IP Library › Granted Patent US 10,879,163
Granted Patent B2
US 10,879,163 · App. 16/299,307 · Granted Dec 29, 2020

Fan-out semiconductor package having redistribution line structure

Inventors: Jong-Youn Kim (Seoul, KR); Seok-Hyun Lee (Hwaseong-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L23/49838H01L21/4857H01L21/561H01L23/3128H01L23/49822H01L23/5386H01L25/0655
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Quick Facts
Patent No.
US 10,879,163
App. No.
16/299,307
Granted
Dec 29, 2020
Kind
B2
Abstract

A fan-out semiconductor package including a redistribution line structure is provided. The fan-out semiconductor package includes a plurality of redistribution line insulating layers and a plurality of redistribution line patterns arranged on at least one of an upper surface and a lower surface of each of the plurality of redistribution line insulating layers; at least one semiconductor chip arranged on the redistribution line structure and occupying a footprint having a horizontal width that is less than a horizontal width of the redistribution line structure; and a molding member surrounding the at least one semiconductor chip on the redistribution line structure and having a horizontal width that is greater than the horizontal width of the redistribution line structure, wherein the plurality of redistribution line insulating layers have a cascade structure.

Claims (35)

1. A fan-out semiconductor package comprising:

a redistribution line structure comprising a plurality of redistribution line insulating layers and a plurality of redistribution line patterns on at least one of an upper surface and a lower surface of each of the plurality of redistribution line insulating layers;

at least one semiconductor chip on the redistribution line structure and occupying a footprint having a horizontal width that is less than a horizontal width of the redistribution line structure; and

a molding member surrounding the at least one semiconductor chip on the redistribution line structure and having a horizontal width that is greater than the horizontal width of the redistribution line structure,

wherein the plurality of redistribution line insulating layers have a cascade structure, and

wherein side surfaces of each of the plurality of redistribution line insulating layers are inclined surfaces each having an acute angle from a normal line with respect to a lower surface of each of the plurality of redistribution line insulating layers.

2. The fan-out semiconductor package of claim 1 , wherein a horizontal width of a redistribution line insulating layer from among the plurality of redistribution line insulating layers, farther from the at least one semiconductor chip, is greater than a horizontal width of the redistribution line insulating layer from among the plurality of redistribution line insulating layers, closer to the at least one semiconductor chip.

3. The fan-out semiconductor package of claim 2 , wherein the molding member covers side surfaces of each of the plurality of redistribution line insulating layers.

4. The fan-out semiconductor package of claim 3 , wherein a lower surface of the redistribution line insulating layer, farthest from the at least one semiconductor chip from among the plurality of redistribution line insulating layers, is coplanar with a lower surface of the molding member.

5. The fan-out semiconductor package of claim 1 , wherein the horizontal width of the redistribution line insulating layer farther from the at least one semiconductor chip, is less than the horizontal width of the redistribution line insulating layer closer to the at least one semiconductor chip.

6. The fan-out semiconductor package of claim 5 , wherein an upper surface of the redistribution line insulating layer, closest to the at least one semiconductor chip, is coplanar with a lower surface of the molding member.

7. The fan-out semiconductor package of claim 1 , wherein a thickness of at least one of the plurality of redistribution line insulating layers is less than thicknesses of the others of the plurality of redistribution line insulating layers.

8. The fan-out semiconductor package of claim 7 , wherein a thickness of the redistribution line insulating layer, closest to the at least one semiconductor chip, is less than thicknesses of the others of the plurality of redistribution line insulating layers.

9. The fan-out semiconductor package of claim 7 , wherein a thickness of the redistribution line insulating layer, farthest from the at least one semiconductor chip, is less than thicknesses of the others of the plurality of redistribution line insulating layers.

10. The fan-out semiconductor package of claim 1 , wherein at least one of the plurality of redistribution line patterns protrudes, in a horizontal direction, farther outside of a footprint of the at least one semiconductor chip.

11. A fan-out semiconductor package comprising:

a redistribution line structure comprising a plurality of redistribution line insulating layers having a cascade structure, and a plurality of redistribution line patterns on at least one of an upper surface and a lower surface of each of the plurality of redistribution line insulating layers;

at least one semiconductor chip on the redistribution line structure and electrically connected to the plurality of redistribution line patterns; and

a molding member surrounding the at least one semiconductor chip on the redistribution line structure,

wherein a horizontal width of a redistribution line insulating layer from among the plurality of redistribution line insulating layers, farther from the at least one semiconductor chip, is greater than a horizontal width of the redistribution line insulating layer closer to the at least one semiconductor chip.

12. The fan-out semiconductor package of claim 11 , wherein the molding member protrudes farther than the redistribution structure in a horizontal direction.

13. The fan-out semiconductor package of claim 12 , wherein the molding member has a horizontal width, greater than a horizontal width of a footprint occupied by the at least one semiconductor chip and a horizontal width of the redistribution line structure, and

the molding member covers a portion of an upper surface and side surfaces of each of the plurality of redistribution line insulating layers.

14. The fan-out semiconductor package of claim 11 , wherein side surfaces of each of the plurality of redistribution line insulating layers are inclined surfaces each having an acute angle from a normal line with respect to a lower surface of each of the plurality of redistribution line insulating layers.

15. The fan-out semiconductor package of claim 14 , wherein an acute angle of a side surface of the redistribution line insulating layer, farthest from the at least one semiconductor chip, is less than acute angles of side surfaces of the other of the plurality of redistribution line insulating layers.

16. The fan-out semiconductor package of claim 14 , wherein the plurality of redistribution line insulating layers increase in horizontal width away from the at least one semiconductor chip.

17. A fan-out semiconductor package comprising:

a redistribution line structure comprising a plurality of redistribution line insulating layers having a cascade structure, a plurality of redistribution line patterns on an upper surface of at least one of the plurality of redistribution line insulating layers, and a plurality of redistribution line via patterns connected to the plurality of redistribution line patterns and penetrating at least one of the plurality of redistribution line insulating layers;

at least one semiconductor chip on the redistribution line structure and electrically connected to the plurality of redistribution line patterns and the plurality of redistribution line via patterns; and

a molding member surrounding the at least one semiconductor chip on the redistribution line structure, and protruding farther outside the redistribution line structure in a horizontal direction,

wherein side surfaces of each of the plurality of redistribution line insulating layers are inclined surfaces each having an acute angle from a normal line with respect to a lower surface of each of the plurality of redistribution line insulating layers, and

an acute angle of a side surface of one of the plurality of redistribution line insulating layers is less than acute angles of side surfaces of the other of the plurality of redistribution line insulating layers.

18. The fan-out semiconductor package of claim 17 , wherein a thickness of a redistribution line insulating layer having a greatest horizontal width from among the plurality of redistribution line insulating layers, is less than thicknesses of the other redistribution line insulating layers.

19. The fan-out semiconductor package of claim 18 , wherein an acute angle of a side surface of the redistribution line insulating layer having a greatest horizontal width from among the plurality of redistribution line insulating layers, is less than acute angles of side surfaces of the other redistribution line insulating layers.

20. The fan-out semiconductor package of claim 18 , wherein the redistribution line insulating layer having the greatest horizontal width from among the plurality of redistribution line insulating layers, is closest to the at least one semiconductor chip than the other redistribution line insulating layers.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2019
From: KIM, JONG-YOUN; LEE, SEOK-HYUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 048587/0971 →
Priority Claims (1)
KR 10-2018-0089507 · Jul 31, 2018 · national
Continuity (1)
Related Publication 20200043840A1 · Feb 6, 2020