. The semiconductor device as claimed in claim 1 , wherein a surface of the first barrier layer is a (000-1) surface.
9. An amplifier comprising:
the semiconductor device as claimed in claim 1 .
10. An electric power supply device comprising:
the semiconductor device as claimed in claim 1 .
11. A method of manufacturing a semiconductor device, the method comprising:
forming a first barrier layer containing AlN, over a substrate;
forming a channel layer containing BGaN, over the first barrier layer; and
forming a second barrier layer containing AlN, over the channel layer,
wherein a difference between a first lattice constant of the channel layer and a second lattice constant of the first barrier layer is less than or equal to 1.55% of the second lattice constant.
12. The method of manufacturing the semiconductor device as claimed in claim 11 , wherein the first barrier layer is an AlN layer, and
wherein the channel layer is a BGaN layer whose B composition is greater than or equal to 0.05 and less than or equal to 0.20.
13. The method of manufacturing the semiconductor device as claimed in claim 11 , wherein the substrate is an AlN substrate.
14. The method of manufacturing the semiconductor device as claimed in claim 11 , the method further comprising:
forming a source electrode, a drain electrode, and a gate electrode over the channel layer.
15. The method of manufacturing the semiconductor device as claimed in claim 14 , the method further comprising:
forming a first contact layer contacting the channel layer and the source electrode, and a second contact layer contacting the channel layer and the drain electrode.
16. The method of manufacturing the semiconductor device as claimed in claim 11 , wherein a thickness of the channel layer is less than or equal to 20 nm.
17. The method of manufacturing the semiconductor device as claimed in claim 11 , wherein a surface of the first barrier layer is a (0001) surface.
18. The method of manufacturing the semiconductor device as claimed in claim 11 , wherein a surface of the first barrier layer is a (000-1) surface.