Method and apparatus for dynamically determining start program voltages for a memory device

1. An apparatus comprising:

a memory comprising a first group of memory cells of a first subblock and a second group of memory cells of a second subblock, wherein the first group of memory cells and the second group of memory cells are coupled to the same wordline; and

a controller comprising circuitry, the controller to:

program one or more pages of data to the first group of memory cells of the first subblock by applying a series of program voltages to the wordline;

determine a start program voltage based on a rate of programming of at least a portion of the first group of memory cells; and

apply the start program voltage to the wordline during a first program pass of a program operation, the program operation to program one or more pages of data to the second group of memory cells of the second subblock.

2. The apparatus of claim 1 , the controller to apply the start program voltage to the wordline during a first program pass of a second program operation, the second program operation to program one or more pages of data to a third group of memory cells of a third subblock.

3. The apparatus of claim 1 , wherein the memory comprises a third group of memory cells of the first subblock and a fourth group of memory cells of the second subblock, and wherein the controller is to:

program one or more pages of data to the third group of memory cells of the first subblock by applying a second series of program voltages to a second wordline;

determine a second start program voltage based on a rate of programming of at least a portion of the third group of memory cells; and

apply the second start program voltage to the second wordline during a first program pass of a second program operation, the second program operation to program one or more pages of data to the fourth group of memory cells of the second subblock.

4. The apparatus of claim 1 , wherein the start program voltage is based at least in part on a program loop count and a program voltage step.

5. The apparatus of claim 1 , the controller to write dynamic start voltage information indicative of the rate of programming of the at least a portion of the first group of memory cells into a plurality of memory cells coupled to the wordline.

6. The apparatus of claim 5 , the controller to:

write the dynamic start voltage information into a volatile memory; and

write the dynamic start voltage information from the volatile memory into the plurality of memory cells coupled to the wordline.

7. The apparatus of claim 1 , the controller to:

determine that dynamic start voltage information indicative of the rate of programming of the at least a portion of the first group of memory cells is not available; and

determine and store the dynamic start voltage information based on the determination that the dynamic start voltage information is not available.

8. The apparatus of claim 7 , wherein the dynamic start voltage information comprises the start program voltage.

9. The apparatus of claim 1 , wherein the memory comprises a page buffer to receive at least a portion of an upper page into a cache in parallel with at least a portion of the first program pass of the program operation.

10. The apparatus of claim 1 , further comprising a battery communicatively coupled to a processor, a display communicatively coupled to the processor, or a network interface communicatively coupled to the processor.

11. The apparatus of claim 1 , wherein the first group of memory cells and the second group of memory cells are non-volatile memory cells.

12. A method comprising:

programming one or more pages of data to a first group of memory cells of a first subblock of a memory by applying a series of program voltages to a wordline;

determining a start program voltage based on a rate of programming of at least a portion of the first group of memory cells; and

applying the start program voltage to the wordline during a first program pass of a program operation, the program operation to program one or more pages of data to a second group of memory cells of a second subblock of the memory.

13. The method of claim 12 , further comprising applying the start program voltage to the wordline during a first program pass of a second program operation, the second program operation to program one or more pages of data to a third group of memory cells of a third subblock of the memory.

14. The method of claim 12 , further comprising:

programming one or more pages of data to a third group of memory cells of the first subblock of the memory by applying a second series of program voltages to a second wordline;

determining a second start program voltage based on a rate of programming of at least a portion of the third group of memory cells; and

applying the second start program voltage to the second wordline during a first program pass of a second program operation, the second program operation to program one or more pages of data to a fourth group of memory cells of the second subblock of the memory.

15. The method of claim 12 , further comprising:

determining that dynamic start voltage information indicative of the rate of programming of the at least a portion of the first group of memory cells is not available; and

determining and storing the dynamic start voltage information based on the determination that the dynamic start voltage information is not available.

16. The method of claim 15 , wherein the dynamic start voltage information comprises the start program voltage.

17. The method of claim 12 , wherein the first group of memory cells and the second group of memory cells are non-volatile memory cells.

18. At least one non-transitory machine readable storage medium comprising:

instructions stored on the medium, the instructions when executed by a machine to cause the machine to:

program one or more pages of data to a first group of memory cells of a first subblock of a memory by applying a series of program voltages to a wordline;

determine a start program voltage based on a rate of programming of at least a portion of the first group of memory cells; and

apply the start program voltage to the wordline during a first program pass of a program operation, the program operation to program one or more pages of data to a second group of memory cells of a second subblock of the memory.

19. The at least one medium of claim 18 , the instructions when executed to cause the machine to apply the start program voltage to the wordline during a first program pass of a second program operation, the second program operation to program one or more pages of data to a third group of memory cells of a third subblock of the memory.

20. The at least one medium of claim 18 , the instructions when executed to cause the machine to:

program one or more pages of data to a third group of memory cells of the first subblock of the memory by applying a second series of program voltages to a second wordline;

determining a second start program voltage based on a rate of programming of at least a portion of the third group of memory cells; and

apply the second start program voltage to the second wordline during a first program pass of a second program operation, the second program operation to program one or more pages of data to a fourth group of memory cells of the second subblock of the memory.