IP Library Granted Patent US 10,864,096
Granted Patent B2
US 10,864,096 · App. 16/298,758 · Granted Dec 15, 2020

Three-dimensional thin-film nitinol devices

Inventors: Alfred David Johnson (San Leandro, CA); Colin Kealey (Los Angeles, CA)
Assignee: MONARCH BIOSCIENCES, INC.
A61F2/90A61F2/844A61F2/86A61L31/088C23C14/0005C23C14/042C23C14/165C23C14/34C23C14/5846A61F2/06A61F2002/068A61F2002/823A61F2210/0014A61F2210/0076A61F2230/0017A61F2230/0069A61F2240/001B81C1/00476C23F1/44
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Quick Facts
Patent No.
US 10,864,096
App. No.
16/298,758
Granted
Dec 15, 2020
Kind
B2
Abstract

A method of manufacturing three-dimensional thin-film nitinol (NiTi) devices includes: depositing multiple layers of nitinol and sacrificial material on a substrate. A three-dimensional thin-film nitinol device may include a first layer of nitinol and a second layer of nitinol bonded to the first layer at an area masked and not covered by the sacrificial material during deposition of the second layer.

Claims (14)

1. A method comprising:

deep reactive ion etching a pattern of grooves on a surface of a semiconductor substrate, the grooves corresponding to fenestrations in a desired three-dimensional nitinol structure;

depositing a lift-off layer on the grooved semiconductor substrate surface;

depositing a first NiTi layer over the lift-off layer;

depositing a sacrificial layer through a shadow mask to partially cover the first NiTi layer, the sacrificial layer corresponding to a lumen in the desired three-dimensional nitinol structure;

sputter depositing an aluminum bonding layer onto the first NiTi layer through a reverse mask prior to deposition of a second NiTi layer, the reverse mask being approximately a reverse image of the shadow mask; and

depositing the second NiTi layer over the sacrificial layer and the aluminum bonding layer.

2. The method of claim 1 , further comprising:

removing the lift-off layer and the sacrificial layer so that the first and second NiTi layers are separated from the semiconductor substrate and so that the lumen is formed in the resulting three-dimensional nitinol structure.

3. The method of claim 1 , wherein depositing the lift-off layer comprises depositing a copper or chromium lift-off layer.

4. The method of claim 1 , wherein depositing the sacrificial layer comprises depositing a chromium sacrificial layer.

5. The method of claim 1 , further comprising heating the aluminum bonding layer so that the aluminum bonding layer bonds the first NiTi layer to the second NiTi layer.

6. The method of claim 2 , further comprising inserting a mandrel into the lumen of the three-dimensional nitinol structure, and heating the three-dimensional nitinol structure while it is on the mandrel to crystallize the first and second nitinol layers.

7. The method of claim 6 , wherein the three-dimensional nitinol structure is a flow diverter stent cover, the method further comprising covering a flow diverter stent with the flow diverter stent cover.

Assignments (3)
SECURITY INTEREST Recorded Nov 22, 2023
From: MONARCH BIOSCIENCES, INC.
To: CHECKMATE CAPITAL, LLC
Reel/Frame 065646/0834 →
CHANGE OF NAME Recorded Mar 27, 2019
From: NSVASCULAR, INC.
To: MONARCH BIOSCIENCES, INC.
Reel/Frame 048712/0042 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2019
From: JOHNSON, ALFRED DAVID; KEALEY, COLIN
To: NSVASCULAR, INC.
Reel/Frame 048578/0955 →
Continuity (5)
Division 15136809 · Apr 22, 2016
Continuation PCTUS2014061836 · Oct 22, 2014
Provisional Application 61896541 · Oct 28, 2013
Provisional Application 61894826 · Oct 23, 2013
Related Publication 20190201220A1 · Jul 4, 2019