Bulk ruthenium chemical mechanical polishing composition
The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.
1. A ruthenium polishing composition, comprising:
ammonia, present in an amount of about 0.03 wt % to about 0.05 wt %, based on the total weight of the composition;
an oxygenated halogen compound, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition, wherein the oxygenated halogen compound comprises a halogen selected from the group consisting of iodine, bromine, chlorine, and any combinations thereof;
an abrasive;
water;
optionally, an acid; and
less than about 1 wt % of any additional components,
wherein the pH of the polishing composition is between about 6 and about 8,
wherein the composition excludes tetra methyl ammonium hydroxide, and
wherein, at a downforce of 1.5 psi and a flow rate of 175 mL/min, the composition polishes CVD ruthenium and tetraethyl ortho silicate (TEOS) at a selectivity ratio of ruthenium to TEOS that is 15.82 or greater.
2. The composition of claim 1 , wherein the oxygenated halogen compound is hydrogen periodate.
3. The composition of claim 1 , wherein the abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, and any combinations thereof.
4. The composition of claim 1 , wherein the abrasive is silica.
5. The composition of claim 1 , wherein the abrasive is present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the composition.
6. The composition of claim 1 , wherein the abrasive is present in an amount of about 0.01 wt % to about 6 wt %, based on the total weight of the composition.
7. The composition of claim 1 , wherein the acid is selected from the group consisting of a carboxylic acid, an organic sulfonic acid, an organic phosphonic acid, or any combinations thereof.
8. The composition of claim 1 , wherein the acid is selected from the group consisting of 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, P-toluenesulfonic acid, and trifluoromethane-sulfonic acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, and any combinations thereof.
9. The composition of claim 1 , wherein the acid is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
10. The composition of claim 1 , wherein the acid is present in an amount of about 0.01 wt % to about 1 wt %, based on the total weight of the composition.
11. The composition of claim 1 , wherein the composition is substantially free of azoles.
12. The composition of claim 1 , wherein the composition consists of the ammonia, the oxygenated halogen compound, the abrasive, the water, and optionally the acid.
13. The polishing composition of claim 1 ,
wherein the abrasive is silica, present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the composition, and
wherein the acid is an organic sulfonic add present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
14. A method of removing ruthenium material from a substrate, comprising the step of applying the composition of claim 1 to the substrate while polishing the substrate with a rotating polishing pad.
15. A ruthenium polishing composition, comprising:
a ruthenium surface passivation layer softener comprising ammonia in an amount of about 0.03 wt % to about 0.05 wt %;
a removal rate enhancer;
an abrasive;
a ruthenium oxidizer comprising hydrogen periodate;
water; and
less than about 1 wt % of any additional components,
wherein the pH of the composition is between about 6 and 8.
16. A ruthenium polishing composition, comprising:
ammonia, present in an amount of about 0.03 wt % to about 0.05 wt %;
hydrogen periodate, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition;
an abrasive;
an acid;
water; and
less than about 1 wt % of any additional components,
wherein the pH of the polishing composition is between about 7 and about 8.
17. The composition of claim 16 , wherein the acid is selected from the group consisting of a carboxylic acid, an organic sulfonic acid, an organic phosphonic acid, or any combinations thereof.
18. The composition of claim 16 , wherein the acid is selected from the group consisting of 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethanesulfonic acid, benzenesulfonic acid, hydroxylamine O-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, P-toluenesulfonic acid, and trifluoromethane-sulfonic acid, poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid, phenylphosphonic acid, and any combinations thereof.
19. The composition of claim 16 , wherein the acid is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
20. The composition of claim 16 , wherein the acid is present in an amount of about 0.01 wt % to about 1 wt %, based on the total weight of the composition.