Solid-state imaging sensor
The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.
1. A solid-state imaging sensor, comprising:
a plurality of pixel units;
a substrate including a plurality of photoelectric conversion units;
a first layer including a plurality of concave portions, the first layer disposed over the photoelectric conversion units in a cross sectional view;
a second layer disposed on the first layer; and
a third layer disposed on the second layer;
wherein, for each of the concave portions, an upper width is larger than a bottom width in the cross sectional view,
wherein each of the pixel units includes at least one photoelectric conversion unit and at least first concave on and second concave portions for the at least one photoelectric conversion unit,
wherein the second concave portion is adjacent to the first concave portion in a width direction of the concave portions, and
wherein an interface between the first layer and the second layer includes a flat portion disposed between the first concave portion and the second concave portion.
2. The solid-state imaging sensor according to claim 1 , wherein the substrate includes a first material, wherein the first layer includes the first material and a second material, wherein the second layer includes the second material, and wherein the third layer includes a third material.
3. The solid-state imaging sensor according to claim 2 , wherein the plurality of the concave portions includes the second material.
4. The solid-state imaging sensor according to claim 1 , further including a trench disposed between the plurality of pixel units.
5. The solid-state imaging sensor according to claim 4 , wherein the trench includes the same material as that of the second layer.
6. The solid-state imaging sensor according to claim 4 , further including a light shielding film disposed over the trench.
7. A solid-state imaging sensor, comprising:
a plurality of pixel units;
a first layer including a plurality of photoelectric conversion units;
a second layer including a plurality of concave portions, the second layer formed disposed over the first layer in a cross sectional view;
a third layer disposed on the second layer; and
a fourth layer disposed on the third layer,
wherein for each of the concave portions an upper width is larger than a bottom width in the cross sectional view,
wherein each of the pixel units includes at least one photoelectric conversion unit and at least first and second concave portions for the at least one photoelectric conversion unit,
wherein the second concave portion is adjacent to the first concave portion in a width direction of the concave portions, and
wherein an interface between the second layer and the third layer includes a flat portion disposed between the first concave portion and the second concave portion.
8. The solid-state imaging sensor according to claim 7 , wherein the first layer includes a first material, wherein the second layer includes the first material and a second material, wherein the third layer includes the second material, and wherein the fourth layer includes a third material.
9. The solid-state imaging sensor according to claim 8 , wherein the plurality of the concave portions includes the second material.
10. The solid-state imaging sensor according to claim 8 , wherein a refractive index of the first material is higher than a refractive index of the second material, and the refractive index of the second material is higher than a refractive index of the third material.
11. The solid-state imaging sensor according to claim 7 , further including a trench disposed between the plurality of pixel units.
12. The solid-state imaging sensor according to claim 11 , wherein the trench includes the same material as that of the second layer.
13. The solid-state imaging sensor according to claim 11 , further including a light shielding film disposed over the trench.
14. A solid-state imaging sensor, comprising:
a plurality of pixel units;
a trench disposed between the plurality of pixel units;
a substrate including:
a plurality of photoelectric conversion units;
a plurality of concave portions at a light incident side of the substrate; wherein more than one concave portion in the plurality of concave portions is directly disposed over each of the plurality of photoelectric conversion units; and
a flat portion at the light incident side of the substrate, the flat portion disposed between the plurality of concave portions; and
a first layer disposed on the substrate, the first layer including a convex portion at a part corresponded to the concave portion,
wherein the trench includes the same material as that of the first layer, and
wherein an upper width of the concave portion is larger than a bottom width of the concave portion in the cross sectional view.
15. The solid-state imaging sensor according to claim 14 , wherein the substrate includes a first material, and wherein the first layer includes a second material.
16. The solid-state imaging sensor according to claim 15 , wherein a refractive index of the first material is higher than a refractive index of the second material.
17. The solid-state imaging sensor according to claim 15 , further including a second layer disposed on the first layer, wherein the second layer includes a third material.
18. The solid-state imaging sensor according to claim 17 , wherein a refractive index of the second material is higher than a refractive index of the third material.
19. The solid-state imaging sensor according to claim 14 , further including a light shielding film disposed over the trench.
20. A solid-state imaging sensor, comprising a substrate including:
a plurality of pixel units, each of the pixel units including a plurality of photoelectric conversion units; and
a plurality of concavo-convex structures, wherein a plurality of concavo-convex structures are disposed over each of the photoelectric conversion units, wherein the concavo-convex structures are formed on a light incident side of the substrate, and
wherein the concavo-convex structures form a lattice structure in each of the photoelectric conversion units in a plan view.
21. The solid-state imaging sensor according to claim 20 , wherein the concavo-convex portion includes a plurality of flat portions and a plurality of concave portions in a cross sectional view, and wherein the flat portion and the concave portion are alternately arranged.
22. The solid-state imaging sensor according to claim 20 , further comprising a trench disposed between the pixel units.
23. The solid-state imaging sensor according to claim 22 , wherein a depth of the trench from a surface of the substrate is deeper than a depth of the concave portion from the surface of the substrate.