Optoelectronic component and method of producing an optoelectronic component
An optoelectronic component includes a carrier, an optoelectronic arrangement, and a potting material, wherein the optoelectronic arrangement includes an optoelectronic semiconductor chip, the optoelectronic arrangement is arranged above a top side of the carrier, the potting material is arranged above the top side of the carrier such that the optoelectronic arrangement is embedded into the potting material, a radiation emission face of the optoelectronic arrangement is not covered by the potting material, and a surface of the potting material is formed above the radiation emission face in relation to the top side of the carrier.
1. A method of producing an optoelectronic component comprises:
providing a carrier,
arranging an optoelectronic arrangement above a top side of the carrier, wherein the optoelectronic arrangement comprises an optoelectronic semiconductor chip,
arranging a sacrificial body above a radiation emission face of the optoelectronic arrangement,
embedding the optoelectronic arrangement and the sacrificial body into a potting material, wherein a surface of the potting material is formed above the radiation emission face of the optoelectronic arrangement in relation to the top side of the carrier, and
removing the sacrificial body.
2. The method according to claim 1 ,
wherein arranging the optoelectronic arrangement comprises arranging a wavelength-converting material on the optoelectronic semiconductor chip, and
the radiation emission face is constituted of a surface of the wavelength-converting material.
3. The method according to claim 1 , wherein a lamina comprising a photoresist, a salt or a plastic is used as sacrificial body.
4. The method according to claim 1 , wherein arranging the sacrificial body comprises:
arranging a photoresist above the top side of the carrier,
illuminating a section of the photoresist above the radiation emission face, and
removing unilluminated sections of the photoresist, wherein the illuminated section of the photoresist above the radiation emission face remains and constitutes the sacrificial body.
5. The method according to claim 1 , wherein removing the sacrificial body is carried out by dissolving the sacrificial body or subjecting it to plasma asking.
6. The method according to claim 5 , wherein dissolving the sacrificial body is carried out by water, acetone, sodium hydroxide solution or N-methyl-2-pyrrolidone.
7. The method according to claim 1 ,
wherein the sacrificial body is arranged such that a part of the sacrificial body laterally surrounds the radiation emission face, and
removing the sacrificial body produces a cavity between the radiation emission face and the potting material.
8. The method according to claim 7 ,
wherein the sacrificial body comprises a first sacrificial material and a second sacrificial material,
the first sacrificial material is arranged above the radiation emission face, and
the second sacrificial material is arranged such that it laterally surrounds the radiation emission face.
9. The method according to claim 8 ,
wherein, before arranging the first sacrificial material, the second sacrificial material is arranged above the radiation emission face, and
during or after arranging the first sacrificial material, a pressure is exerted on the first sacrificial material, as a result of which a part of the second sacrificial material passes laterally beyond the radiation emission face and flows toward the top side of the carrier such that the second sacrificial material laterally surrounds the radiation emission face.