Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces
High voltage tolerant electrical overstress protection with low leakage current and low capacitance is provided. In one embodiment, a semiconductor die includes a signal pad, an internal circuit electrically connected to the signal pad, a power clamp electrically connected to an isolated node, and one or more isolation blocking voltage devices electrically connected between the signal pad and the isolated node. The one or more isolation blocking voltage devices are operable to isolate the signal pad from a capacitance of the power clamp. In another embodiment, a semiconductor die includes a signal pad, a ground pad, a high voltage/high speed internal circuit electrically connected to the signal pad, and a first thyristor and a second thyristor between the signal pad and the ground pad.
1. A semiconductor die with low leakage current and high voltage tolerant electrical overstress protection, the semiconductor die comprising:
a signal pad;
an internal circuit electrically connected to the signal pad;
a power clamp electrically connected between an isolated node and a reference node;
one or more isolation blocking voltage devices electrically connected between the signal pad and the isolated node, wherein the one or more isolation blocking voltage devices are operable to isolate the signal pad from a capacitance of the power clamp;
a clamp bypass diode connected in parallel with the power clamp and having an anode coupled to the reference node and a cathode coupled to the isolated node; and
a first reverse diode having an anode coupled to the isolated node and a cathode coupled to the signal pad.
2. The semiconductor die of claim 1 , wherein the one or more isolation blocking voltage devices include at least one gated diode.
3. The semiconductor die of claim 2 , wherein the at least one gated diode comprises a semiconductor region, a p-type active (P+) anode region formed in the semiconductor region, an n-type active (N+) cathode region formed in the semiconductor region, and a metal gate over the semiconductor region between the P+ anode region and the N+ cathode region.
4. The semiconductor die of claim 2 , wherein the at least one gated diode comprises an n-type well, a P+ anode region formed in the n-type well, an N+ cathode region formed in the n-type well, a metal gate over the n-type well between the P+ anode region and the N+ cathode region, and a P+ ring surrounding a perimeter of the n-type well.
5. The semiconductor die of claim 2 , wherein the at least one gated diode comprises a p-type well, an n-type tub formed in a p-type substrate and operable to electrically isolate the p-type well from the p-type substrate, a P+ anode region formed in the p-type well, an N+ cathode region formed in the p-type well, and a metal gate over the p-type well between the P+ anode region and the N+ cathode region.
6. The semiconductor die of claim 1 , wherein the one or more isolation blocking voltage devices includes at least two isolation diodes in series.
7. The semiconductor die of claim 1 , wherein the power clamp is actively-controlled.
8. The semiconductor die of claim 7 , wherein the power clamp comprises a detection circuit, a bias circuit, and a clamp, wherein the detection circuit activates a detection signal in response to detecting an electrical overstress event at the isolated node, and wherein the bias circuit turns on the clamp in response to activation of the detection signal.
9. The semiconductor die of claim 8 , wherein the clamp includes a first clamp field-effect transistor (FET) and a second clamp FET connected in series between the isolated node and the reference node.
10. The semiconductor die of claim 9 , wherein the bias circuit further includes a voltage divider connected between the isolated node and the reference node and configured to provide a mid voltage to a gate of the first clamp FET, wherein the bias circuit is configured to override the mid voltage in response to activation of the detection signal.
11. The semiconductor die of claim 1 , wherein the signal pad is a consumer electronics control (CEC) pad of a high definition multimedia interface (HDMI).
12. The semiconductor die of claim 1 , wherein the power clamp is configured to activate in response to electrical overstress that increases a voltage of the signal pad, wherein the semiconductor die further comprises a reverse protection circuit electrically connected to the signal pad and configured to activate in response to electrical overstress that decreases the voltage of the signal pad.
13. The semiconductor die of claim 12 , wherein the reverse protection circuit includes at least one of a diode or an SCR.
14. The semiconductor die of claim 12 , wherein the reverse protection circuit includes two or more gated diodes in series.
15. The semiconductor die of claim 1 , further comprising a second reverse diode having an anode coupled to the cathode of the first reverse protection diode and a cathode coupled to the signal pad.
16. The semiconductor die of claim 1 , wherein the one or more isolation blocking voltage devices comprises a gated diode having an anode region coupled to the isolated node and a cathode region coupled to the signal pad, wherein the anode region and the cathode region are formed in a semiconductor layout, and wherein the anode region is contacted at a first corner of the semiconductor layout and the cathode region is contacted at a second corner of the semiconductor layout opposite the first corner.
17. A method of providing electrical overstress protection with low capacitance and low leakage current, the method comprising:
receiving an electrical overstress event at a signal pad of a semiconductor die;
discharging the electrical overstress event using a power clamp that is electrically connected between an isolated node and a reference node;
isolating the signal pad from a capacitance of the power clamp using at least one blocking voltage device interposed between the signal pad and the isolated node; and
providing a bypass path for the power clamp using a clamp bypass diode and a first reverse diode, the clamp bypass diode connected in parallel with the power clamp and having an anode coupled to the reference node and a cathode coupled to the isolated node, and the first reverse diode having an anode coupled to the isolated node and a cathode coupled to the signal pad.
18. The method of claim 17 , wherein isolating the signal pad from the capacitance of the power clamp includes providing isolation using at least one gated diode.
19. The method of claim 17 , wherein discharging the electrical overstress event using the power clamp includes activating a detection signal in response to detecting the electrical overstress event at the isolated node, and turning on a clamp in response to activation of the detection signal.
20. The method of claim 17 , further comprising protecting the signal using a reverse protection circuit including two or more gated diodes in series.