Neuromorphic device driven by copper ion intercalation
A neuromorphic semiconductor device includes a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate. A copper-based electrolyte layer is disposed on the copper-based intercalation channel and a copper-based gate electrode is disposed on the copper-based electrolyte layer.
1. A method of manufacturing a semiconductor device, comprising:
forming a copper-based intercalation channel on an insulative layer, a source contact and a drain contact of a substrate;
forming a copper-based electrolyte layer on the copper-based intercalation channel; and
forming a copper-based gate electrode on the copper-based electrolyte layer.
2. The method of claim 1 , wherein the copper-based intercalation channel comprises at least one of a copper oxide material, a copper sulfide material, a molybdenum sulfide material, a copper selenide material and a copper telluride material.
3. The method of claim 1 , wherein the copper-based electrolyte layer comprises a copper-rubidium-chlorine-iodine material.
4. The method of claim 3 , wherein the copper-rubidium-chlorine-iodine material is Cu 16 Rb 4 Cl 13 I 7 .
5. The method of claim 1 , wherein the copper-based electrolyte layer is a solid electrolyte.
6. The method of claim 1 , wherein the copper-based intercalation channel comprises the same material as the copper-based gate electrode.
7. The method of claim 1 , wherein the copper-based intercalation channel, the copper-based electrolyte layer, and the copper-based gate electrode are configured to transfer copper ions therebetween to tune the semiconductor device.
8. The method of claim 7 , wherein the copper-based intercalation channel has a variable resistivity as a function of copper content.
9. The method of claim 1 , wherein the insulative layer comprises a silicon-based material.
10. A semiconductor device, comprising:
a copper-based intercalation channel disposed on an insulative layer, a source contact and a drain contact of a substrate;
a copper-based electrolyte layer disposed on the copper-based intercalation channel; and
a copper-based gate electrode disposed on the copper-based electrolyte layer.
11. The semiconductor device of claim 10 , wherein the copper-based intercalation channel comprises at least one of copper oxide material, a copper sulfide material, a molybdenum sulfide material, a copper selenide material and a copper telluride material.
12. The semiconductor device of claim 10 , wherein the copper-based electrolyte layer comprises a copper-rubidium-chlorine-iodine material.
13. The semiconductor device of claim 12 , wherein the copper-rubidium-chlorine-iodine material is Cu 16 Rb 4 Cl 13 I 7 .
14. The semiconductor of claim 10 , wherein the copper-based electrolyte layer is a solid electrolyte.
15. The semiconductor device of claim 10 , wherein the copper-based intercalation channel comprises the same material as the copper-based gate electrode.
16. The semiconductor device of claim 10 , wherein the copper-based intercalation channel, the copper-based electrolyte layer, and the copper-based gate electrode are configured to transfer copper ions therebetween to tune the semiconductor device.
17. The semiconductor device of claim 16 , wherein the copper-based intercalation channel has a variable resistivity as a function of copper content.
18. The semiconductor device of claim 10 , wherein the insulative layer comprises a silicon-based material.
19. An analog switching device, comprising:
a source contact and a drain contact disposed on an insulative layer of a substrate;
a copper-based intercalation channel disposed on the insulative layer, the source contact and the drain contact, the copper-based intercalation channel having variable resistivity as a function of copper content;
a copper-based solid electrolyte disposed on the copper-based intercalation channel; and
a copper-based gate electrode disposed on the copper-based solid electrolyte layer, the copper-based gate electrode configured to act as a copper ion reservoir for tuning the analog switching device via intercalation of the copper-based intercalation channel.
20. The analog switching device of claim 19 ,
wherein the copper-based intercalation channel, the copper-based solid electrolyte layer, and the copper-based gate electrode are configured to transfer copper ions therebetween to tune the analog switching device; and
wherein the copper-based intercalation channel has a variable resistivity as a function of copper content.