Three-dimensional image sensor based on time of flight and electronic apparatus including the image sensor

1. A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor, comprising:

at least two first photogates symmetrically arranged in a central portion of a pixel;

at least two first gates configured to remove an overflow charge generated in the at least two first photogates, wherein the at least two first gates are arranged symmetrically in an outer portion of the pixel and are spaced apart from the at least two first photogates in a plan view; and

a first gate group comprising a plurality of gates configured to store and transmit charges generated in the at least two first photogates, wherein the first gate group is arranged in the outer portion of the pixel.

2. The ToF-based 3D image sensor of claim 1 , wherein the pixel has a 2-tap pixel structure comprising two first photogates or a 4-tap pixel structure comprising four first photogates,

the two first photogates and two first gates of the at least two first gates are symmetrically arranged about a straight line passing through a center of the pixel when the pixel has the 2-tap pixel structure, and

the four first photogates and four first gates of the at least two first gates are symmetrically arranged about the center of the pixel when the pixel has the 4-tap pixel structure.

3. The ToF-based 3D image sensor of claim 1 , wherein a charge storage structure is arranged between the at least two first photogates and a floating diffusion (FD) region.

4. The ToF-based 3D image sensor of claim 3 ,

wherein the charge storage structure comprises a storage diode structure, a storage gate structure, or a combined structure comprising a storage diode and a storage gate,

wherein the storage diode is formed under the storage gate in the combined structure.

5. The ToF-based 3D image sensor of claim 1 , further comprising:

a second photogate arranged in the central portion of the pixel between the at least two first photogates.

6. The ToF-based 3D image sensor of claim 5 , wherein a middle voltage between a high voltage and a low voltage applied to at least one of the at least two first photogates is applied to the second photogate, or

an n-type or p-type doping region is formed under the second photogate, and the low voltage or the high voltage is applied to the second photogate.

7. The ToF-based 3D image sensor of claim 1 , wherein the pixel has a 4-tap pixel structure comprising four first photogates,

the four first photogates are respectively arranged in four quadrants that are divided by an x-axis and a y-axis, and

four first gates of the at least two first gates are each arranged between two quadrants outside the first photogates.

8. The ToF-based 3D image sensor of claim 1 , wherein the pixel has a 2-tap pixel structure comprising the at least two first photogates,

the at least two first photogates are arranged on both sides of a straight line passing through a center of the pixel, and

the at least two first gates are respectively arranged above and below the at least two first photogates between the at least two first photogates in the outer portion of the pixel.

9. The ToF-based 3D image sensor of claim 8 , further comprising:

at least one second photogate arranged in the central portion of the pixel between the at least two first photogates.

10. A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor, comprising:

at least two photogates symmetrically arranged in a central portion of a pixel;

a first gate configured to remove an overflow charge generated in the at least two photogates, wherein the first gate is surrounded by the at least two photogates, is arranged as a symmetrical structure in the central portion of the pixel, and is spaced apart from the at least two photogates in a plan view; and

a gate group comprising a plurality of gates configured to store and transmit charges generated in the at least two photogates, wherein the gate group is arranged in an outer portion of the pixel.

11. The ToF-based 3D image sensor of claim 10 , wherein the pixel has a 2-tap pixel structure comprising two photogates or a 4-tap pixel structure comprising four photogates,

the two photogates are symmetrically arranged about a straight line passing through a center of the pixel when the pixel has the 2-tap pixel structure, and

the four photogates are symmetrically arranged about the center of the pixel when the pixel has the 4-tap pixel structure.

12. The ToF-based 3D image sensor of claim 10 , wherein the pixel has a 4-tap pixel structure comprising four photogates,

the four photogates are respectively arranged in four quadrants that are divided by an x-axis and a y-axis,

the first gate is arranged in a center of the pixel and surrounded by the four photogates, and

the gate group is arranged in a quadrant in which a corresponding photogate is arranged, or is shared by the photogates of four pixels adjacent to a floating diffusion (FD) region that is surrounded by the four pixels.

13. The ToF-based 3D image sensor of claim 10 , wherein the pixel has a 2-tap pixel structure comprising the at least two photogates,

the at least two photogates are arranged on both sides of a straight line passing through a center of the pixel,

the first gate is arranged in the center of the pixel and surrounded by the at least two photogates, and

the gate group is arranged adjacent to a corresponding photogate or arranged around a floating diffusion (FD) region arranged between two pixels, and the gate group is shared between the photogates of the two pixels adjacent to the FD region.

14. A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor, comprising:

at least two first photogates symmetrically arranged in a central portion of a pixel;

a first gate configured to emit an overflow charge generated in the at least two first photogates, wherein the first gate is arranged as a symmetrical structure in the central portion or an outer portion of the pixel, and the first gate is spaced apart from the at least two first photogates in a plan view; and

a gate group comprising a plurality of gates configured to store and transmit charges generated in the at least two first photogates, wherein the gate group is arranged in the outer portion of the pixel.

15. The ToF-based 3D image sensor of claim 14 , wherein the first gate is arranged in the central portion of the pixel, or the first gate and at least one additional first gate are arranged in the outer portion of the pixel.

16. The ToF-based 3D image sensor of claim 14 , wherein the pixel has a 2-tap pixel structure comprising two first photogates,

the first gate and an additional first gate are arranged in the outer portion of the pixel between the two first photogates, or the first gate is arranged in a center of the pixel and surrounded by the two first photogates, and

the ToF-based 3D image sensor further comprises at least one second photogate arranged in the central portion of the pixel between the two first photogates when the first gate and the additional first gate are arranged in the outer portion of the pixel.

17. The ToF-based 3D image sensor of claim 16 , wherein the gate group is arranged adjacent to a corresponding first photogate or arranged around a floating diffusion (FD) region arranged between two pixels, and the gate group is shared between the first photogates of the two pixels adjacent to the FD region.

18. The ToF-based 3D image sensor of claim 14 , wherein the pixel has a 4-tap pixel structure comprising four first photogates,

the four first photogates are respectively arranged in four quadrants that are divided by an x-axis and a y-axis,

the first gate and three additional first gates are each arranged between two quadrants in the outer portion of the pixel, or the first gate is arranged in a center of the pixel and surrounded by the four first photogates, and

the ToF-based 3D image sensor further comprises a second photogate arranged in the central portion of the pixel between the at least two first photogates when the first gate and the three additional first gates are arranged in the outer portion of the pixel.

19. The ToF-based 3D image sensor of claim 18 , wherein the gate group is arranged in a quadrant in which a corresponding first photogate is arranged, or shared among first photogates of four pixels adjacent to a floating diffusion (FD) region that is surrounded by the four pixels.

20. The ToF-based 3D image sensor of claim 14 , wherein a charge storage structure is arranged between the at least two first photogates and a floating diffusion (FD) region,

wherein the charge storage structure comprises a storage diode structure, a storage gate structure, or a combined structure comprising a storage diode and a storage gate.