Light-emitting device
A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.
1. A light-emitting device comprising:
a top side for emitting light, a bottom side opposite to the top side, a front side, and a rear side opposite to the front side;
a light-emitting chip;
a wavelength conversion layer covering the light-emitting chip and formed at the top side;
a conductive layer having a first external electrode layer formed at the front side and a second external electrode layer formed at the rear side;
a reflective layer surrounding the light-emitting chip and formed at the front side, the rear side, and the top side to expose the wavelength conversion layer at the top side; and
a third external electrode layer formed at the front side and coplanar with the first external electrode layer,
wherein the first external electrode layer has a non-rectangular shape.
2. The light-emitting device of claim 1 , wherein the reflective layer is arranged to cover the light-emitting chip and form at the bottom side.
3. The light-emitting device of claim 1 , wherein the reflective layer is arranged to cover the conductive layer and expose the first external electrode layer and the second external electrode layer.
4. The light-emitting device of claim 1 , wherein the first external electrode layer and the reflective layer are coplanar with each other at the front side.
5. The light-emitting device of claim 1 , wherein the conductive layer has a portion extending from the first external electrode layer to the second external electrode layer.
6. The light-emitting device of claim 5 , wherein the portion is embedded in the reflective layer.
7. The light-emitting device of claim 1 , further comprising a front surface at the front side, wherein the front surface is constructed by the reflective layer and the first external electrode layer.
8. The light-emitting device of claim 1 , further comprising a bottom surface at the bottom side, wherein the bottom surface is merely constructed by the reflective layer.
9. The light-emitting device of claim 8 , wherein the first external electrode layer has an inclined side not parallel with the bottom surface.
10. The light-emitting device of claim 1 , wherein the first external electrode layer is surrounded by the reflective layer from a view of the front side.
11. The light-emitting device of claim 1 , wherein the wavelength conversion layer directly contacts the light-emitting chip.
12. The light-emitting device of claim 1 , wherein the wavelength conversion layer has an area larger than that of the light-emitting chip from a view of the top side.
13. The light-emitting device of claim 1 , wherein the third external electrode layer has a shape which is the same as or different from that of the first external electrode layer.
14. The light-emitting device of claim 1 , further comprising a height from the rear side to the front side not greater than 0.3 mm.
15. The light-emitting device of claim 1 , wherein the light-emitting chip comprises two internal electrode layers formed on the bottom side.
16. The light-emitting device of claim 1 , wherein the reflective layer comprises titanium dioxide.
17. The light-emitting device of claim 1 , wherein the conductive layer is a solder paste.
18. A backlight module comprising:
the light-emitting device of claim 1 ; and
a board disposed to connect to the first external electrode layer and the second external electrode layer.
19. The backlight module of claim 18 , wherein the light-emitting device has a main light-emitting direction parallel to a surface of the board.