Oxide semiconductor thin film transistor having spaced channel and barrier strips and manufacturing method thereof
View Patent ↗The invention provides an oxide semiconductor TFT and manufacturing method thereof. The oxide semiconductor TFT comprises: a substrate, a gate on the substrate, a gate insulating layer on the gate and substrate, an oxide semiconductor layer on the gate insulating layer, and a barrier layer on the semiconductor layer, and a source and a drain on the oxide semiconductor layer and gate insulating layer; the oxide semiconductor layer comprising: a channel region and two contact regions respectively located at two sides of the channel region, and the barrier layer being located on the channel region; the channel region comprising a plurality of channel strips spaced apart in a channel width direction, and the barrier layer comprising a plurality of barrier strips respectively corresponding to the plurality of channel strips. The invention can reduce power consumption of the oxide semiconductor TFT and improve and the stability in the winding state.
1. An oxide semiconductor thin film transistor (TFT), comprising: a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate and the substrate, an oxide semiconductor layer disposed on the gate insulating layer, and a barrier layer disposed on the semiconductor layer, and a source and a drain disposed on the oxide semiconductor layer and the gate insulating layer;
the oxide semiconductor layer comprising: a channel region and two contact regions respectively located at two sides of the channel region, wherein the source and the drain respectively in contact with the two contact regions, and the barrier layer being located on the channel region;
the channel region comprising a plurality of channel strips spaced apart in a channel width direction, and the barrier layer comprising a plurality of barrier strips respectively corresponding to the plurality of channel strips;
wherein the interface between the channel region and the barrier layer comprises fluoride ions that occupy oxygen vacancies in the channel region.
2. The oxide semiconductor TFT as claimed in claim 1 , wherein the substrate is a flexible substrate.
3. The oxide semiconductor TFT as claimed in claim 1 , wherein the material of the oxide semiconductor layer is IGZO.
4. The oxide semiconductor TFT as claimed in claim 1 , wherein the material of the barrier layer is silicon oxide.
5. A manufacturing method of oxide semiconductor thin film transistor (TFT), comprising:
Step S 1 : providing a base substrate, forming a substrate on the base substrate;
Step S 2 : forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate;
Step S 3 : forming an oxide semiconductor film on the gate insulating layer, and forming a barrier film on the oxide semiconductor film;
Step S 4 : patterning the oxide semiconductor film and the barrier film to obtain an oxide semiconductor layer and a barrier layer; the oxide semiconductor layer comprising: a channel region and two contact regions respectively located at two sides of the channel region, the barrier layer being located on the channel region; the channel region comprising a plurality of channel strips spaced apart in a channel width direction, and the barrier layer comprising a plurality of barrier strips respectively corresponding to the plurality of channel strips;
Step S 5 : forming a source and a drain on the oxide semiconductor layer and the gate insulating layer, wherein the source and the drain being in contact with the two contact regions, respectively;
wherein in step S 4 of patterning the oxide semiconductor film and the barrier film, a fluorine-containing gas is used to etch the barrier film.
6. The manufacturing method of oxide semiconductor TFT as claimed in claim 5 , wherein the manufacturing method further comprises a step S 6 of baking the barrier layer.
7. The manufacturing method of oxide semiconductor TFT as claimed in claim 5 , wherein the substrate is a flexible substrate.
8. The manufacturing method of oxide semiconductor TFT as claimed in claim 5 , wherein the material of the channel region is IGZO, and the material of the barrier layer is silicon oxide.