IP Library Granted Patent US 10,727,386
Granted Patent B2
US 10,727,386 · App. 16/300,661 · Granted Jul 28, 2020

Radiation-emitting component

Inventor: Stefan Grötsch (Bad Abbach, DE)
Assignee: OSRAM OLED GmbH
H01L33/62G02B6/4214H01L25/0753H01L33/505H01L33/507H01L33/56H01L33/60H01L33/644H01L27/153H01L27/156H01L33/46H01L33/54H01L2224/48091H01L2924/181
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Quick Facts
Patent No.
US 10,727,386
App. No.
16/300,661
Granted
Jul 28, 2020
Kind
B2
Abstract

A radiation-emitting component includes a radiation source including at least one semiconductor layer sequence that generates radiation; an optical waveguide device disposed downstream of the radiation source; and a conversion element for radiation conversion disposed downstream of the optical waveguide device, wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device, radiation is couplable from the optical waveguide device into the conversion element via an input surface, and the emission surface of the radiation source is larger than the input surface of the conversion element.

Claims (102)

1. A radiation-emitting component comprising:

a radiation source comprising at least one semiconductor layer sequence that generates radiation;

an optical waveguide device disposed downstream of the radiation source;

a conversion element for radiation conversion disposed downstream of the optical waveguide device; and

a reflective material arranged circumferentially with respect to the conversion element,

wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device,

radiation is couplable from the optical waveguide device into the conversion element via an input surface, and

the emission surface of the radiation source is larger than the input surface of the conversion element.

2. The radiation-emitting component according to claim 1 , wherein the input surface of the conversion element and the emission surface of the radiation source comprise a size ratio of at most 75%.

3. The radiation-emitting component according to claim 1 ,

wherein the radiation source comprises a plurality of semiconductor layer sequences that generate radiation arranged next to one another,

radiation of the semiconductor layer sequences is each emittable via a radiation surface and couplable into the optical waveguide device, and

the emission surface of the radiation source is composed of the radiation surfaces of the semiconductor layer sequences.

4. The radiation-emitting component according to claim 1 ,

wherein the radiation-emitting component comprises a radiation-emitting semiconductor chip,

the semiconductor chip is configured as a volume-emitting flip-chip,

the semiconductor chip comprises the at least one semiconductor layer sequence of the radiation source and a radiation-transmissive chip substrate, and

the optical waveguide device is constituted of the radiation-transmissive chip substrate.

5. The radiation-emitting component according to claim 4 , wherein the reflective material is arranged circumferentially with respect to the semiconductor chip and at a front side of the semiconductor chips in a region next to the conversion element.

6. The radiation-emitting component according to claim 1 ,

wherein the radiation-emitting component comprises a plurality of radiation-emitting semiconductor chips arranged next to one another,

the plurality of semiconductor chips are configured as volume-emitting flip-chips,

the plurality of semiconductor chips each comprise a semiconductor layer sequence of the radiation source and a radiation-transmissive chip substrate, and

the optical waveguide device comprises the radiation-transmissive chip substrates of the plurality of semiconductor chips.

7. The radiation-emitting component according to claim 6 , further comprising a radiation-transmissive material arranged between the plurality of semiconductor chips.

8. The radiation-emitting component according to claim 6 , wherein the reflective material is arranged circumferentially with respect to the plurality of semiconductor chips and at front sides of the plurality of semiconductor chips in a region next to the conversion element.

9. The radiation-emitting component according to claim 1 ,

wherein the radiation-emitting component comprises a plurality of radiation-emitting semiconductor chips arranged next to one another,

the plurality of semiconductor chips are configured as surface-emitting semiconductor chips,

the plurality of semiconductor chips each comprise a semiconductor layer sequence of the radiation source, and

the optical waveguide device is configured in the form of an optical waveguide arranged on the plurality of semiconductor chips.

10. The radiation-emitting component according to claim 9 , wherein at least one of the following is present:

the reflective material is arranged at a front side of the optical waveguide in a region next to the conversion element, and the optical waveguide comprises a shape tapering in the direction of the conversion element.

11. The radiation-emitting component according to claim 9 , further comprising at least one heat dissipating element thermally coupled to the optical waveguide to dissipate heat from the optical waveguide.

12. The radiation-emitting component according to claim 9 , further comprising a heat dissipating element thermally coupled to the optical waveguide to dissipate heat from the optical waveguide,

wherein the optical waveguide is arranged on the heat dissipating element, and

a reflective layer is provided between the optical waveguide and the heat dissipating element in order to avoid absorption of radiation at the heat dissipating element.

13. The radiation-emitting component according to claim 12 , wherein at least one of the following is present:

the reflective layer comprises a plurality of mirror layers; and

the heat dissipating element is formed from a metallic material.

14. The radiation-emitting component according to claim 1 ,

wherein the radiation-emitting component comprises a radiation-emitting semiconductor chip,

the semiconductor chip is configured as a surface-emitting semiconductor chip,

the semiconductor chip comprises the semiconductor layer sequence of the radiation source, and

the optical waveguide device is configured in the form of an optical waveguide arranged on the semiconductor chip.

