Method of manufacturing semiconductor device having higher exhaust pipe temperature and non-transitory computer-readable recording medium
According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.
1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle comprises sequentially performing:
(a) supplying a source gas to the substrate accommodated in a reaction tube;
(b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube;
(c) supplying a reactive gas to the substrate exposed previously to the source gas;
(d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe; and
(e) adjusting an inner pressure of the exhaust pipe to atmospheric pressure in a state where a temperature of the exhaust pipe is lowered from a second temperature to a first temperature equal to or higher than 55° C. and equal to or lower than 130° C. after the film is formed on the substrate,
wherein at least in (a) and (c), a temperature of the reaction tube is set to the first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas, the temperature of the exhaust pipe is set to the second temperature equal to or higher than the first temperature, and the reaction tube is depressurized in (a) through (d).
2. The method of claim 1 , wherein the second temperature is set to be equal to or lower than 130° C.
3. The method of claim 1 , wherein the second temperature is set to be higher than the first temperature.
4. The method of claim 3 , wherein the temperature of the exhaust pipe is set to the second temperature in (b) and (d).
5. The method of claim 3 , wherein the temperature of the exhaust pipe in (a) through (d) is adjusted according to the inner pressure of the exhaust pipe in (a) through (d), respectively.
6. The method of claim 1 , wherein the temperature of the exhaust pipe is maintained at the second temperature in (a) through (d).
7. The method of claim 1 , wherein the source gas is supplied into the reaction tube through a source gas supply pipe and the reactive gas is supplied into the reaction tube through a reactive gas supply pipe, and a temperature of a connection portion of the source gas supply pipe whereat the source gas supply pipe is connected to the reaction tube and a temperature of a connection portion of the reactive gas supply pipe whereat the reactive gas supply pipe is connected to the reaction tube are set to the first temperature.
8. The method of claim 7 , wherein the temperature of the source gas supply pipe is set to become lower in proportion to a distance between the reaction tube and the connection portion of the source gas supply pipe and the temperature of the reactive gas supply pipe is set to become lower in proportion to a distance between the reaction tube and the connection portion of the reactive gas supply pipe.
9. The method of claim 1 , wherein the temperature of the exhaust pipe is set to be equal to the first temperature in (a) and (c), and the temperature of the exhaust pipe is set to be higher than the first temperature in (b) and (d) so as to reduce the inner pressure of the exhaust pipe.
10. The method of claim 1 , wherein the second temperature of the exhaust pipe has a temperature variation rate such that the second temperature of the exhaust pipe varies in proportion to a distance from a connection portion of the exhaust pipe whereat the exhaust pipe is connected to the reaction tube.
11. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle comprises sequentially performing:
(a) supplying a source gas to the substrate accommodated in a reaction tube;
(b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube;
(c) supplying a reactive gas to the substrate exposed previously to the source gas;
(d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe; and
(e) adjusting an inner pressure of the exhaust pipe to atmospheric pressure in a state where a temperature of the exhaust pipe is lowered from a second temperature to a first temperature equal to or higher than 55° C. and equal to or lower than 250° C. after the film is formed on the substrate,
wherein at least in (a) and (c), a temperature of the reaction tube is set to the first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas, the temperature of the exhaust pipe is set to the second temperature equal to or higher than the first temperature, and the reaction tube is depressurized in (a) through (d).
12. The non-transitory computer-readable recording medium of claim 11 , wherein the first temperature is set to be within a range from 55° C. to the second temperature, and the second temperature is set to be equal to or lower than 130° C.