Semiconductor device, manufacturing method, solid state image sensor, and electronic equipment
The present disclosure relates to a semiconductor device, a manufacturing method, a solid state image sensor, and electronic equipment that can achieve further improvement in reliability. Connection pads are formed in interlayer films provided respectively in interconnection layers of a sensor substrate on which a sensor surface having pixels is formed and a signal processing substrate configured to perform signal processing on the sensor substrate to make an electrical connection between the sensor substrate and the signal processing substrate. Then, a metal oxide film is formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connection pad formed on a side toward the sensor substrate and the interlayer film on a side toward the signal processing substrate, and between the connection pad formed on the side toward the signal processing substrate and the interlayer film on the side toward the sensor substrate. The present technology can be applied to a laminated-type CMOS image sensor, for example.
1. A semiconductor device comprising:
a sensor substrate including a photodiode, a transistor, and a first wiring layer; and
a circuit substrate including a signal processing circuit and a second wiring layer, the sensor substrate being stacked on the circuit substrate,
wherein the first wiring layer includes a first connection pad and a first insulating film,
wherein the second wiring layer includes a second connection pad and a second insulating film,
wherein the first connection pad and the second connection pad are disposed in a peripheral region other than a pixel region that includes the photodiode,
wherein the first connection pad is covered by a first barrier metal on a side of the first connection pad furthest from the second insulating film,
wherein the second connection pad is covered by a second barrier metal on a side of the second connection pad furthest from the first insulating film,
wherein a first portion of the first barrier metal contacts a first portion of the second connection pad,
wherein a first portion of the first connection pad contacts a second portion of the second connection pad,
wherein a second portion of the first connection pad contacts a first portion of a barrier film,
wherein a second portion of the first barrier metal contacts a second portion of the barrier film, and
wherein the first portion of the first barrier metal and the second portion of the first barrier metal are on opposite sides of the first connection pad.
2. The semiconductor device according to claim 1 , wherein, in a cross sectional view, a third portion of the barrier film is disposed between and contacts a first portion of the first insulating film and a first portion of the second insulating film.
3. The semiconductor device according to claim 2 , wherein the barrier film includes an insulator.
4. The semiconductor device according to claim 2 , wherein the peripheral region surrounds the pixel region.
5. The semiconductor device according to claim 2 , wherein the first and second connection pads are rectangular in the cross sectional view.
6. The semiconductor device according to claim 2 , wherein the barrier film has a thickness ranging from 0.1 nm to 10 nm.
7. The semiconductor device according to claim 2 , wherein the first barrier metal covers three sides of the first connection pad in the cross sectional view.
8. The semiconductor device according to claim 2 , wherein the second barrier metal covers three sides of the second connection pad in the cross sectional view.
9. A light detecting device, comprising:
a sensor substrate including a photodiode, a transistor, and a first wiring layer; and
a circuit substrate including a signal processing circuit and a second wiring layer,
wherein the sensor substrate is stacked on the circuit substrate,
wherein the first wiring layer includes a first connection pad and a first insulating film,
wherein the second wiring layer includes a second connection pad and a second insulating film,
wherein the first connection pad and the second connection pad are disposed in a peripheral region other than a pixel region that includes the photodiode,
wherein the first connection pad is covered by a first barrier metal on a side of the first connection pad furthest from the second insulating film,
wherein the second connection pad is covered by a second barrier metal on a side of the second connection pad furthest from the first insulating film,
wherein a first portion of the first barrier metal contacts a first portion of the second connection pad,
wherein a first portion of the first connection pad contacts a second portion of the second connection pad,
wherein a second portion of the first connection pad contacts a first portion of a barrier film,
wherein a second portion of the first barrier metal contacts a second portion of the barrier film, and
wherein the first portion of the first barrier metal and the second portion of the first barrier metal are on opposite sides of the first connection pad.