Semiconductor storage device
A semiconductor storage device includes a base body, a stacked body, a plurality of columns, and a plurality of first contacts. The base body includes a substrate, a semiconductor element on the substrate, a lower wiring layer above the semiconductor element in a thickness direction of the base body and connected to the semiconductor element, and a lower conductive layer above the lower wiring layer in the thickness direction. The stacked body is above the lower conductive layer and including an alternating stack of conductive layers and insulating layers. Each of the columns includes a semiconductor body extending through the stacked body and electrically connected to the lower conductive layer. The plurality of first contacts extend through the stacked body and electrically connected to the lower conductive layer. The lower conductive layer is separately provided under each of the plurality of first contacts.
1. A semiconductor storage device comprising:
a base body including a substrate, a semiconductor element on the substrate, a lower wiring layer above the semiconductor element in a thickness direction of the base body and connected to the semiconductor element, and a lower conductive layer above the lower wiring layer in the thickness direction;
a stacked body above the lower conductive layer and including an alternating stack of a plurality of conductive layers and a plurality of insulating layers that are alternately stacked;
a plurality of columns, each of the columns including a semiconductor body extending through the stacked body in a stack direction of the stacked body and electrically connected to the lower conductive layer, and a memory film having a charge trapping portion between the plurality of conductive layers and the semiconductor body; and
a plurality of first contacts extending through the stacked body into the base body in the stack direction and electrically connected to the lower conductive layer,
wherein the lower conductive layer is separately provided under each of the plurality of first contacts.
2. The semiconductor storage device according to claim 1 , wherein
the plurality of columns are in a cell region of the stacked body, and
the plurality of first contacts are in a tap region of the stacked body.
3. The semiconductor storage device according to claim 1 , wherein the plurality of first contacts are on separate portions of the lower conductive layer, respectively.
4. The semiconductor storage device according to claim 1 , further comprising:
a plurality of second contacts extending through the stacked body into the base body in the stack direction and electrically connected to the lower wiring layer,
wherein the lower conductive layer is not provided around the second contacts.
5. The semiconductor storage device according to claim 4 , further comprising:
an upper conductive layer on the lower conductive layer, wherein
the plurality of first contacts and the plurality of second contacts extend through the upper conductive layer, and
the upper conductive layer is separately provided under each of the plurality of first contacts and each of the plurality of second contacts.
6. The semiconductor storage device according to claim 5 , wherein
the upper conductive layer is a doped polysilicon layer, and
the lower conductive layer is a metal layer or a metal silicide layer.
7. The semiconductor storage device according to claim 5 , wherein
the upper conductive layer and the lower conductive layer are doped polysilicon layers.
8. The semiconductor storage device according to claim 4 , wherein
the plurality of columns are in a cell region of the stacked body, and
the plurality of first contacts and the plurality of second contacts are in a tap region of the stacked body.
9. The semiconductor storage device according to claim 4 , further comprising:
an upper wiring layer above the stacked body and electrically connecting the plurality of second contacts to each other.
10. The semiconductor storage device according to claim 4 , wherein the plurality of second contacts are on the lower wiring layer.
11. A semiconductor storage device comprising:
a base body including a substrate, a semiconductor element on the substrate, a lower wiring layer above the semiconductor element in a thickness direction of the base body and connected to the semiconductor element, and an upper conductive layer above the lower wiring layer in the thickness direction;
a stacked body above the upper conductive layer and including an alternating stack of a plurality of conductive layers and a plurality of insulating layers that are alternately stacked;
a plurality of columns, each of the columns including a semiconductor body extending through the stacked body in a stack direction of the stacked body and electrically connected to the upper conductive layer, and a memory film having a charge trapping portion between the plurality of conductive layers and the semiconductor body; and
a plurality of first contacts extending through the stacked body into the base body in the stack direction and extending through the upper conductive layer, the upper conductive layer being not in contact with the plurality of first contacts,
wherein the upper conductive layer is separately provided around each of the plurality of first contacts.
12. The semiconductor storage device according to claim 11 , wherein
the plurality of columns are in a cell region of the stacked body, and
the plurality of first contacts are in a tap region of the stacked body.
13. The semiconductor storage device according to claim 11 , wherein an insulating film is between the upper conductive layer and each of the plurality of first contacts.
14. The semiconductor storage device according to claim 11 , further comprising:
a plurality of second contacts extending through the stacked body into the base body in the stack direction and through the upper conductive layer, and electrically connected to the lower wiring layer.
15. The semiconductor storage device according to claim 14 , further comprising:
a lower conductive layer below the upper conductive layer, wherein
the lower conductive layer is separately provided under each of the plurality of first contacts, and not provided around each of the plurality of second contacts.
16. The semiconductor storage device according to claim 15 , wherein
the upper conductive layer is a doped polysilicon layer, and
the lower conductive layer is a metal layer or a metal silicide layer.
17. The semiconductor storage device according to claim 15 , wherein
the upper conductive layer and the lower conductive layer are doped polysilicon layers.
18. The semiconductor storage device according to claim 14 , wherein
the plurality of columns are in a cell region of the stacked body, and
the plurality of first contacts and the plurality of second contacts are in a tap region of the stacked body.
19. The semiconductor storage device according to claim 14 , further comprising:
an upper wiring layer above the stacked body and electrically connecting the plurality of second contacts to each other.
20. The semiconductor storage device according to claim 14 , wherein the plurality of second contacts are on the lower wiring layer.