IP Library Granted Patent US 10,509,523
Granted Patent B2
US 10,509,523 · App. 16/291,509 · Granted Dec 17, 2019

Methods and apparatus for a capacitive pressure sensor

Inventors: Takayasu Otagaki (Ota, JP); Kensuke Goto (Ashikaga, JP)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
G06F3/044G06F3/0414G06F3/0416H03K17/955H03K17/962H03K17/975G06F2203/04103G06F2203/04105H03K2217/9651
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Quick Facts
Patent No.
US 10,509,523
App. No.
16/291,509
Granted
Dec 17, 2019
Kind
B2
Abstract

Various embodiments of the present technology may provide methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may include a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.

Claims (68)

1. A capacitive sensor, comprising:

a first substrate, having a first surface; and

a second substrate, having a first surface directly adjacent to the first surface of the first substrate, comprising:

a capacitor comprising:

a first electrode; and

a second electrode positioned substantially coplanar with the first electrode;

wherein the first electrode and the second electrode form a capacitance;

wherein at least one of the first substrate and the second substrate is capable of deforming in response to an applied first pressure to produce a first change in the capacitance and the first and second substrates deform under the applied first pressure to create a gap between at least a portion of the first and second substrates.

2. The capacitive sensor according to claim 1 , wherein the first and second substrates are configured to deform when the first pressure is applied to a second surface of the first substrate.

3. The capacitive sensor according to claim 1 , wherein the first and second substrates are configured to deform when the first pressure is applied to a second surface of the second substrate.

4. The capacitive sensor according to claim 1 , wherein:

the first substrate maintains its shape under an applied second pressure;

the second substrate maintain its shape under the applied second pressure; and

the applied second pressure produces a second change in the capacitance.

5. The capacitive sensor according to claim 1 , wherein the first and second substrates are arranged in a vertically-stacked orientation.

6. The capacitive sensor according to claim 1 , wherein:

the second electrode is nested within an interior region formed by the first electrode; and

the first and second electrodes are separated by a gap.

7. The capacitive sensor according to claim 1 , wherein the first substrate, comprises:

a flexible portion disposed along an outer edge of the capacitive sensor; and

a rigid portion within an interior region formed by the flexible portion; and

wherein the rigid and flexible portions are coplanar with each other.

8. A method for detecting an applied pressure, comprising:

providing a capacitive sensor comprising:

a first substrate; and

a second substrate abutting the first substrate;

wherein:

the second substrate comprises a first electrode coplanar with a second electrode;

the first and second electrodes form a capacitance; and

at least one of the first substrate and second substrate is capable of deforming in response to the applied pressure;

generating an electric field between the first and second electrodes;

measuring a change in the capacitance of the capacitive sensor; and

utilizing the measured change in the capacitance to determine:

an applied first pressure; and

an applied second pressure.

9. The method according to claim 8 , wherein the second electrode is nested within a region defined by the first electrode.

10. The method according to claim 8 , wherein utilizing the measured change in capacitance to determine the first and second applied pressures comprises:

converting the change in capacitance to a digital value;

comparing the digital value to a first threshold;

generating a first signal based on the comparison of the digital value to the first threshold, wherein the first signal indicates the first applied pressure;

comparing the digital value to a second threshold; and

generating a second signal based on the comparison of the digital value to the second threshold, wherein the second signal indicates the second applied pressure.

11. The method according to claim 8 , wherein:

the applied first pressure corresponds to zero change in distance between the first and second substrates; and

the applied second pressure corresponds to a change in distance between the first and second substrates that is greater than zero.

12. The method according to claim 8 , wherein the second pressure is greater than 861 Pascals.

13. The method according to claim 8 , wherein the first and second substrates are arranged in a vertically-stacked orientation.

14. A capacitive sensor, comprising:

a first substrate, having a first surface; and

a second substrate, having a first surface adjacent to the first surface of the first substrate, comprising:

a capacitor comprising:

a first electrode; and

a second electrode positioned substantially coplanar with the first electrode;

wherein the first electrode and the second electrode form an intentional capacitance, at most, with each other;

wherein:

a first gap is disposed between the first and second substrates;

the second substrate deforms under a first applied pressure to a second surface of the second substrate and reduces at least a portion of the first gap between the first and second substrates; and

the first substrate maintains its shape under the applied pressure.

15. The capacitive sensor according to claim 14 , wherein the first and second substrates are arranged in a vertically-stacked orientation.

16. The capacitive sensor according to claim 14 , wherein:

the second electrode is nested within an interior region formed by the first electrode; and

the first and second electrodes are separated by a second gap.

17. The capacitive sensor according to claim 14 , wherein the first gap is filled with air.

18. The capacitive sensor according to claim 14 , wherein the first gap is filled with one of: a liquid, a gel, and a foam.

19. The capacitive sensor according to claim 14 , wherein the first substrate comprises:

a flexible portion disposed along an outer edge of the capacitive sensor; and

a rigid portion within an interior region formed by the flexible portion; and

wherein the rigid and flexible portions are coplanar with each other.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL 049473, FRAME 0932 Recorded Aug 17, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064618/0721 →
SECURITY INTEREST Recorded Jun 14, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 049473/0932 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2019
From: OTAGAKI, TAKAYASU; GOTO, KENSUKE
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 048494/0432 →