15. The radiation-emitting component according to claim 14 , further comprising at least one heat dissipating element thermally coupled to the optical waveguide to dissipate heat from the optical waveguide.

16. The radiation-emitting component according to claim 14 , further comprising a heat dissipating element thermally coupled to the optical waveguide to dissipate heat from the optical waveguide,

wherein the optical waveguide is arranged on the heat dissipating element, and

a reflective layer is provided between the optical waveguide and the heat dissipating element to avoid absorption of radiation at the heat dissipating element.

17. The radiation-emitting component according to claim 16 , wherein at least one of the following is present:

the reflective layer comprises a plurality of mirror layers; and

the heat dissipating element is formed from a metallic material.

18. The radiation-emitting component according to claim 1 , comprising a plastics material comprising reflective particles that surround the arrangement comprising the radiation source, the optical waveguide device and the conversion element, wherein a front-side radiation surface of the conversion element is not covered with the plastics material.

19. A radiation-emitting component comprising:

a radiation source comprising at least one semiconductor layer sequence that generates radiation;

an optical waveguide device disposed downstream of the radiation source; and

a conversion element for radiation conversion disposed downstream of the optical waveguide device,

wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device,

radiation is couplable from the optical waveguide device into the conversion element via an input surface,

the emission surface of the radiation source is larger than the input surface of the conversion element,

the radiation source comprises a plurality of semiconductor layer sequences that generate radiation arranged next to one another,

radiation of the semiconductor layer sequences is each emittable via a radiation surface and couplable into the optical waveguide device, and

the emission surface of the radiation source is composed of the radiation surfaces of the semiconductor layer sequences.

20. A radiation-emitting component comprising:

a radiation source comprising at least one semiconductor layer sequence that generates radiation;

an optical waveguide device disposed downstream of the radiation source; and

a conversion element for radiation conversion disposed downstream of the optical waveguide device,

wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device,

radiation is couplable from the optical waveguide device into the conversion element via an input surface,

the emission surface of the radiation source is larger than the input surface of the conversion element,

the radiation-emitting component comprises a radiation-emitting semiconductor chip,

the semiconductor chip is configured as a volume-emitting flip-chip,

the semiconductor chip comprises the at least one semiconductor layer sequence of the radiation source and a radiation-transmissive chip substrate, and

the optical waveguide device is constituted of the radiation-transmissive chip substrate.

21. A radiation-emitting component comprising:

a radiation source comprising at least one semiconductor layer sequence that generates radiation;

an optical waveguide device disposed downstream of the radiation source; and

a conversion element for radiation conversion disposed downstream of the optical waveguide device,

wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device,

radiation is couplable from the optical waveguide device into the conversion element via an input surface,

the emission surface of the radiation source is larger than the input surface of the conversion element,

the radiation-emitting component comprises a plurality of radiation-emitting semiconductor chips arranged next to one another,

the plurality of semiconductor chips are configured as surface-emitting semiconductor chips,

the plurality of semiconductor chips each comprise a semiconductor layer sequence of the radiation source,

the optical waveguide device is configured in the form of an optical waveguide arranged on the plurality of semiconductor chips,

the radiation-emitting component further comprises a heat dissipating element thermally coupled to the optical waveguide to dissipate heat from the optical waveguide,

the optical waveguide is arranged on the heat dissipating element, and

a reflective layer is provided between the optical waveguide and the heat dissipating element in order to avoid absorption of radiation at the heat dissipating element.

22. A radiation-emitting component comprising:

a radiation source comprising at least one semiconductor layer sequence that generates radiation;

an optical waveguide device disposed downstream of the radiation source; and

a conversion element for radiation conversion disposed downstream of the optical waveguide device,

wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device,

radiation is couplable from the optical waveguide device into the conversion element via an input surface,

the emission surface of the radiation source is larger than the input surface of the conversion element,

the radiation-emitting component comprises a radiation-emitting semiconductor chip,

the semiconductor chip is configured as a surface-emitting semiconductor chip,

the semiconductor chip comprises the semiconductor layer sequence of the radiation source,

the optical waveguide device is configured in the form of an optical waveguide arranged on the semiconductor chip,

the radiation-emitting component further comprises a heat dissipating element thermally coupled to the optical waveguide to dissipate heat from the optical waveguide,

the optical waveguide is arranged on the heat dissipating element, and

a reflective layer is provided between the optical waveguide and the heat dissipating element to avoid absorption of radiation at the heat dissipating element.

Assignments (3)
MERGER Recorded Feb 17, 2026
From: OSRAM OLED GMBH
To: AMS-OSRAM INTERNATIONAL GMBH
Reel/Frame 074881/0104 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051464/0504 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 2, 2019
From: GROETSCH, STEFAN
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 047880/0273 →
Priority Claims (1)
DE 10 2016 109 308 · May 20, 2016 · national
Continuity (1)
Related Publication 20190207071A1 · Jul 4, 2019
Cited By (1)
US 12,317,654