Gate noble metal nanoparticles
An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. The gate includes noble metal nanoparticles. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region.
1. A method, comprising:
forming a memory access device by forming an opening in a substrate;
forming a dielectric material in the opening;
forming a first gate material in the opening; and
forming nanoparticles on the first gate material to form a gate of the memory access device.
2. The method of claim 1 , further comprising forming the nanoparticles to have a diameter in a range of 0.5 nanometer (nm) to 3 nm.
3. The method of claim 1 , further comprising forming the nanoparticles out of platinum.
4. The method of claim 1 , further comprising forming the nanoparticles out of molybdenum.
5. The method of claim 1 , further comprising forming the first gate material over the nanoparticles to form a material having a tunable threshold voltage.
6. The method of claim 1 , further comprising forming a second gate material over the first conductive material.
7. A method, comprising:
forming a buried recessed access device (BRAD) by forming an opening in a substrate structure;
conformally depositing a gate dielectric into the opening;
depositing polysilicon on the gate dielectric in the opening; and
depositing noble metal nanoparticles on the polysilicon to form a gate of the BRAD.
8. The method of claim 7 , further comprising using chemical vapor deposition to deposit the noble metal nanoparticles.
9. The method of claim 7 , further comprising depositing polysilicon on the noble metal nanoparticles to form polysilicon encapsulated noble metal nanoparticles and to fill the opening.
10. The method of claim 9 , further comprising forming the polysilicon encapsulated noble metal nanoparticles to have a work function in a range of 5.0 Joules (J) to 5.4 J.
11. The method of claim 9 , further comprising removing a portion of the polysilicon from the opening.
12. The method of claim 9 , wherein removing a portion of the polysilicon from the opening includes having a remaining portion of the polysilicon encapsulated noble metal nanoparticles with height in a range of 5 nm to 30 nm.
13. The method of claim 11 , further comprising depositing a second gate material on the polysilicon encapsulated noble metal nanoparticles to form a hybrid metal gate.
14. The method of claim 13 , further comprising forming the second gate material to have a work function in a range of 4.5 J to 5.0 J.